2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 0.4 1 0.4 0.8±0.05 2 3 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.8±0.05 High Collector Current: IC = 400 mA (max) 1.2±0.05 • 1.2±0.05 VESM 0.32±0.05 VCE (sat) (1) = 15 mV (typ.) 0.13±0.05 Low Collector Saturation Voltage: 0.22±0.05 • Unit: mm 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1L1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.5 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) 0.5mm 0.45mm 0.45mm 0.4mm Marking Type Name hFE Classification FA 1 2007-11-01 2SC5376FV Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA 300 ⎯ 1000 hFE DC current gain (Note) VCE = 2 V, IC = 10 mA VCE (sat) (1) IC = 10 mA, IB = 0.5 mA ⎯ 15 30 mV VCE (sat) (2) IC = 200 mA, IB = 10 mA ⎯ 110 250 mV Base-emitter voltage VBE (sat) IC = 200 mA, IB = 10 mA ⎯ 0.87 1.2 V Transition frequency fT VCE = 2 V, IC = 10 mA 80 130 ⎯ MHz Collector-emitter saturation voltage Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 4.2 ⎯ pF Collector-emitter on resistance Ron IB = 1 mA, Vin = 1 Vrms, f = 1 kHz ⎯ 0.9 ⎯ Ω ⎯ 85 ⎯ ns ⎯ 170 ⎯ ns ⎯ 40 ⎯ ns ton Switching time Storage time tstg 10 μs 600 Ω INPUT 300 Ω 0V 60 Ω OUTPUT 50 Ω Turn-on time VCC = 6 V VBB = −3 V Falll time Note: hFE Classification tf Duty Cycle < = 2% IB1 = −IB2 = 5 mA A: 300 ~ 600, B: 500 ~ 1000 2 2007-11-01 2SC5376FV IC – VCE hFE – IC 1.0 10000 Common emitter DC current gain hFE (A) Collector current IC 5 4 0.6 VCE = 2 V 3000 0.8 6 Common emitter 5000 Ta = 25°C 3 2 0.4 1 1000 Ta = 100°C 25 500 300 −25 100 50 0.2 30 IB = 0.5 mA 0 0 1 2 3 4 Collector-emitter voltage 10 0.1 5 0.3 1 VCE (V) 3 30 100 Collector current IC (mA) VCE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (mV) 30 100 50 30 Ta = 100°C −25 25 5 3 0.3 1 3 10 30 100 Collector current IC (mA) 300 Common emitter IC/IB = 20 Ta = 25°C 10 5 3 1 0.5 0.3 0.1 0.1 1000 0.3 1 3 IC – VBE Collector output capacitance Cob (pF) Common emitter VCE = 2V Collector current IC (mA) 300 100 50 30 Ta = 100°C 25 −25 5 3 1 0.0 0.4 0.8 Base-emitter voltage 1.2 VBE (V) 100 300 500 (mA) IE = 0 A f = 1 MHz 50 Ta = 25°C 30 10 5 3 1 0.1 1.6 30 Cob – VCB 100 500 10 Collector current IC 1000 10 1000 50 Common emitter 500 I /I = 20 C B 300 1 0.1 300 VBE (sat) – IC 1000 10 10 0.3 1 3 10 30 100 Collector-base voltage VCB (V) 3 2007-11-01 2SC5376FV COLLECTOR POWER DISSIPATION PC (mW) PC – Ta 200 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 175 Ta (°C) 4 2007-11-01 2SC5376FV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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