VISHAY BAV301

BAV300...BAV303
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
96 12315
Applications
General purposes
Absolute Maximum Ratings
Tj = 25_C
Parameter
Peak reverse voltage
g
Test Conditions
Reverse voltage
g
Forward current
Peak forward surge current
Forward peak current
Junction temperature
Storage temperature range
Type
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
tp=1s, Tj=25°C
f=50Hz
Symbol
VRRM
VRRM
VRRM
VRRM
VR
VR
VR
VR
IF
IFSM
IFM
Tj
Tstg
Value
60
120
200
250
50
100
150
200
250
1
625
175
–65...+175
Unit
V
V
V
V
V
V
V
V
mA
A
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1
Symbol
RthJA
Value
500
Unit
K/W
l d 0.9
0 9 mm2 copper area per
35mm copper clad,
electrode
Document Number 85545
Rev. 3, 01-Apr-99
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BAV300...BAV303
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Test Conditions
IF=100mA
VR=50V
VR=100V
VR=150V
VR=200V
Tj=100°C, VR= 50V
Tj=100°C, VR= 100V
Tj=100°C, VR= 150V
Tj=100°C, VR= 200V
IR=100mA, tp/T=0.01,
tp=0.3ms
Breakdown voltage
g
Type
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
BAV300
BAV301
BAV302
BAV303
Diode capacitance
VR=0, f=1MHz
Differential forward resistance IF=10mA
Reverse recovery time
IF=IR=30mA, iR=3mA,
RL=100W
Symbol
VF
IR
IR
IR
IR
IR
IR
IR
IR
V(BR)
V(BR)
V(BR)
V(BR)
CD
rf
trr
Min
Typ
Max
1
100
100
100
100
15
15
15
15
60
120
200
250
1.5
5
Unit
V
nA
nA
nA
nA
mA
mA
mA
mA
V
V
V
V
pF
W
50
ns
Characteristics (Tj = 25_C unless otherwise specified)
1000
IF – Forward Current ( mA )
I R – Reverse Current ( mA )
1000
100
Scattering Limit
10
1
VR = VRRM
0.1
Tj = 25°C
100
Scattering Limit
10
1
0.01
0.1
0
94 9084
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 1. Reverse Current vs. Junction Temperature
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0
94 9085
0.4
0.8
1.2
1.6
2.0
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Document Number 85545
Rev. 3, 01-Apr-99
BAV300...BAV303
rf – Differential Forward Resistance (W )
Vishay Telefunken
1000
100
Tj = 25°C
10
1
0.1
1
10
100
IF – Forward Current ( mA )
94 9089
Figure 3. Differential Forward Resistance vs.
Forward Current
0.71
1.3
Reflow Soldering
1.27
95 10330
1.2
0.152
9.9
0.6
0.355
25
1.2
0.6
2.4
Figure 5. Recommended foot pads (in mm)
10
Wave Soldering
95 10331
2.5
1.4
95 10329
24
0.7
1.4
0.7
2.8
Figure 4. Board for RthJA definition (in mm)
Document Number 85545
Rev. 3, 01-Apr-99
Figure 6. Recommended foot pads (in mm)
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3 (5)
BAV300...BAV303
Vishay Telefunken
Dimensions in mm
96 12072
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Document Number 85545
Rev. 3, 01-Apr-99
BAV300...BAV303
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85545
Rev. 3, 01-Apr-99
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