TLN233 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233 Infrared LED for Space-Optical-Transmission Unit: mm · High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA · Half-angle value: θ1/2 = ±13° (typ.) · A light source for remote control · Wireless AV-signal transmission purpose · High speed data transmission purpose Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current IF 100 mA Pulse forward current IFP 1000 (Note 1) mA Power dissipation PD 200 mW Reverse voltage VR 4 V Operating temperature range Topr -25~85 °C Storage temperature range Tstg -30~100 °C JEDEC ― Soldering temperature (5 s), (Note 2) Tsol 260 °C JEITA ― TOSHIBA Note 1: f = 100 kHz, duty = 1% 4-5V3 Note 2: Soldering must be performed under the stopper. Pin Connection 1 1 2 1. Anode 2. Cathode 2002-01-17 TLN233 Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 100 mA ¾ 1.6 2.0 V Reverse current IR VR = 4 V ¾ ¾ 60 mA Radiant intensity IE IF = 50 mA 46 80 ¾ mW/sr Radiant power PO IF = 50 mA ¾ 30 ¾ mW ¾ 15 ¾ MHz IF = 50 mA ¾ 870 ¾ nm IF = 50 mA ¾ ±13 ¾ ° Cut-off frequency fc IF = 50 mA + 5 mAP-P Peak emission wavelength lP Half-angle value 1 q 2 (Note 3) Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz. Handling Precautions · Soldering must be performed under the stopper. · When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the leads have been formed. · The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits, the device must take into account the change in radiant intensity over time. The change in radiant intensity is equal to the reciprocal of the change in LED infrared optical output. IE (t) P o (t) = IE (0) P o (0) 2 2002-01-17 TLN233 IF – Ta IF – VF 75°C (mA) 100 Forward current IF Allowable forward current 80 60 40 -25°C 10 1 85°C 0°C Ta = 25°C 50°C 0.1 20 0 0 20 40 60 80 0.01 0.8 100 1 1.2 Ambient temperature Ta (°C) VF – Ta (typ.) 50 mA 1.4 30 mA 1.3 1.2 (mA) IFP 70 mA 300 100 Pulse forward current (V) VF VF 1.8 2 (V) IFP – VFP 100 mA 1.5 1.6 (typ.) 1000 1.7 1.6 1.4 Forward voltage 1.8 Forward voltage (typ.) 100 IF (mA) 120 IF = 10 mA 1.1 30 10 Pulse width < = 100 ms 3 Repetitive frequency = 100 Hz Ta = 25°C 1 -50 -25 0 25 50 75 1 0 100 Ambient temperature Ta (°C) 1 IFP – Pw (mA) Pulse width = 1 ms 1.0 Relative radiant intensity Allowable pulse forward current IFP 5 Relative IE – IFP 3000 f = 100 Hz 1000 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 10 kHz Duty = 10% Ta = 25°C 0.8 0.6 0.4 0.2 30 10 1 4 1.2 Ta = 25°C 100 3 Pulse forward voltage VFP (V) 10000 300 2 10 100 Pulse width 1000 Pw 0 0 10000 (ms) 200 400 600 Pulse forward current 3 800 IFP 1000 1200 (mA) 2002-01-17 TLN233 Relative IE – Ta Wavelength characteristic 1 (typ.) 10 IF = 50 mA IF = 50 mA Relative radiant intensity Relative power intensity 0.8 0.6 0.4 0.2 0 700 740 780 820 860 Wavelength l 900 940 3 1 0.3 0.1 -50 980 (nm) -25 0 25 50 75 100 Ambient temperature Ta (°C) Radiation pattern (typ.) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 80° 0 0.2 0.4 0.6 0.8 90° 1.0 Relative radiant power 4 2002-01-17 TLN233 RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-01-17