2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 High collector breakdown voltage: VCES = 800 V, VCEO = 375 V Symbol Rating Unit VCBO 800 V 800 V VCEO 375 V VEBO 8 V DC IC 1.5 Pulse ICP 3 Base current IB 0.75 Collector power dissipation PC Junction temperature Tj Tstg −55 to 150 °C Emitter-base voltage Collector current Storage temperature range A １ ０．６ MAX ２．３ ２ ０．８ MAX． １．1 MAX． ３ ２．３±０．２ ２．３ VCES Collector-emitter voltage １．１±０．２ ０．９ Absolute Maximum Ratings (Ta = 25°C) Collector-base voltage ０．６ MAX． ５．７ • ４．１±０．２ Excellent switching times: tf = 0.15 μs (typ.) １．６ ５．２±０．２ ５．５±０．２ ６．５±０．２ • Characteristics １．５±０．２ Unit: mm ○ High Voltage Switching Applications ○ Switching Regulator Applications ○ DC-DC Converter Applications ０．６±０．１５ ０．６±０．１５ 1. BASE 2. COLLECTOR 3. EMITTER JEDEC ⎯ A JEITA ⎯ 1.1 W TOSHIBA 150 °C 2-7J2A Weight: 0.32 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-04-23 2SC6142 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit ICBO VCB = 800 V, IE = 0 ⎯ ⎯ 50 μA Emitter cutoff current IEBO VEB = 8 V, IC = 0 ⎯ ⎯ 100 nA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 800 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 375 ⎯ ⎯ hFE (1) VCE = 5 V, IC = 1 mA 80 ⎯ ⎯ hFE (2) VCE = 5 V, IC = 0.1 A 100 ⎯ 200 hFE (3) VCE = 5 V, IC = 0.2 A 80 ⎯ ⎯ Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ⎯ ⎯ 0.9 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ⎯ ⎯ 1.3 V 667Ω Collector cutoff current ⎯ 0.2 ⎯ Output ⎯ 3.5 ⎯ ⎯ 0.15 ⎯ DC current gain VCC ≈ 200 V tr IB1 20 μs Rise time 0 Switching time Storage time I tstg Fall time tf IB1 IC Input IB2 IB1 = 20 mA, IB2 = 50 mA Duty cycle ≤ 1% ⎯ μs Marking C6142 Part No. (or abbreviation code) Lot No. Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-04-23 2SC6142 IC – VCE 1.5 IC – VCE 1.5 150mA 80mA 0.9 40mA 0.6 100mA 80mA 60mA 1.2 40mA IC 60mA Collector current Collector current (A) 100mA 1.2 IC (A) 150mA 20mA IB=10mA 0.3 0.9 20mA 0.6 IB=10mA 0.3 Common emitter Ta = 25°C Single Pulse test Common emitter Ta = 25°C Single Pulse test 0 0 0 0.4 0.8 1.2 1.6 Collector-emitter voltage VCE 2 0 2 (V) 4 hFE－IC Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE Ta = 100°C 100 −55°C 10 1 Common emitter VCE = 5 V Single Pulse test 0.01 0.1 Collector current Common emitter IC/IB = 8 Single Pulse test 10 1 25°C −55°C Ta = 100°C 0.1 1 IC 10 0.001 0.01 (A) 0.1 1 Collector current VBE (sat) – IC IC 10 (A) IC – VBE 1.5 Common emitter VCE = 5 V Single Pulse test 1.2 IC (A) Common emitter IC/IB = 8 Single Pulse test 10 Collector current Base-emitter saturation voltage VBE (sat) (V) (V) 0.01 0.1 100 VCE 10 VCE (sat) – IC 100 0.001 8 Collector-emitter voltage 1000 25°C 6 −55°C 1 Ta = 100°C 0.6 Ta = 100°C 0.3 25°C 25°C 0.1 0.001 0.9 −55°C 0 0.01 0.1 Collector current 1 IC 0 10 (A) 0.4 0.8 Base-emitter voltage 3 1.2 VBE 1.6 (V) 2010-04-23 2SC6142 rth(j-a) – tw Transient thermal resistance rth(j-a) (°C/W) 1000 100 10 1 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 1000 100 (s) PC – Ta Safe Operating Area 10 1.2 IC max (Pulse)* PC (W) 10μs* 10 ms* DC operation Ta＝25℃ Collector power dissipation Collector current 100μs* 100 ms* 1 IC (A) IC max (continuous) 1 ms* 0.1 0.01 *:Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 10 Collector-emitter voltage 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Ambient temperature Ta (°C) VCEO max 100 1 1000 VCE (V) 4 2010-04-23 2SC6142 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2010-04-23