2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1451A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A PC 30 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC ― JEITA ― TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC3709A Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 10 μA V (BR) CEO IC = 50 mA, IB = 0 50 ― ― V VCE = 1 V, IC = 1 A 70 ― 240 hFE (2) VCE = 1 V, IC = 6 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 6 A, IB = 0.3 A ― 0.25 0.4 V Base-emitter saturation voltage VBE (sat) IC = 6 A, IB = 0.3 A ― 0.9 1.2 V fT VCE = 5 V, IC = 1 A ― 90 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 180 ― pF ― 0.2 ― ― 1.0 ― ― 0.2 ― hFE (1) DC current gain (Note) Transition frequency Collector output capacitance ton 20 μs Storage time IB2 Switching time IB1 Input IB1 Turn-on time Cob tstg IB2 Output 5Ω Collector-emitter breakdown voltage μs VCC ≈ 30 V Fall time tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3709A Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SC3709A IC – VCE 80 Common emitter Tc = 25°C 60 8 50 6 Collector-emitter voltage Collector current IC (A) 70 VCE (V) 90 100 10 VCE – IC 1.0 40 30 4 20 2 IB = 10 mA 0 0 2 4 6 8 10 Collector-emitter voltage 12 0.8 40 60 0.4 500 0.2 2 6 4 12 (A) VCE – IC 1.0 VCE (V) Common emitter Tc = 100°C 0.8 IB = 20 mA 40 80 100 150 200 Collector-emitter voltage VCE (V) 10 8 Collector current IC VCE – IC Collector-emitter voltage 200 300 VCE (V) 1.0 0.6 300 0.4 500 0.2 0 0 2 6 4 10 8 Collector current IC 0.8 40 60 80 100 150 200 300 0.6 0.4 500 0.2 2 6 4 (A) 10 8 Collector current IC hFE – IC 12 (A) VCE (sat) – IC 1 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 1 V 300 Tc = 100°C 25 100 −55 50 30 10 0.1 Common emitter Tc = −55°C IB = 20 mA 0 0 12 500 DC current gain hFE 80 100 0.6 0 0 14 Common emitter Tc = 25°C IB = 20 mA 0.3 1 3 Collector current IC 10 0.5 0.3 Tc = −55°C 25 0.1 (A) 100 0.05 0.02 0.1 20 Common emitter IC/IB = 20 0.3 1 3 Collector current IC 3 10 20 (A) 2006-11-10 2SC3709A VBE (sat) – IC IC – VBE 10 Common emitter IC/IB = 20 Common emitter VCE = 1 V 8 (A) 3 1 Tc = −55°C 100 0.5 Collector current IC Base-emitter saturation voltage VBE (sat) (V) 5 25 0.3 0.1 0.1 0.3 1 3 10 Collector current IC 6 Tc = 100°C 25 4 −55 2 20 (A) 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage 2.0 2.4 VBE (V) rth – tw Transient thermal resistance rth (°C/W) 100 Curves should be applied in thermal limited area. 30 (2) (Single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 1 0.3 0.1 0.001 0.1 0.01 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 30 IC max (pulsed)* PC – Ta 1 ms* (W) DC operation Tc = 25°C 1 0.5 0.1 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature 3 40 PC 3 0.3 (1) Tc = Ta Infinite heat sink (2) No heat sink 10 ms* IC max (continuous) Collector dissipation Collector current IC (A) 10 5 50 10 Collector-emitter voltage 20 10 (2) VCEO max 30 (1) 30 0 0 100 VCE (V) 40 80 120 160 200 240 Ambient temperature Ta (°C) 4 2006-11-10 2SC3709A RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-10