PANASONIC AN7504SB

ICs for Audio Common Use
AN7504SB
Pre-amp. and power amp. IC for 1.5 V headphone stereo
■ Overview
28
14
15
11.6±0.3
1
0.3±0.1
Unit: mm
The AN7504SB is a low voltage operation headphone
amp. IC for headphone C-cassette stereo. It incorporates
tape selector, pre-amp. , soft AGC bass-boost circuit, etc.
■ Features
(0.4)
7.2±0.3
9.3±0.3
2.05±0.2
• Headphone stereo
0.2 +0.1
−0.05
■ Applications
0.9±0.1
0.1±0.1
0.9±0.1
0.8
• Low voltage operation (0.98 V to 2.0 V)
• Tape selector switch built-in
• Low frequency boost function with soft AGC
SSOP028-P-0375A
Note) The package of this product will be changed
to lead-free type (SSOP028-P-0375E). See the
new package dimensions section later of this
datasheet.
15
REV/FWD/ 14
Pre-mute
12
PWR-out (R)
11
VCCP
10
GND
9
PWR-out (L)
8
7
SDC00029BEB
STB/PWR mute 13
Control
VRPF
6
5
4
3
Publication date: December 2001
16
17
18
Low BST
PWR-in (R)
19
AGC
Ripple filter
Pre-in (L)
2
VREF
Pre-in (R)
1
Bias
20
PWR-in (L)
FWD/REV
Pre-mute
21
22
23
Tape-select
24
Pre-out (L)
25
26
27
28
Pre-out (R)
■ Block Diagram
1
AN7504SB
■ Absolute Maximum Ratings
Parameter
Supply voltage
Symbol
Rating
Unit
VCC
2.1
V
ICC
20
mA
PD
42
mW
Topr
−20 to +70
°C
Tstg
−55 to +125
°C
Supply current
Power dissipation
*2
Operating ambient temperature
Storage temperature
*1
*1
Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
Keep VCC (0.95 V to 0.98 V) free from any abnormal operation such as oscillation.
*2: The power dissipation shown is the value for Ta = 75°C. For the independent IC without a heat sink.
■ Recommended Operating Range
Parameter
Supply voltage
Symbol
Range
Unit
VCC
0.98 to typ. 1.2 to 2.0
V
■ Electrical Characteristics at VCC = 1.2 V, f = 1 kHz, RL = 32 Ω, Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Voltage gain
GV
VO = −22.2 dBV
54
57
60
dB
Circuit current 1
ICC1
VIN = 0, RG = 2.2 kΩ, LBST off

2.2
5.3
mA
VO = −22.2 dBV
32.5
34
35.5
dB
Max. output voltage
VOmax(PB) THD = 1%, 30 kHz LPF on
120
210

mV
Total harmonic distortion
THD(PB)
VO = 22.2 dBV, 30 kHz LPF on
GVC = 35 dB (NAB)

0.2
0.6
%
Output noise voltage
VNO(PB)
RG = 2.2 kΩ, 1HF-A

−90
−76
dBV

−85
−70
dB
21
23
25
dB
Pre-amp. block
Closed circuit voltage gain
Mute attenuation
GVC(PB)
GMUTE(PB) Ratio as VO = −22.2 dBV
Pre-mute on
Boost low sound and power amp. block
Voltage gain 1
GV1(PW)
VO = −22.2 dBV
Voltage gain 2
GV2(PW)
LBOOST on, VO = −22.2 dBV
21.4
23.4
25.4
dB
POUT
THD = 10%, 30 kHz LPF on
2.5
4.5

mW
Total harmonic distortion
THD(PW)
POUT = 1 mW, 30 kHz LPF on

0.35
1.3
%
Output noise voltage 1
VNO1(PW)
RG = 0.1, 1HF-A

−91
−86
dBV
Output noise voltage 2
VNO2(PW)
LBOOST on, RG = 0, 1HF-A

−86
−82
dBV
−1.5
0
1.5
dB

−96
−90
dBV
Rating output power
Channel balance
Mute output voltage
AGC level
CB(PW)
VO = −22.2 dBV
VMUTE(PW) VIN = −32.2 dBV
VAGC
VIN = −45.2 dBV, f = 100 Hz
RL = 32 Ω
AGC level: 32 Ω edge measure
2
SDC00029BEB
−17.3 −14.7 −13.1
dBV
AN7504SB
■ Electrical Characteristics at VCC = 1.2 V, f = 1 kHz, RL = 32 Ω, Ta = 25°C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
24
30

dB
Ripple filter block
Ripple rejection ratio
RR
VCC = 1.1 V, VRR = −32.2 dBV
fRR = 100 Hz, IRFO = 15 mA
BPF: 100 Hz, 1/4 OCT
VRPF
VCC = 1.0 V, IRFO = 15 mA
0.89
0.94

V
VREF
VCC = 1.0 V
0.68
0.76
0.83
V
Threshold voltage at
standby on
VSTON
Low: Power off


0.1
V
Threshold voltage at
standby off
VSTOFF
Open: Power on
(Power mute on)
VSTOFF = 1/2VCC − V13
− 0.2

0.2
V
Bias voltage at
power mute off
VMTOFF
Open: Power mute off
VMTOFF = VCC − V13


0.1
V
DC output voltage
Bias block
DC output voltage
Control block
Low threshold at
FWD/REV/pre-mute
VTH1L
Low: REV


0.1
V
High threshold at
FWD/REV/pre-mute
VTH1H
High: Pre-mute on
VTHIH = VCC − V1


0.1
V
Low threshold at low boost
off
VLBOFF
Low: LBOOST off


0.3
V
Low threshold at tape select
off
VTPOFF
Low: Tape-select off


0.3
V
• Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Parameter
Circuit current 2
Symbol
ICC2
Conditions
POUT = 0.5 mW, × 2-ch., RL = 32 Ω
Min
Typ
Max
Unit

6.5
11.2
mA
7.2
9.5
12
kΩ
Boost low sound and power amp. block
Input resistance
RIN(PW)

SDC00029BEB
3
AN7504SB
■ Terminal Equivalent Circuits
Note) The values mentioned below are the typical ones and is subject to change due to application condition and dispersion of IC.
Pin No.
Equivalent circuit
1
Description
VCC
Pins
26, 28
+
Pins
1,3
200 kΩ
25 kΩ
Waveform (typ.)
PB-in (R):
Playback amp. input
Pins
25, 27
DC 0.78 V
AC −66.2 dBV
VREF
GND
2
VREF:
Reference voltage output
2
DC 0.78 V
GND
4
+
GND
3
Refer to pin 1
PB-in (L):
Playback amp. input
4
Refer to pin 2
VREF-in:
Reference voltage input
DC 0.78 V
RF-in:
Ripple filter reference voltage input
DC 1.0 V
RF-base:
Ripple filter
DC 0.47 V
VRPF:
Ripple filter reference voltage output
DC 1.13 V
5
VCC
70 kΩ
Refer to pin 1
+
14 kΩ
5
100 kΩ
6
350 kΩ
GND
6
7
GND
7
GND
4
SDC00029BEB
AN7504SB
■ Terminal Equivalent Circuits (continued)
Note) The values mentioned below are the typical ones and is subject to change due to application condition and dispersion of IC.
Pin No.
Equivalent circuit
8
Description
VRPF
AGC-TAU:
AGC time constant
Waveform (typ.)

8
GND
9
VCC
Pins 9, 12 60 kΩ
PWR-out (L):
Power amp. voltage output
+
4 kΩ
DC 0.6 V
AC −8.8 dBV
GND
10

GND:
GND pin
11

VCC:
Power supply pin
12
Refer to pin 9
PWR-out (R):
Power amp. voltage output
13
VRPF
220 kΩ
13
0V
1.2 V
Refer to pin 9
STBY, PWR mute CNT:
PWR-mute off
Pin open: VCC − V13 < 0.1 V
PWR-mute on
− 0.2 V < 1/2VCC − V13 < 0.2 V
STBY on
V13 < 0.1 V

FWD/REV/Pre-mute:
FWD/REV/pre-mute control
Pre-mute
Voltage high: VCC − 0.1 < V14-19
FWD
Pin open
REV
Voltage low: V14-19 < 0.1

GND
14
VRPF
120 kΩ
14
120 kΩ
GND
SDC00029BEB
5
AN7504SB
■ Terminal Equivalent Circuits (continued)
Note) The values mentioned below are the typical ones and is subject to change due to application condition and dispersion of IC.
Pin No.
Equivalent circuit
Description
15
VRPF
50 kΩ
15
L-BST CNT:
Low boost on/off control
Waveform (typ.)
DC 0 V
L-BST on
Pin open
L-BST off
Voltage low: − 0.3 V < V11-19 < 0.3 V
10 kΩ
50 kΩ
GND
16
L-BST C:
Low boost Capacitor pin
+
15 kΩ
7.5 kΩ
16
7.5 kΩ
15 kΩ
VREF
DC 0.78 V
GND
17
VRPF
LPF2-C:
LPF2 Capacitor pin
45 kΩ
15 kΩ
17
+
7.5 kΩ
VREF
18
3 kΩ
+
18
30 kΩ
DC 0.78 V
GND
VRPF
L-BST C1:
Low boost Capacitor pin
30 kΩ
3 kΩ
DC 0.78 V
VREF
GND
6
SDC00029BEB
AN7504SB
■ Terminal Equivalent Circuits (continued)
Note) The values mentioned below are the typical ones and is subject to change due to application condition and dispersion of IC.
Pin No.
Equivalent circuit
Description
19
VRPF
19
+
90 kΩ
10 kΩ
VREF
20
PWR-in (R):
Power amp. input
12 kΩ
2 kΩ
VREF
DC 0.78 V
AC −32.2 dBV
LPF1-C:
LPF C pin
VRPF
21
Waveform (typ.)
DC 0.78 V
90 kΩ
10 kΩ
21
GND
20
PWR-in (L):
Power amp. input
Refer to pin 19
Tape-select on/off:
Tape select driver

Tape-select on/off:
Tape select driver

Tape-select on/off CNT:
Tape select driver

GND
22
Pins 22, 23
23
GND
24
VRPF
360 kΩ
20 kΩ
24
GND
25
Refer to pin 1
Driver on
Voltage high
Driver off
V24 < 0.3 V
PB-out (L):
Playback amp. output
DC 0.6 V
AC −32.2 dBV
SDC00029BEB
7
AN7504SB
■ Terminal Equivalent Circuits (continued)
Note) The values mentioned below are the typical ones and is subject to change due to application condition and dispersion of IC.
Pin No.
Equivalent circuit
26
Refer to pin 1
Description
Waveform (typ.)
PB-NF(L):
Playback amp. negative feedback
input
DC 0.78 V
27
Refer to pin 1
PB-OUT(R):
Playback amp. input
Refer to pin 25
28
Refer to pin 1
PB-NF(R):
Playback amp. negative feedback
input
Refer to pin 26
■ Application Notes
1. Operation logic of control pin
Pin 24
Low
High or Open
Tape select control
Off (Pins 22, 23 High)
On (Pins 22, 23 Low)
Pin 14
Low
Open
High
Pre-amp. system control
Reverse
Forward
Mute
Input pin → Output pin
Input pin → Output pin
Pin 1 → Pin 25
Pin 1 → Pin 27
Pin 3 → Pin 27
Pin 3 → Pin 25
Pin 13
Low 1
Low 2
High
Power amp. system control
Standby on
Standby off, Mute on
Mute on
Low 1: Short-circuit to GND
Low 2: 0.6 V application or short circuit to GND with 220 kΩ
8
SDC00029BEB
AN7504SB
■ Application Notes (continued)
2. Main characteristics
2. Distortion and amplitude at pre-amp. output
Input  Distortion/output voltage
−10
10
VCC = 1.2 V
10
VCC = 1.2 V
f = 1 kHz
Distortion (%)
Output (dBV)
−20
−30
1
1
0.1
−40
0.1
Output voltage
−50
10
100
1k
10k
0.01
−60
100k
−50
Frequency (Hz)
0.01
4. Headphone amp.
Input  Distortion/output voltage
00
VCC = 1.2 V
f = 1 kHz
RL = 32 Ω
Low boost off
10
Distortion
0.1
0.1
Output (dBV)
1
1
Output voltage (V)
−10
Distortion (%)
−40
Input amplitude (dBV)
3. Distortion and amplitude characteristics of headphone amp.
10
Distortion
Output voltage (V)
1. Pre-amp. output frequency characteristics
Output  Input
VCC = 1.2 V
f = 100 Hz
Low boost on
32 Ω end
DETC = 0.047 µF
−20
−30
Outpu voltage
−20
−50
−40
−30
−40
−70
0.01
−20
−60
−50
−40
−30
Input amplitude (dBV)
Input amplitude (dBV)
5. Headphone amp.
Output  Frequency
6. Distortion and amplitude at headphone amp. output
Input  Distortion/output voltage
10
PWR system
VCC = 1.2 V
PL = 32 Ω
Low boost on
10
VCC = 1.2 V
f = 100 Hz
RL = 32 Ω
Low boost on
Distortion (%)
Output (dBV)
Distortion
−30
−40
−50
10
1
1
Output voltage
0.1
100
1k
10k
0.01
−60
100k
Frequency (Hz)
−50
−40
0.1
−30
Output voltage (V)
0.01
−60
0.01
−20
Input amplitude (dBV)
SDC00029BEB
9
AN7504SB
■ Application Notes (continued)
2. Main characteristics (continued)
8. Ripple filter output voltage (Using at 15 mA of current)
2.5
2.5
2.0
2.0
V7 (V)
V7 (V)
7. Ripple filter output voltage (pin 7)
1.5
1.5
1.0
1.0
0.5
0.5
1.5
1.0
2.0
0.5
0.5
2.5
1.5
1.0
2.0
2.5
V11 (V)
V11 (V)
9. VCC  VREF
10. Pin 2 (VREF) at standby on/off and voltage at
pin 7 (Ripple filter)
1.2
1.0
V7 (V)
VREF (V)
1.0
0.5
0.5
STBY on
0
0
1.0
2.0
0
2.5
1.0
V13 (V)
11. Headphone amp. at mute on/off
(Pin 9) output voltage
12. VCC  I total
1.2
5
1.0
4
0.5
Mute on
0
0
0.5
3
2
1
Mute off
0
1.0
0
V13 (V)
10
0.5
VCC (V)
I total (mA)
Headphone amp. output voltage V9 (V)
0
0.5
1
1.5
V11 (V)
SDC00029BEB
2
2.5
SDC00029BEB
PWR mute on
Head-phone out (R)
VCCP
GND
C11 100 µF
C10 47 µF
C9 0.1 µF
STBY on
14
13
12
11
10
15
16
17
18
19
20
Ripple filter
C13 1 µF
R6 50 kΩ Off
C14 6.8 µF
C15 0.15 µF
C16 6.8 µF
C17 1 µF
C18 0.1 µF
On
2.2 kΩ
R9
VCC1
PWR
mute off
220 kΩ REV
FWD
Pre-mute
R5
R4 2.2 Ω C12 0.1 µF
2.2 Ω
R3
9
C19 1 µF
C20 0.022 µF
R7 2.7 kΩ
C21 0.022 µF
R8 2.7 kΩ
C22 1 µF
C23 0.022 µF
R11 6.8 kΩ
R12
C24 33 µF 180 Ω
C25 1 µF
C26 0.022 µF
R13 6.8 kΩ
C27
R14
33 µF 180 Ω
Head-phone in (R)
Head-phone in (L)
Tape-select
Pre-out (L)
Pre-out (R)
Tape-select on : Open
Tape-select off: Low
C8 100 µF
21
22
23
24
25
26
27
28
1. Application circuit example
Head-phone out (L)
TR*
8
FWD/REV
Pre-mute
C7 0.47 µF
7
6
5
4
Bias
C6 22 µF
C5 33 µF
C4 2.2 µF
C3 1 µF
3
VREF 2
R2 2.2 kΩ
C2 22 µF
1
2.2 kΩ
VRPF
Pre-in (L)
Pre-in (R)
C1 1 µF
R1 2.2 kΩ
AN7504SB
■ Application Circuit Examples
R10
Base
boost
AGC
Control
REV
: Low
FWD : Open
Pre mute: High
STBY on
: Low1
PWR mute on : Low2
PWR mute off: Open
Note) *: The low VCE(SAT) PNP TR be used as TR.
11
AN7504SB
■ Application Circuit Examples (continued)
2. Evaluation board
Pre out R-ch.
Pre out L-ch.
Head-phone
In R-ch.
Head-phone
In L-ch.
R10
R14
C26
C23
R12
R7
R9
R8
14
1
C2
28
AN7504SB
C1
C3
C5
C7
Pre-amp. in R-ch.
Head-phone
Out R-ch.
R3
C9
Head-phone
Out L-ch.
R4
C12
R5
Pre-amp. in L-ch.
C4
C6
C8
C11
TR
R1
R2
C10
On
Pre-amp.
REV
FWD
Mute
■ New Package Dimensions (Unit: mm)
• SSOP028-P-0375E (Lead-free package)
11.60±0.20
28
15
+0.10
0.20-0.05
7.20±0.20
9.30±0.30
(1.05)
0° to 10°
0.80
Seating plane
12
14
0.30+0.10
-0.05
0.10±0.10
1
(0.60)
2.05±0.20
(0.40)
SDC00029BEB
Seating plane
C27
C21
C20
15
R13
C25
C24
R11
C22
C19
C18
C13
On
STBY
Mute off
Mute
Head-phone
C17
R6
Off
Tape-select
Off
VCC
Off
C16
C15
C14
Base boost
On
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR