2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications · Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) · Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF = 0.2dB (typ.) (f = 1 kHz). · Complementary to 2SA1015 (L). (O, Y, GR class). Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA JEDEC TO-92 Base current IB 50 mA JEITA SC-43 Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA VCE = 6 V, IC = 2 mA 70 ¾ 700 hFE (2) VCE = 6 V, IC = 150 mA 25 100 ¾ Collector-emitter VCE (sat) IC = 100 mA, IB = 10 mA ¾ 0.1 0.25 Base-emitter VBE (sat) IC = 100 mA, IB = 10 mA ¾ ¾ 1.0 hFE (1) DC current gain (Note) Saturation voltage V VCE = 10 V, IC = 1 mA 80 ¾ ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF Base intrinsic resistance rbb’ VCE = 10 V, IE = -1 mA, f = 30 MHz ¾ 50 ¾ W ¾ 0.5 6 Transition frequency fT NF (1) Noise figure NF (2) Note: hFE (1) classification VCE = 6 V, IC = 0.1 mA RG = 10 kW, f = 100 Hz VCE = 6 V, IC = 0.1 mA RG = 10 kW, f = 1 kHz dB ¾ 0.2 3 O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700 1 2003-03-27 2SC1815(L) 2 2003-03-27 2SC1815(L) 3 2003-03-27 2SC1815(L) RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2003-03-27