TLP206G TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET TLP206G PBX Modem･FAX Card Measurement Instrument Unit in mm The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a 8 pin SOP. The TLP206G is a 2−Form−A switch which is suitable for replacement of mechanical relays in many application. • SOP 8 pin (2.54SOP8): 2−Form−A • Peak off−state voltage: 350V(min) • Trigger LED current: 3mA(max) • On−state current: 120mA(max) • On−state resistance: 35Ω(max) • Isolation voltage: 1500Vrms(min) • UL recognized: UL1577, file no.E67349 • BSI approved: BS EN60065: 2002, certificate no.8753 BS EN60950-1: 2002, certificate no.8754 • SEMKO approved: SS EN60065 SS EN60950 • Option(V4)type TUV approved: DIN EN 60747-5-2, certificate No. 40009351 JEDEC ― EIAJ ― TOSHIBA Weight: 0.2 g Schematic Pin Configuration (top view) 1 8 2 7 3 6 4 5 2-Form-A 1, 3 6, 8 8 1 2, 4 7 2 6 3 5, 7 5 4 1, 3: Anode 2, 4: Cathpde 5: Drain D1 6: Drain D2 7: Drain D3 8: Drain D4 1 2007-10-01 TLP206G Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.5 mA / °C Pulse forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 350 V Forward current LED Forward current derating (Ta ≥ 25°C) Detector Off−state output terminal voltage On−state current On−state RMS current derating(Ta ≥ 25°C) Both channel (Note 1) One channel Both channel (Note 1) 100 ION ΔION / °C One channel Junction temperature mA 120 −1.0 mA / °C −1.2 Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 1500 Vrms Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two−terminal device: Pins1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VDD ― ― 280 V Forward current IF 5 7.5 25 mA On−state current ION ― ― 100 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP206G Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Off−state current IOFF VOFF = 350 V — — 1 μA Capacitance COFF V = 0,f = 1MHZ — 40 — pF MIn. Typ. Max. Unit ION = 120 mA — 1 3 mA ION = 120 mA, IF = 5 mA — 22 35 Ω Min. Typ. Max. Unit — 0.8 — pF — Ω Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current IFT On−state resistance RON Test Condition Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance Test Condition VS = 0, f = 1 MHz RS VS = 500 V, R.H. ≤ 60% 5×10 AC, 1 minute Isolation voltage BVS 10 10 14 1500 — — AC, 1 second, in oil — 3000 — DC, 1 minute, in oil — 3000 — Vdc Min. Typ. Max. Unit — 0.3 1 — 0.1 1 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn−on time tON Turn−off time tOFF Test Condition RL = 200Ω VDD = 20 V, IF = 5 mA (Note 3) ms (Note 3): Switching time test circuit IF 1, 3 6, 8 2, 4 5, 7 RL VDD IF VOUT VOUT tON 3 90% 10% tOFF 2007-10-01 TLP206G IF – Ta ION – Ta 140 Allowable MOSFET on-state current ION(RMS) (mA) Allowable forward current IF (mA) 100 80 60 40 20 0 －20 0 20 60 40 100 80 60 40 20 0 －20 120 100 80 120 20 0 Ambient temperature Ta (°C) IFP – DR 80 100 IF –VF 100 Pulse width ≤ 100μs 3000 50 Ta = 25°C Ta = 25°C (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 60 Ambient temperature Ta (°C) 5000 300 100 50 30 10 3 40 5 3 1 0.5 0.3 10 －3 10－ 3 2 10－ 3 Duty cycle ratio 1 10 3 0.1 0.6 0 0.8 DR 1.2 1.0 1.4 Forward voltage VF ΔVF / ΔTa – IF 1.6 1.8 2.6 3.0 (V) IFP – VFP 1000 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) －2.8 －2.4 －2.0 －1.6 －1.2 －0.8 500 300 100 50 30 10 5 Pulse width ≤ 10μs 3 Repetitive frequency = 100Hz Ta = 25°C －0.4 0.1 0.3 0.5 1 3 Forward current IF 5 10 30 0 0.6 50 (mA) 1.0 1.4 1.8 Pulse forward voltage 4 2.2 VFP (V) 2007-10-01 TLP206G IFT – Ta ION – VON 150 (mA) ION = 120mA 4 MOSFET on-state current ION Relative trigger LED current IFT / IFT (Ta = 25°C) 5 3 2 1 0 －40 －20 0 20 40 60 80 Ta = 25°C IF = 5mA 100 50 0 －50 －100 －150 －2.5 100 Ambient temperature Ta (°C) －1.5 MOSFET on-state voltage RON – Ta 1000 (mA) (Ω) ION = 120mA VOFF = 350V 500 30 300 MOSFET off-state current 100 20 10 －20 0 20 40 60 80 50 30 10 5 3 1 －20 100 0 Ambient temperature Ta (°C) 40 20 tON – Ta VDD = 20V RL = 200Ω IF = 5ｍA RL = 200Ω Turn-off time tOFF (ms) IF = 5ｍA 600 400 200 0 －40 －20 0 20 40 100 tOFF – Ta 400 VDD = 20V 800 80 60 Ambient temperature Ta (°C) 1000 (ms) VON (V) ION IF = 5mA 0 －40 Turn-on time tON 2.5 1.5 IOFF – Ta 40 MOSFET on-state resistance RON 0.5 －0.5 60 80 300 200 100 0 －40 100 Ambient temperature Ta (°C) －20 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2007-10-01 TLP206G RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01