TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC/DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 3.0 Pulse ICP 5.0 IB 300 Collector current Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range PC (Note 1) 0.8 1.6 A mA W JEDEC ― JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-3T1A Weight: 0.01 g (typ.) Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPC6502 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cutoff current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V Collector-emitter breakdown voltage hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF Rise time tr See Figure 1 circuit diagram. ⎯ 40 ⎯ Storage time tstg VCC ∼ − 30 V, RL = 30 Ω ⎯ 500 ⎯ Fall time tf IB1 = −IB2 = 33.3 mA ⎯ 120 ⎯ DC current gain Collector output capacitance Switching time ns VCC IB1 Input IB1 RL 20 μs Output IB2 IB2 Duty cycle < 1% Figure 1. Switching Time Test Circuit & Timing Chart Circuit Configuration 6 5 Marking 4 Lot code (month) Part No. (or abbreviation code) 1 2 Lot No. H2B Product-specific code 3 Pin #1 2 Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-13 TPC6502 IC – VCE hFE – IC 10000 Common emitter Common emitter Ta＝25℃ Ta = 25°C Single nonrepetitive Single nonrepetitive pulse 70 60 3 Common emitter Common emitter VCE=2V V 2V CE Single= nonrepetitive Single nonrepetitive pulse 50 40 70 DC current gain hFE Collector current IC (A) 4 30 60 20 2 10 5 1 Ta＝100℃ 1000 25 -55 100 2 IB=1mA 10 0.001 0 0 0.2 0.4 0.6 0.8 1 0.01 Collector-emitter voltage VCE (V) Collector current IC VCE (sat) – IC Common emitter Common emitter IC/IB=50 IC /IB = 50 Single nonrepetitive Single nonrepetitive pulse 0.1 0.1 Ta=100℃ -55 25 0.01 0.01 0.001 0.001 0.001 0.01 0.1 Collector current 1 IC 1 10 (A) VBE (sat) – IC 10 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 11 0.1 Common emitter Common emitter IC/IB＝50 I /I 50 C B =nonrepetitive Single Single nonrepetitive pulse -55 1 0.1 0.001 10 (A) 25 Ta＝100℃ 0.01 0.1 1 Collector current IC (A) 10 IC – VBE 3 Collector current IC (A) Common emitter VCE = 2 V Single nonrepetitive pulse 2 1 Ta = 100°C 25 −55 0 0 0.4 0.8 Base-emitter voltage 1.2 1.6 VBE (V) 3 2006-11-13 TPC6502 rth(j-a) – tw Transient thermal resistance rth(j-a) (°C/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 1 10 Pulse width 100 1000 tw (s) Safe Operating Area 10 IC IMAX.（pulsed）※ C max (pulse) * 10ms※ 10 ms* 11ms※ ms* 100μs※ 100 μs* 10μs※ 10 μs* Collector current IC (A) ICP MAX.（continuous） 10s※ 100ms※ Ic MAX (continuous) 10 s* 100 ms* 1 0.1 DC operation DC o p Ta = (Ta=25℃） 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices are not mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 10 100 Collector-emitter voltage VCE (V) 4 2006-11-13 TPC6502 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13