UMZ8.2N Diodes Zener diode UMZ8.2N zApplications Constant voltage control Noise suppression on signal line zExternal dimensions (Units : mm) 2.0±0.2 0.9±0.1 1.3±0.1 0.3 0.6 0.65 0.65 zFeatures 1) Small surface mounting type. (UMD3) 2) Multiple diodes with common anode configuration. 3) High reliability. 2.1±0.1 1.25±0.1 0.1Min. 0~0.1 0.15±0.05 6A 0.3±0.1 (All leads have the same dimensions) ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 zConstruction Silicon epitaxial planar zCircuit zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Power dissipation P 200 mW Junction temperature Tj 150 °C Storage temperature Tstg ∗ −55~+150 °C ∗ Total of 2 elements zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Max. Unit VZ 7.76 8.64 V IZ=5mA Reverse current IR − 0.50 µA VR=5V Operating resistance ZZ − 30 Ω IZ=5mA Rising operating resistance ZZK − 60 Ω IZ=0.5mA Zener voltage Conditions UMZ8.2N Diodes zElectrical characteristic curves (Ta = 25°C) 0.01 0 8.0 9.0 10.0 ZENER VOLTAGE : VZ (V) POWER DISSIPATION : Pd (mW) 300 200 100 25 50 100 Fig.4 Derating curve 1 0.1 1 10 ZENER CURRENT : IZ (mA) Fig.1 Zener voltage characteristics AMBIENT TEMPERATURE : Ta (°C) 10 150 Fig.2 Operating resistance Zener current characteristics 1 0.1 Ta= −25 °C Ta= 25° C Ta= 75°C T a= 125° C 0.1 FORWARD CURRENT : IF (mA) DYNAMIC IMPEADANCE : ZZ (Ω) Ta=75°C Ta=125°C 1 0 0 10 100 Ta=−25°C Ta=25°C ZENER CURRENT : IZ (mA) 10 0.01 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE : VF (V) Fig.3 Forward characteristics 1.0