ROHM FTZ56E

FTZ5.6E
Diodes
Zener diode
FTZ5.6E
!External dimensions (Units: mm)
!Applications
Constant voltage control
Noise suppression on signal line
2.9±0.2
1.1 +0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
!Features
1) Small surface mounting type.(SMD5)
2) Multiple diodes with common anode configuration.
3) High reliability.
2.8±0.2
D6E
1.6 +0.2
−0.1
0.3~0.6
0~0.1
0.3 +0.1
−0.05
+0.1
0.15 −0.06
(All leads have the same dimensions.)
!Construction
Silicon epitaxial planar
ROHM : SMD5
EIAJ : SC-74A
JEDEC : −
!Circuit
!Absolute maximum ratings (Ta = 25°C)
Parameter
Power dissipation∗
Symbol
Limits
Unit
P
200
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
-55~+125
˚C
∗ Total of 4 elements
!Electrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
VZ
5.31
−
5.92
V
IZ = 5mA
Reverse current
IR
−
−
1
µA
VR = 2.5V
Operating resistance
Zz
−
−
60
Ω
IZ = 5mA
Rising operating resistance
ZZK
−
−
200
Ω
IZ = 0.5mA
Parameter
Zener voltage
Conditions
FTZ5.6E
Diodes
!Others
Item
Standard 1
IEC - 1000 - 4 - 2
Device configuration
Charge/discharge capacitance : 200 pF ± 10%
Discharge resistance
: 400 Ω ± 10%
Charge/discharge capacitance : 150 pF
Discharge resistance
: 330 Ω
Judgment contents
5 repetitions
No spark or smoke emitted
No element destruction
No malfunction
10 repetitions
No malfunction
Contact
: ± 8 kV
Suspended
: ± 15 kV
: ± 25 kV
: ± 20 kV
: ± 8 kV
!Electrical characteristic curve (Ta = 25°C)
100m
POWER DISSIPATION : Pd (mW)
300
ZENER CURRENT : IZ (A)
10m
1m
100µ
10µ
1µ
100n
0
1
2
3
4
5
ZENER VOLTAGE : VZ (V)
Fig.1 Zener characteristics
6
200
100
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (˚C)
Fig.2 Derating curve
200