TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain : hFE = 200 to 500 (IC = −0.1 A) • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max) • High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC IC −1 Pulse ICP −2 IB −0.1 PC 1.1 Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC 1. BASE A 2. EMITTER 3. COLLECTOR A W (Note 1) 0.7 Tj 150 °C Tstg −55 to150 °C JEDEC － JEITA － TOSHIBA 2-3S1C Weight: 0.01 g (typ.) 2 Note1: Mounted on FR4 board (glass epoxy; 645 mm ,1.6 mm thick; Cu area: 645 mm2) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-08 TTA007 Electrical Characteristics (Ta = 25℃) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −100 nA V (BR) CEO V Collector-emitter breakdown voltage IC = −10 mA, IB = 0 −50 ― ― hFE (1) VCE = −2 V, IC = −0.1 A 200 ― 500 hFE (2) VCE = −2 V, IC = −0.3 A 125 ― ― Collector-emitter saturation voltage VCE (sat) IC = −0.3 A, IB = −10 mA ― ― −0.2 V Base-emitter saturation voltage VBE (sat) IC = −0.3 A, IB = −10 mA ― ― −1.1 V VCB = −10 V, IE = 0, f = 1MHz ― 8 ― pF See Figure 1 ― 60 ― VCC = −30 V、RL = 100 Ω ― 280 ― IB1 = IB2 = 10 mA ― 70 ― DC current gain Collector output capacitance Rise time Switching time Storage time Fall time Cob tr tstg tf － ns Marking Part No. (or abbreviation code) W H 0 Lot code (year) Dot: even year No Dot: odd year Duty cycle ＜1% Figure 1. Lot code (month) Switching Time Test Circuit 2 2010-02-08 TTA007 IC – VCE hFE – IC -1 10000 -40 -50 -30 -0.8 -0.6 DC current gain Collector current hFE -20 -15 IC (A) -100 -10 -5 -0.4 -2 -0.2 Common emitter Ta = 25°C Single pulse test IB =−1mA 0 0 -0.2 -0.4 -0.6 Collector−emitter voltage VCE 25°C -1 −55°C 100 10 1 -0.8 Ta = 100°C 1000 Common emitter VCE = -2 V Single pulse test -0.001 -0.01 (V) Collector current VCE (sat) – IC IC -1 (A) VBE (sat) – IC -10 Base−emitter saturation voltage VBE (sat) (V) -10 Collector−emitter saturation voltage VCE (sat) (V) -0.1 -1 Ta = 100°C 25°C -0.1 −55°C -0.01 Common emitter IC/IB = 30 Single pulse test -0.001 -0.001 -0.01 -0.1 Collector current IC -1 -55°C Ta = 100°C 25°C Common emitter IC/IB = 30 Single pulse test -0.1 -0.001 -1 (A) -0.01 Collector current -0.1 -1 IC (A) IC – VBE Common emitter VCE = -2 V Single pulse test -0.8 Collector current IC (A) -1 Ta = 100°C -0.6 -0.4 −55°C 25°C -0.2 0 0 -0.2 -0.4 -0.6 Base−emitter voltage -0.8 VBE -1.0 -1.2 (V) 3 2010-02-08 TTA007 rth(j-a) － tw 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 645 mm2,1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area -10 IC max. (pulsed)* 1ms* IC max. (continuous) 10 ms* -1 IC (A) 100 ms* Collector current Transient thermal resistance rth(j-a) (℃/W) 1000 10s* -0.1 DC operation Ta = 25°C * Single nonrepetitive pulse Ta = 25°C ・Mounted on an FR4 board (glass-epoxy; 645 mm2,1.6 mm thick; Cu area, 645 mm2) -0.01 ・Note that the curves for 100ms,10s and DC operation will be different when the devices aren’t mounted on an FR4 board. ・Curves must be derated linearly with increase in temperature. VCEO max -0.001 -0.1 -1 -10 Collector−emitter voltage 4 VCE -100 (V) 2010-02-08 TTA007 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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