TK13P25D
MOSFETs
Silicon N-Channel MOS (π-MOS)
TK13P25D
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3)
Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G)
2: Drain (D)
3: Source (S)
DPAK
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
13
Drain current (pulsed)
(Note 1)
IDP
52
PD
96
W
Power dissipation
(Tc = 25)
A
Single-pulse avalanche energy
(Note 2)
EAS
78
mJ
Avalanche current
(Note 3)
IAR
13
A
Reverse drain current (DC)
(Note 1)
IDR
13
Reverse drain current (pulsed)
(Note 1)
IDRP
52
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
/W
Channel-to-case thermal resistance
Rth(ch-c)
1.3
Channel-to-ambient thermal resistance
Rth(ch-a)
125
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 50 V, Tch = 25 (initial), L = 0.77 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 250 V, VGS = 0 V
Min
Typ.
Max
Unit
±1
µA
10
V(BR)DSS
ID = 10 mA, VGS = 0 V
250
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
RDS(ON)
VGS = 10 V, ID = 6.5 A
0.19
0.25
Ω
Min
Typ.
Max
Unit
1100
pF
V
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Input capacitance
Symbol
Ciss
Test Condition
VDS = 100 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
8
Output capacitance
Coss
66
Gate resistance
rg
VDS = OPEN, f = 1 MHz
5
Ω
Switching time (rise time)
tr
See Figure 6.2.1.
40
ns
Switching time (turn-on time)
ton
55
tf
20
toff
130
Switching time (fall time)
Switching time (turn-off time)
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
25
6.3. Gate Charge Characteristics (Ta = 25
Characteristics
Total gate charge (gate-source plus
gate-drain)
Symbol
Qg
Test Condition
VDD ≈ 200 V, VGS = 10 V, ID = 13 A
Min
Typ.
Max
Unit
25
nC
Gate-source charge 1
Qgs1
4.2
Gate-drain charge
Qgd
8.5
unless otherwise specified)
25
6.4. Source-Drain Characteristics (Ta = 25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Diode forward voltage
VDSF
IDR = 13 A, VGS = 0 V
-1.7
V
Reverse recovery time
trr
180
ns
Reverse recovery charge
Qrr
IDR = 13 A, VGS = 0 V
-dIDR/dt = 100 A/µs
1.1
µC
Peak reverse recovery current
Irr
12
A
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
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Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
Fig. 8.12 Dynamic Input/Output Characteristics
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Fig. 8.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TK13P25D
Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
Package Name(s)
TOSHIBA: 2-7K1S
Nickname: DPAK
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TK13P25D
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