Composite Transistors XN4608 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Collector current IC – 0.5 A Peak collector current ICP –1 A Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature +0.1 +0.1 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Absolute Maximum Ratings (Ta=25˚C) Ratings Tr2 0.16–0.06 0.4±0.2 Symbol Tr1 3 0.1 to 0.3 2SD601A+2SB970 Parameter 0.95 +0.1 ■ 4 0 to 0.05 ● 2 0.95 +0.2 ■ Basic Part Number of Element 5 0.8 2.9 –0.05 +0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 1.9±0.1 ■ Features 1.45±0.1 0.65±0.15 1 6 0.5 –0.05 1.5 –0.05 0.3 –0.05 0.65±0.15 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5E Internal Connection 6 Tr1 2 5 4 1 Tr2 3 1 Composite Transistors XN4608 ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Collector to base voltage Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current ● 160 460 0.3 V Tr2 Parameter Symbol Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –15 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current ICBO VCB = –10V, IE = 0 hFE1 VCE = –2V, IC = –0.5A* 100 60 Collector to base voltage Forward current transfer ratio – 0.1 µA 350 hFE2 VCE = –2V, IC = –1A* Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8mA – 0.16 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8mA – 0.8 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 pF V V * Pulse measurement Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) 2 Composite Transistors XN4608 Characteristics charts of Tr1 IC — VCE IB — VBE 60 Ta=25˚C VCE=10V VCE=10V Ta=25˚C IB=160µA 50 200 40 120µA 100µA 30 80µA 20 60µA 40µA 10 Collector current IC (mA) 1000 140µA Base current IB (µA) Collector current IC (mA) IC — VBE 240 1200 800 600 400 160 25˚C 120 Ta=75˚C –25˚C 80 40 200 20µA 0 0 0 2 4 6 8 10 0 Collector to emitter voltage VCE (V) 0.2 IC — IB Collector to emitter saturation voltage VCE(sat) (V) 200 160 120 80 40 0 0 200 400 600 0.8 0 1.0 0.4 800 10 3 1 0.3 25˚C Ta=75˚C 0.01 0.1 1000 –25˚C Base current IB (µA) 0.3 1 3 10 30 100 Collector current IC (mA) fT — IE 1.6 2.0 hFE — IC 30 0.03 1.2 600 IC/IB=10 0.1 0.8 Base to emitter voltage VBE (V) VCE(sat) — IC 100 VCE=10V Ta=25˚C Collector current IC (mA) 0.6 Base to emitter voltage VBE (V) 240 VCE=10V 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) NV — IC 240 300 VCB=10V Ta=25˚C 240 Noise voltage NV (mV) Transition frequency fT (MHz) 0.4 Forward current transfer ratio hFE 0 180 120 60 VCE=10V GV=80dB Function=FLAT 200 Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (µA) 3 Composite Transistors XN4608 Characteristics charts of Tr2 VBE(sat) — IC –100 IC/IB=50 IB=–10mA –0.8 –5mA –0.6 –4mA –3mA –0.4 –2mA –0.2 –1mA 0 0 –1 –2 –3 –4 –5 –6 –30 –10 –3 25˚C Ta=–25˚C –1 75˚C –0.3 –0.1 –0.03 –0.01 –0.01 –0.03 –0.1 –0.3 –1 hFE — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 500 Ta=75˚C 25˚C 300 –25˚C 200 100 Ta=75˚C –0.3 25˚C –25˚C –0.1 –0.03 –0.01 –0.01 –0.03 –0.1 –0.3 –10 160 120 80 40 2 3 5 10 –3 –10 80 VCB=–10V Ta=25˚C 1 –1 Collector current IC (A) 0 –3 Collector current IC (A) 4 –1 Cob — VCB VCE=–2V –1 –3 fT — I E 200 600 0 –0.01 –0.03 –0.1 –0.3 –10 –10 Collector current IC (A) Collector to emitter voltage VCE (V) 400 –3 IC/IB=50 –30 Collector output capacitance Cob (pF) Collector current IC (A) –9mA –8mA –7mA –6mA Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C –1.0 VCE(sat) — IC –100 Collector to emitter saturation voltage VCE(sat) (V) IC — VCE –1.2 20 30 50 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25˚C 70 60 50 40 30 20 10 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to base voltage VCB (V)