TOREX TLN233

TLN233
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN233
Infrared LED for Space-Optical-Transmission
Unit: mm
·
High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA
·
Half-angle value: θ1/2 = ±13° (typ.)
·
A light source for remote control
·
Wireless AV-signal transmission purpose
·
High speed data transmission purpose
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
100
mA
Pulse forward current
IFP
1000
(Note 1)
mA
Power dissipation
PD
200
mW
Reverse voltage
VR
4
V
Operating temperature range
Topr
-25~85
°C
Storage temperature range
Tstg
-30~100
°C
JEDEC
―
Soldering temperature (5 s), (Note 2)
Tsol
260
°C
JEITA
―
TOSHIBA
Note 1: f = 100 kHz, duty = 1%
4-5V3
Note 2: Soldering must be performed under the stopper.
Pin Connection
1
1
2
1. Anode
2. Cathode
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TLN233
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 100 mA
¾
1.6
2.0
V
Reverse current
IR
VR = 4 V
¾
¾
60
mA
Radiant intensity
IE
IF = 50 mA
46
80
¾
mW/sr
Radiant power
PO
IF = 50 mA
¾
30
¾
mW
¾
15
¾
MHz
IF = 50 mA
¾
870
¾
nm
IF = 50 mA
¾
±13
¾
°
Cut-off frequency
fc
IF = 50 mA + 5 mAP-P
Peak emission wavelength
lP
Half-angle value
1
q
2
(Note 3)
Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz.
Handling Precautions
·
Soldering must be performed under the stopper.
·
When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the
leads have been formed.
·
The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits,
the device must take into account the change in radiant intensity over time. The change in radiant intensity is
equal to the reciprocal of the change in LED infrared optical output.
IE (t) P o (t)
=
IE (0) P o (0)
2
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TLN233
IF – Ta
IF – VF
75°C
(mA)
100
Forward current IF
Allowable forward current
80
60
40
-25°C
10
1
85°C
0°C
Ta = 25°C
50°C
0.1
20
0
0
20
40
60
80
0.01
0.8
100
1
1.2
Ambient temperature Ta (°C)
VF – Ta
(typ.)
50 mA
1.4
30 mA
1.3
1.2
(mA)
IFP
70 mA
300
100
Pulse forward current
(V)
VF
VF
1.8
2
(V)
IFP – VFP
100 mA
1.5
1.6
(typ.)
1000
1.7
1.6
1.4
Forward voltage
1.8
Forward voltage
(typ.)
100
IF
(mA)
120
IF = 10 mA
1.1
30
10
Pulse width <
= 100 ms
3
Repetitive frequency = 100 Hz
Ta = 25°C
1
-50
-25
0
25
50
75
1
0
100
Ambient temperature Ta (°C)
1
IFP – Pw
(mA)
Pulse width = 1 ms
1.0
Relative radiant intensity
Allowable pulse forward current IFP
5
Relative IE – IFP
3000
f = 100 Hz
1000
200 Hz
500 Hz
1 kHz
2 kHz
5 kHz
10 kHz
Duty = 10%
Ta = 25°C
0.8
0.6
0.4
0.2
30
10
1
4
1.2
Ta = 25°C
100
3
Pulse forward voltage VFP (V)
10000
300
2
10
100
Pulse width
1000
Pw
0
0
10000
(ms)
200
400
600
Pulse forward current
3
800
IFP
1000
1200
(mA)
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TLN233
Relative IE – Ta
Wavelength characteristic
1
(typ.)
10
IF = 50 mA
IF = 50 mA
Relative radiant intensity
Relative power intensity
0.8
0.6
0.4
0.2
0
700
740
780
820
860
Wavelength l
900
940
3
1
0.3
0.1
-50
980
(nm)
-25
0
25
50
75
100
Ambient temperature Ta (°C)
Radiation pattern
(typ.)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
80°
0
0.2
0.4
0.6
0.8
90°
1.0
Relative radiant power
4
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TLN233
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-17