HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 : hFE = 120~400 6 2 5 3 4 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE 0.48 : VCEO = −50 V, IC = −100 mA (max) • : hFE = 120~400 Q1 Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 30 mA fS6 0.15±0.05 1 +0.02 -0.04 Q2 • High voltage and high current 0.1±0.05 0.1±0.05 High hFE 0.35 0.35 • 1.0±0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.7±0.05 : VCEO = 50 V, IC = 100 mA (max) • Characteristic 0.8±0.05 0.1±0.05 Q1 • High voltage and high current 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 JEDEC ― JEITA ― TOSHIBA (E1) (B1) (C2) (E2) (B2) (C1) 2-1F1D Weight: 0.0008 g (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −30 mA Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation PC 50* mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating 1 2007-11-01 HN1B26FS Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cutoff current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA 120 ⎯ 400 ⎯ IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V VCE = 10 V, IC = 1 mA 60 ⎯ ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.95 ⎯ pF Min Typ. Max Unit DC current gain hFE (Note) Collector-emitter saturation voltage Transition frequency VCE (sat) fT Collector output capacitance Cob VCE = 6 V, IC = 2 mA Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Collector cutoff current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cutoff current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA 120 ⎯ 400 ⎯ IC = −100 mA, IB = −10 mA ⎯ −0.18 −0.3 V VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 1.6 ⎯ pF DC current gain hFE (Note) Collector-emitter saturation voltage Transition frequency VCE (sat) fT Collector output capacitance Cob VCE = −6 V, IC = −2 mA Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol Marking Equivalent Circuit (top view) Type name 6 5 4 hFE Rank TF Q2 Q1 1 2 2 3 2007-11-01 HN1B26FS Q1 IC - VCE hFE - IC 1000 120 1.5 1.0 COLLECTOR CURRENT IC (mA) Ta = 100°C 0.7 80 0.5 60 0.3 DC CURRENT GAIN hFE 2.0 100 0.2 40 IB=0.1mA 20 -25 100 COMMON EMITTER VCE = 6V VCE = 1V COMMON EMITTER Ta = 25°C 0 10 0 1 2 3 4 5 6 7 0.1 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 10 100 COLLECTOR CURRENT IC (mA) VBE(sat) - IC VCE(sat) - IC 10 1 COMMON EMITTER IC/IB = 10 0.1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 25 Ta = 100°C 25 -25 COMMON EMITTER IC/ IB = 10 25 -25 1 Ta = 100°C 0.1 0.01 0.1 1 10 0.1 100 COLLECTOR CURRENT IC (mA) 1 10 100 COLLECTOR CURRENT IC (mA) IB - VBE BASE CURRENT IB (μA) 1000 100 Ta = 100°C 10 25 -25 1 COMMON EMITTER VCE = 6V 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 BASE-EMITTER VOLTAGE VBE (V) 3 2007-11-01 HN1B26FS Q2 hFE - IC IC - VCE 1000 -120 COLLECTOR CURRENT IC (mA) -100 -1.5 DC CURRENT GAIN hFE COMMON EMITTER Ta = 25°C -2.0 -1.0 -80 -0.7 -60 -0.5 -40 -0.3 -0.2 Ta = 100°C 100 IB = -0.1mA -00 -1 -2 -3 -4 -5 -6 10 -0.1 -7 COLLECTOR-EMITTER VOLTAGE VCE (V) -1 -10 -100 COLLECTOR CURRENT IC (mA) VCE(sat) - IC VBE(sat) - IC -1 -10 COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -25 COMMON EMITTER VCE = −6V VCE = −1V -20 -00 25 -0.1 Ta = 100°C 25 -25 -0.01 -0.1 -1 -10 COMMON EMITTER IC/IB = 10 25 -0.1 -0.1 -100 COLLECTOR CURRENT IC (mA) -25 -1 -1 Ta = 100°C -10 -100 COLLECTOR CURRENT IC (mA) IB - VBE BASE CURRENT IB (uA) -1000 -100 Ta = 100°C -10 -25 25 -1 COMMON EMITTER VCE = −6V -0.1 -00 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 BASE-EMITTER VOLTAGE VBE (V) 4 2007-11-01 HN1B26FS Q1, Q2 COMMON COLLECTOR POWER DISSIPATION PC (mV) PC*- Ta 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) *: Total rating 5 2007-11-01 HN1B26FS RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01