TK40A10N1
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TK40A10N1
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(3)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain
3: Source
TO-220SIS
unless otherwise specified)
25
4. Absolute Maximum Ratings (Note) (Ta = 25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit)
(Note 1,2)
ID
90
Drain current (DC)
(Tc = 25)
(Note 1)
ID
40
(t = 1 ms)
(Note 1)
IDP
171
PD
35
W
EAS
74
mJ
IAR
40
A
Drain current (pulsed)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 3)
Avalanche current
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
3.57
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
62.5
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Limited by silicon chip capability.
Note 3: VDD = 80 V, Tch = 25 (initial), L = 35.9 µH, RG = 1.2 Ω, IAR = 40 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 100 V, VGS = 0 V
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 4)
Typ.
Max
Unit
±0.1
µA
10
ID = 10 mA, VGS = -20 V
65
VDS = 10 V, ID = 0.5 mA
2.0
4.0
VGS = 10 V, ID = 20 A
6.8
8.2
ID = 10 mA, VGS = 0 V
V(BR)DSX
Vth
RDS(ON)
Min
100
V(BR)DSS
Gate threshold voltage
Drain-source on-resistance
Test Condition
V
mΩ
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Input capacitance
Symbol
Ciss
Test Condition
VDS = 50 V, VGS = 0 V, f = 1 MHz
Min
Typ.
Max
Unit
3000
pF
Reverse transfer capacitance
Crss
29
Output capacitance
Coss
520
2.8
Ω
14
ns
Gate resistance
rg
Switching time (rise time)
tr
Switching time (turn-on time)
ton
35
tf
21
toff
57
Min
Typ.
Max
Unit
49
nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
25
6.3. Gate Charge Characteristics (Ta = 25
Characteristics
Total gate charge (gate-source plus
gate-drain)
Symbol
Qg
Test Condition
VDD ≈ 80 V, VGS = 10 V, ID = 40 A
Gate-source charge 1
Qgs1
18
Gate-drain charge
Qgd
14
Gate switch charge
QSW
21
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Rev.2.0
TK40A10N1
unless otherwise specified)
6.4. Source-Drain Characteristics (Ta = 25
25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Reverse drain current (DC)
(Note 5)
IDR
40
Reverse drain current (pulsed)
(Note 5)
IDRP
171
-1.2
Diode forward voltage
VDSF
IDR = 40 A, VGS = 0 V
IDR = 40 A, VGS = 0 V
-dIDR/dt = 100 A/µs
67
ns
130
nC
Reverse recovery time
(Note 6)
trr
Reverse recovery charge
(Note 6)
Qrr
V
Note 5: Ensure that the channel temperature does not exceed 150.
Note 6: Ensure that VDS peak does not exceed VDSS.
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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TK40A10N1
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
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TK40A10N1
Fig. 8.12 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.14 EAS - Tch
(Guaranteed Maximum)
Fig. 8.15 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TK40A10N1
Package Dimensions
Unit: mm
Weight: 1.7 g (typ.)
Package Name(s)
JEITA: SC-67
TOSHIBA: 2-10U1S
Nickname: TO-220SIS
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TK40A10N1
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
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noncompliance with applicable laws and regulations.
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