TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain • Low collector-emitter saturation voltage : VCE (sat) = 0.17 V (max) • High-speed switching : hFE = 400 to 1000 (IC = 0.1 A) : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 7 V DC IC 1.0 Pulse ICP 2.0 IB 0.1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range DC t = 10 s PC 0.8 1.6 A A W JEDEC ― JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-3T1C Weight: 0.011 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-23 TPC6504 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.1 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 0.3 A 200 ⎯ ⎯ Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 0.17 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 1.1 V VCB = 10 V, IE = 0, f = 1 MHz ⎯ 5 ⎯ pF ⎯ 35 ⎯ ⎯ 680 ⎯ ⎯ 85 ⎯ Collector output capacitance Cob Rise time Switching time tr Storage time See Figure 1 circuit diagram. VCC ≈ 30 V, RL = 100 Ω IB1 = IB2 = 10mA tstg Fall time tf ns Figure 1. Switching Time Test Circuit & Timing Chart VCC 20 μs RL IB1 Input 0 IB1 Output IB2 IB2 Duty cycle < 1% Circuit Configuration 6 5 Marking Lot code (month) 4 Part No. (or abbreviation code) 1 2 Pin #1 3 Lot No. H2D Product-specific code Lot code (year) Note 4 Note 4 : A dot marking identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-07-23 TPC6504 IC – VCE hFE – IC 1 20 10000 10 15 6 DC current gain hFE Collector current IC (A) 8 0.8 4 0.6 2 0.4 IB = 1mA Ta = 100°C 1000 25 −55 100 0.2 Common emitter Ta = 25°C Single pulse test 0 0 0.2 0.4 0.6 0.8 1 10 1.2 Common emitter VCE = 2 V Single pulse test 0.001 Collector-emitter voltage VCE (V) 0.01 Collector current IC VCE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 50 Single pulse test Ta = 100°C 25 −55 0.01 0.001 0.01 0.1 Collector current IC 1 (A) VBE (sat) – IC 10 0.1 Common emitter IC/IB = 50 Single pulse test 25 1 Ta = 100°C 0.1 0.001 1 (A) −55 0.01 Collector current IC 0.1 1 (A) IC－VBE (A) 1 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) 1 0.1 Common emitter VCE = 2 V Single pulse test 0.8 0.6 0.4 Ta = 100°C 25 −55 0.8 1 0.2 0 0 0.2 0.4 0.6 Base-emitter voltage 1.2 VBE (V) 3 2009-07-23 TPC6504 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 10 10 ms* 1 ms* 100 μs* 10 μs* IC max (Continuous) 1 100 ms* DC operation Ta = 25°C 0.1 0.01 *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 10ms, 100 ms, 10 s and DC operation will be different when the device aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 10 s* VCEO max Collector current IC (A) IC max (Pulse)* 0.001 0.1 1 10 100 Collector-emitter voltage VCE (V) 4 2009-07-23 TPC6504 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-07-23