2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications · High voltage: VCBO = 200 V (max) · Small flat package · Complementary to 2SA1255 Unit: mm VCEO = 200 V (max) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range Marking JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) 1 2003-03-27 2SC3138 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA Collector-base breakdown voltage V (BR) CBO IC = 0.1 mA, IE = 0 200 ¾ ¾ V Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 200 ¾ ¾ V VCE = 3 V, IC = 10 mA 70 ¾ 240 hFE DC current gain (Note) Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ¾ 0.1 0.5 V Base-emitter saturation voltage VBE (sat) IC = 10 mA, IB = 1 mA ¾ 0.75 1.5 V fT VCE = 10 V, IC = 2 mA 50 100 ¾ MHz VCB = 10 V, IE = 0, f = 1 MHz ¾ 2 4 pF ¾ 0.3 ¾ ¾ 2 ¾ ¾ 0.4 ¾ Transition frequency Collector output capacitance Switching time Cob Turn-on time ton Storage time tstg Fall time Note: hFE classification tf VCC = 50 V, IC = 6 mA, IB1 = -IB2 = 0.6 mA, pulse width = 5 ms, duty cycle < = 2% ms O: 70~140, Y: 120~240 2 2003-03-27 2SC3138 3 2003-03-27 2SC3138 4 2003-03-27 2SC3138 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-03-27