BYX82...BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Test Conditions tp=10ms, half sinewave Repetitive peak forward current Average forward current Tamb 45°C i2*t–rating Junction and storage temperature range x Type BYX82 BYX83 BYX84 BYX85 BYX86 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM Value 200 400 600 800 1000 50 Unit V V V V V A IFRM IFAV i2*t Tj=Tstg 10 2 8 –65...+175 A A A2*s °C Value 45 100 Unit K/W K/W Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Document Number 86052 Rev. 2, 24-Jun-98 Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA www.vishay.de • FaxBack +1-408-970-5600 1 (5) BYX82...BYX86 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=100°C VR=4V, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=IR=1A, di/dt=5A/ms Diode capacitance Reverse recovery time Reverse recovery charge Type Symbol VF IR IR CD trr Qrr Min Typ 0.9 0.1 10 20 2 3 Max 1.0 1 25 4 6 Unit V mA mA pF ms mC 10 120 l l 100 IF – Forward Current ( A ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 80 TL=constant 60 40 Tj = 25°C 0.1 20 Scattering Limits 0 0.01 0 5 10 15 20 25 30 l – Lead Length ( mm ) 94 9572 0 240 VR RM 160 VR 120 BYX 82 BYX 84 BYX 83 40 BYX 85 BYX 86 0 0 94 9579 400 2.4 3.0 Figure 3. Forward Current vs. Forward Voltage CD – Diode Capacitance ( pF ) RthJA 100K/W 80 1.8 30 v v 1.2 RthJA 35K/W RthJA 57K/W v 200 0.6 VF – Forward Voltage ( V ) 94 9573 Figure 1. Max. Thermal Resistance vs. Lead Length T j – Junction Temperature (° C ) Tj =175°C 1 800 1200 18 12 6 f = 470kHz Tj = 25°C 0 1600 Reverse / Repetitive Peak Reverse Voltage ( V ) Figure 2. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage www.vishay.de • FaxBack +1-408-970-5600 2 (5) 24 0.1 94 9574 1 10 100 VR – Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Document Number 86052 Rev. 2, 24-Jun-98 BYX82...BYX86 Z thp – Thermal Resistance for Pulse Cond. (K/W) Vishay Telefunken 1000 v v VRRM 200V RthJA 100K/W 100 tp/T=0.5 10 tp/T=0.2 tp/T=0.1 tp/T=0.05 Tamb= 25°C Tamb= 100°C Tamb= 45°C Tamb= 125°C 0.02 Tamb= 70°C Tamb= 150°C 0.01 Single Pulse 1 10–3 10–2 10–1 100 101 100 tp – Pulse Length ( s ) 94 9575 101 IFRM – Repetitive Peak Forward Current ( A ) 102 Z thp – Thermal Resistance for Pulse Cond. (K/W) Figure 5. Thermal Response 1000 v v v VRRM 1000V t 10ms RthJA 100K/W 100 tp/T=0.5 10 Tamb= 25°C Tamb= 45°C Tamb= 60°C tp/T=0.2 tp/T=0.1 tp/T=0.05 Tamb= 70°C 0.02 Tamb= 100°C 0.01 1 10–3 Single Pulse 10–2 94 9578 10–1 100 101 tp – Pulse Length ( s ) 10–1 100 IFRM – Repetitive Peak Forward Current ( A ) 101 Figure 6. Thermal Response Document Number 86052 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (5) BYX82...BYX86 Z thp – Thermal Resistance for Pulse Cond. (K/W) Vishay Telefunken 1000 v v VRRM 200V RthJA 57K/W 100 Tamb= 25°C tp/T=0.5 10 tp/T=0.2 tp/T=0.1 tp/T=0.05 Tamb= 70°C Tamb= 100°C Tamb= 125°C Tamb= 150°C tp/T=0.02 1 10–4 tp/T=0.01 Tamb= 45°C Single Pulse 10–3 10–2 10–1 100 100 tp – Pulse Length ( s ) 94 9577 101 IFRM – Repetitive Peak Forward Current ( A ) Z thp – Thermal Resistance for Pulse Cond. (K/W) Figure 7. Thermal Response 1000 v v v VRRM 1000V t 10ms RthJA 57K/W 100 tp/T=0.5 10 Tamb= 25°C tp/T=0.2 tp/T=0.1 tp/T=0.05 100°C Tamb= 45°C 70°C tp/T=0.02 1 10–4 Single Pulse tp/T=0.01 10–3 10–2 Tamb= 125°C 10–1 100 100 tp – Pulse Length ( s ) 94 9576 101 IFRM – Repetitive Peak Forward Current ( A ) Figure 8. Thermal Response Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification 26 min. www.vishay.de • FaxBack +1-408-970-5600 4 (5) 4.2 max. 94 9538 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. Document Number 86052 Rev. 2, 24-Jun-98 BYX82...BYX86 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86052 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 5 (5)