BYT08P/600A/800A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage 14282 Very good reverse current stability at high temperature D Low thermal resistance Applications Fast rectifiers in S.M.P.S Freewheeling diodes and snubber diodes in motor control circuits Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Test Conditions Type BYT08P/600A BYT08P/800A tp=10ms, half sinewave Repetitive peak forward current Average forward current Junction and storage temperature range Symbol VR=VRRM VR=VRRM IFSM Value 600 800 50 Unit V V A IFRM IFAV Tj=Tstg 16 8 –40...+150 A A °C Maximum Thermal Resistance Tj = 25_C Parameter Junction case Junction ambient Document Number 86017 Rev. 3, 24-Jun-98 Test Conditions Symbol RthJC RthJA Value 2.0 85 Unit K/W K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) BYT08P/600A/800A Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Forward recovery time Turn on transient peak voltage Reverse recovery y characteristics Reverse recovery time Test Conditions IF=8A IF=8A, Tj=100°C VR=VRRM VR=VRRM, Tj=100°C IF=8A; diF/dt 50A/ms Type Symbol Min VF VF IR IR tfr VFP IRM tIRM trr x I =8A,, di /dtx–32A/ms,, V =200V, T =100°C I =8A, di /dtx–32A/ms, F Batt F F F j VBatt=200V, Tj=100°C, iR=0.25xIRM IF=0.5A, IR=1A, iR=0.25A IF=1A, diF/dt –50A/ms, VBatt=200V IF=1A, diF/dt –50A/ms, VBatt=200V, iR=0.25xIRM x x Reverse recovery current Reverse recovery time Typ Max 1.9 1.8 35 2 350 4,5 4 160 100 50 Unit V V mA mA ns V A ns ns trr IRM 1.7 ns A trr 75 ns Characteristics (Tj = 25_C unless otherwise specified) 10 I FAV– Average Forward Current ( A ) I R – Reverse Current ( mA ) 1000 100 10 VR=VRRM 1 8 6 94 9357 10K/W 4 20K/W 2 0.1 85K/W 0 0 40 80 120 160 200 Tj – Junction Temperature ( °C ) Figure 1. Typ. Reverse Current vs. Junction Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) RthJC=2K/W RthJA=8K/W 0 94 9355 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Document Number 86017 Rev. 3, 24-Jun-98 BYT08P/600A/800A Vishay Telefunken 250 t rr – Reverse Recovery Time ( ns ) IF – Forward Current ( A ) 100 10 1 0.1 200 IF = 8A TC=100°C 150 100 50 0.01 0 0 0.6 1.2 1.8 2.4 3.0 VF – Forward Voltage ( V ) 94 9356 0 94 9360 Q rr – Reverse Recovery Charge ( nC ) t IRM – Reverse Recovery Time for IRM ( ns ) 120 IF = 8A TC=100°C 80 40 150 200 250 300 350 1200 IF = 8A TC=100°C 1000 800 600 400 200 0 0 0 94 9358 100 Figure 6. Reverse Recovery Time vs. Forward Current Rate of Change Figure 3. Typ. Forward Current vs. Forward Voltage 160 50 –dIF/dt – Forward Current Rate of Change ( A/ms ) 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 4. Reverse Recovery Time for IRM vs. Forward Current Rate of Change 0 94 9361 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 7. Reverse Recovery Charge vs. Forward Current Rate of Change IRM – Reverse Recovery Current ( A ) 20 15 IF = 8A TC=100°C 10 5 0 0 94 9359 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 5. Reverse Recovery Current vs. Forward Current Rate of Change Document Number 86017 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (5) BYT08P/600A/800A Vishay Telefunken Dimensions in mm 14276 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 86017 Rev. 3, 24-Jun-98 BYT08P/600A/800A Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86017 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 5 (5)