VISHAY BYT53D

BYT53.
Vishay Telefunken
Very Fast Silicon Mesa Rectifiers
Features
D
D
D
D
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Applications
Very fast rectifiers and switches
Switched mode power supplies
High–frequency inverter circuits
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Average forward current
Junction and storage temperature range
Type
BYT53A
BYT53B
BYT53C
BYT53D
BYT53F
BYT53G
tp=10ms,
half sinewave
l=10mm, TL=25°C
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
50
100
150
200
300
400
50
Unit
V
V
V
V
V
V
A
IFAV
Tj=Tstg
1.9
–65...+175
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Document Number 86030
Rev. 4, 24-Jun-98
Test Conditions
IF=1A
IF=1A, Tj=175°C
VR=VRRM
VR=VRRM, Tj=150°C
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol
VF
VF
IR
IR
trr
Min
Typ
Max
1.1
0.9
5
200
50
Unit
V
V
mA
mA
ns
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BYT53.
Vishay Telefunken
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Characteristics (Tj = 25_C unless otherwise specified)
120
2.0
I FAV– Average Forward Current ( A )
100
80
60
l
l
40
20
1.6
0
5
10
15
20
25
0.8
0.4
0
60
80 100 120 140 160 180
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
10
BYT53G
45K/W
BYT53F
100K/W
160K/W
IF – Forward Current ( A )
RthJA=
BYT53D
BYT53C
BYT53B
BYT53A
Tj = 175°C
1
Tj = 25°C
0.1
0.01
0.001
50
75
100
125
150
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
175
Tj – Junction Temperature ( °C )
15770
VF – Forward Voltage ( V )
15768
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 5. Max. Forward Current vs. Forward Voltage
30
1000
CD – Diode Capacitance ( pF )
VR = VRRM
I R – Reverse Current ( mA )
40
VR = VRRM
25
100
10
1
Tj=25°C
24
18
12
6
0
25
15771
20
Tamb – Ambient Temperature ( °C )
15769
Figure 1. Max. Thermal Resistance vs. Lead Length
240
220
200
180
160
140
120
100
80
60
40
20
0
RthJA=100K/W
PCB: d=25mm
0
30
l – Lead Length ( mm )
94 9552
RthJA=45K/W
l=10mm
1.2
TL=constant
0
PR – Reverse Power Dissipation ( mW )
VR = VR RM
half sinewave
50
75
100
125
150
Tj – Junction Temperature ( °C )
Figure 3. Max. Reverse Current vs.
Junction Temperature
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175
0.1
94 9456
1
10
100
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86030
Rev. 4, 24-Jun-98
BYT53.
Vishay Telefunken
Dimensions in mm
∅ 3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
26 min.
Document Number 86030
Rev. 4, 24-Jun-98
Cathode Identification
4.2 max.
94 9538
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
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BYT53.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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4 (4)
Document Number 86030
Rev. 4, 24-Jun-98