UMZ8.2T Diodes Zener diode UMZ8.2T !External dimensions (Units : mm) 2.0±0.2 0.9±0.1 1.3±0.1 6R 0.3±0.1 2.1±0.1 0.65 1.25±0.1 0.65 !Features 1) Small surface mounting type. (UMD3) 2) Multiple diodes with common cathode configuration. 3) High reliability. 0.3 0~0.1 0.15±0.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Circuit !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Power dissipation∗ P 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ Total of 2 elements. !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage VZ 7.76 − 8.64 V IZ=5mA Reverse current IR − − 0.50 µA VR=5V Operating resistance ZZ − − 30 Ω IZ=5mA Rising operating resistance ZZK − − 60 Ω IZ=0.5mA 0.6 0.1Min. !Applications Constant voltage control Noise suppression on signal line UMZ8.2T Diodes !Electrical characteristic curves (Ta = 25°C) 100 10m 1m 100µ 10µ 1µ 100n 0 2 4 6 8 10 12 14 ZENER VOLTAGE : VZ (V) Fig. 1 Zener voltage characteristics 300 POWER DISSIPATION : Pd (mW) DYNAMIC IMPEADANCE : ZZ (Ω) ZENER CURRENT : IZ (mA) 100m Ta=25°C 10 1 0.1 1 10 ZENER CURRENT : IZ (mA) Fig. 2 Operating resistance Zener current characteristics 200 100 0 0 25 50 100 AMBIENT TEMPERATURE : Ta (°C) Fig. 3 Derating curve 150