Series ICs for use with 3rd Overtone Crystal Oscillators ◆CMOS ■Applications ◆Oscillation Frequency : 125MHz (max) ●Crystal Oscillation Modules ◆3-State Output ●Computer, DSP Clocks ◆Built-in Oscillation Capacitor ◆Built-in Oscillation Feedback Resistor ●Communication Equipment ●Various System Clocks ◆Mini Mold SOT-26 Package ■General Description ■Features The XC2163 series are high frequency, low current consumption CMOS ICs with built-in crystal oscillator and divider circuits. Output is selectable from any one of the following values for f0 : f0/1, f0/2, f0/4, f0/8. With oscillation capacitors and a feedback resistors built-in, it is possible to configure a stable 3rd overtone oscillator using only an external crystal oscillator. Also available is an external oscillation capacitor/external oscillation feedback resistor type which makes oscillation frequency control possible. Oscillation Frequency : 40MHz ~ 125MHz (Rf, Cg, Cd internal ; 5.0V) (3rd Overtone) : 57MHz ~ 125MHz (Rf, Cg, Cd internal ; 3.3V) : 20MHz ~ 125MHz (Rf, Cg, Cd external) Divider Ratio : Selectable from f0/1, f0/2, f0/4, f0/8. Output : 3-State Operating Voltage Range : 3.3V ±10%, 5.0V ±10% Low Current Consumption : Stand-by function included * Ultra Small Package : SOT-26 mini mold * oscillation continues in stand-by mode ■Pin Configuration /INH XT VSS 1 ６ /XT ２ ５ VDD ■Pin Assignment PIN PIN NAME NUMBER 1 /INH FUNCTION Stand-by control* 2 XT 3 VSS GND 4 Qo Clock Output SOT-26 5 VDD Power Supply ( TOP VIEW ) 6 /XT Crystal Oscillator Connection (Output) ３ ４ QO Crystal Oscillator Connection (Input) * Stand-by control pin has pull-up resistance built-in. ■/INH, Q0 Pin Function /INH "H" "L" OPEN Q0 Divider Output High Impedance Divider Output 14 "H" = High Level "L" = Low Level 1031 XC2163 Series ■Product Classification ●Ordering Information XC2163 qwerty DESIGNATOR DESCRIPTION DESIGNATOR DESCRIPTION ① Ratio Divider : C = f0/1 E = f0/4 D = f0/2 F = f0/8 ④ Recommended Frequency Range & Rf, Cg, Cd values External Type:Z(refer to table 1) Built-in Type:(To Be Determined) ② Output Capacity : 5 = 10TTL ⑤ Package : M = SOT-26 ⑥ Device Orientation : R = Embossed Tape (Standerd Feed) L= Embossed Tape (Reverse Feed) ③ Duty Level : 1 = CMOS (VDD/2) Note : TTL : 20MHz to 37MHz Table 1: Frequency for External Type SYMBOL Ｚ 3.3V TYPE 5.0V TYPE Frequency Range Ｒｆ Ｃｇ/Ｃｄ Frequency Range Ｒｆ Ｃｇ/Ｃｄ １０８ＭＨｚ∼１２５ＭＨｚ １． ６ｋΩ １０ｐＦ １０８ＭＨｚ∼１２５ＭＨｚ ３． ９ｋΩ ４ｐＦ ９３ＭＨｚ∼１１０ＭＨｚ ２． ４ｋΩ １０ｐＦ ９５ＭＨｚ∼１１０ＭＨｚ ２． ４ｋΩ ７ｐＦ ８０ＭＨｚ∼９５ＭＨｚ ２． ４ｋΩ １２ｐＦ ８０ＭＨｚ∼９７ＭＨｚ ２． ７ｋΩ ８ｐＦ ６８ＭＨｚ∼８３ＭＨｚ ２． ４ｋΩ １５ｐＦ ６８ＭＨｚ∼８３ＭＨｚ ２． ７ｋΩ １０ｐＦ ５５ＭＨｚ∼７０ＭＨｚ ３． ３ｋΩ １５ｐＦ ５８ＭＨｚ∼７０ＭＨｚ ３． ９ｋΩ １０ｐＦ ４５ＭＨｚ∼５７ＭＨｚ ３． ３ｋΩ ２０ｐＦ ５０ＭＨｚ∼６０ＭＨｚ ３． ９ｋΩ １２ｐＦ ３５ＭＨｚ∼４７ＭＨｚ ３． ６ｋΩ ２４ｐＦ ４０ＭＨｚ∼５２ＭＨｚ ２． ４ｋΩ ２０ｐＦ ２８ＭＨｚ∼３７ＭＨｚ ４． ７ｋΩ ２７ｐＦ ３３ＭＨｚ∼４２ＭＨｚ ３． ６ｋΩ ２０ｐＦ ２４ＭＨｚ∼３０ＭＨｚ ５． ６ｋΩ ３０ｐＦ ２８ＭＨｚ∼３５ＭＨｚ ３． ６ｋΩ ２４ｐＦ ２０ＭＨｚ∼２６ＭＨｚ ー ６． ８ｋΩ ３３ｐＦ ２４ＭＨｚ∼３０ＭＨｚ ３． ９ｋΩ ２７ｐＦ ー ー ２０ＭＨｚ∼２６ＭＨｚ ３． ９ｋΩ ３３ｐＦ Note : We recommend that a damping resistor Rd be added between the /XT pin & the crystal oscillator pin in order to safeguard the crystal oscillator and improve oscillation stability. Table 2: Frequency for Internal Type SYMBOL 14 1032 3.3V TYPE 5.0V TYPE Frequency Range Ｒｆ Ｃｇ/Ｃｄ Frequency Range Ｒｆ A - - - 108MHz ∼ 125MHz 1.5kΩ 5.5pF B - - - 93MHz ∼ 110MHz 1.7kΩ 6.5pF C 108MHz ∼ 125MHz 2.2KΩ 5.5pF 80MHz ∼ 95MHz 2.2kΩ 5.5pF D 95MHz ∼ 110MHz 2.4KΩ 6.5pF 72MHz ∼ 83MHz 2.4kΩ 6.5pF E 80MHz ∼ 97MHz 3.2KΩ 6.5pF 65MHz ∼ 75MHz 3.2kΩ 6.5pF F 68MHz ∼ 83MHz 3.7KΩ 6.5pF 57MHz ∼ 67MHz 3.7kΩ 6.5pF H 55MHz ∼ 70MHz 4.9KΩ 7.6pF - - - K 45MHz ∼ 57MHz 5.5KΩ 11pF - - - L 40MHz ∼ 48MHz 6.5KΩ 11pF - - - Ｃｇ/Ｃｄ XC2163 Series ■Packaging Information ●SOT-26 +0.1 0.15 -0.05 +0.1 0.4 -0.05 （0.5） +0.2 -0.1 0.4 0.2min 1.6 2.8±0.2 0∼0.1 +0.1 -0.05 （0.95） 1.1±0.1 1.9±0.2 2.9±0.2 ■Marking q Represents the Series name ６ ５ q w e r MARK w Represents the Divider Ratio MARK Ｃ Ｄ ３ ２ 1 e Represents Frequency & Rf, Cg & Cd Values MARK 6 ４ SOT-26 (TOP VIEW) RATIO ｆｏ/１ ｆｏ/２ MARK Ｅ Ｆ RATIO ｆｏ/４ ｆｏ/８ – 108~125 B – 93~110 C 108~125 80~95 D 95~110 72~83 E 80~97 65~75 F 68~83 57~67 H 55~70 – K 45~57 – L 40~48 – Z VDD Rf External r Represents the Assembly Lot No. (based on internal standards) QO Cg A ■Block Diagram Rup Frequency (MHz) 5.0V 3.3V Cd ■Absolute Maximum Ratings XT 1/2 1/2 1/2 /XT VSS /INH PARAMETER SYMBOL CONDITIONS UNITS Supply Voltage VDD VSS-0.3∼VSS+7.0 V Input Voltage VIN VSS-0.3∼VDD+0.3 V Continuous Total Power Dissipation Pd 250 * mW Operating Ambient Temp. Topr -30∼+80 ℃ Storage Temp. Tstg -55∼+125 ℃ q Built -in oscillation capacitors, oscillation feedback resistor VDD QO Rup XT /XT 1/2 1/2 1/2 VSS /INH 14 * when implemented on a glass epoxy PCB w External oscillation capacitors, oscillation feedback resistor 1033 XC2163 Series ■Electrical Characteristics XC2163C51AMR:（Unless specified, VDD=3.3V, Ta=25℃） fosc=108MHz∼125MHz PARAMETER SYMBOL Operating Voltage VDD 'H' Level Input Voltage VIH CONDITIONS Standard value MIN TYP MAX 2.97 /INH pin 3.63 2.4 UNITS V V 'L' Level Input Voltage VIL /INH pin 'H' Level Output Voltage VOH Qo pin, VDD = 2.97V, IOH = -8mA 'L' Level Output Voltage VOL Qo pin, VDD = 2.97V, IOL = 8mA 0.3 Consumption Current 1 IDD1 /INH = OPEN, CL = 15pF, f = 125MHz 18 mA Consumption Current 2 IDD2 /INH = 'L', f = 125MHz 5 μA Input pull up resistance 1 Rup1 /INH = 'L' 1.0 2.0 4.0 MΩ Input pull up resistance 2 Rup2 /INH = 0.7VDD 35 70 140 kΩ Cg Measured Value 5.5 pF Cd Measured Value 5.5 pF Internal oscillation capacity Internal oscillation feedback resistance Rf Output Off Leak Current IOZ 2.2 0.4 V 0.4 V 2.4 V 1.5 MΩ Qo pin, /INH = 'L' 10 μA note) measured value XC2163C51BMR: （Unless specified, VDD=3.3V, No load, Ta=25℃） fosc=93MHz∼110MHz PARAMETER SYMBOL CONDITIONS Operating Voltage VDD 'H' Level Input Voltage VIH /INH pin Standard value MIN TYP 2.97 MAX 3.63 2.4 V V 'L' Level Input Voltage VIL /INH pin 'H' Level Output Voltage VOH Qo pin, VDD = 2.97V, IOH = -8mA 'L' Level Output Voltage VOL Qo pin, VDD = 2.97V, IOL = 8mA 0.3 Consumption Current 1 IDD1 /INH = OPEN, CL = 15pF, f = 110MHz 15 0.4 2.2 UNITS 2.4 V V 0.4 V mA Consumption Current 2 IDD2 /INH = 'L', f = 110MHz Input pull up resistance 1 Rup1 /INH = 'L' 1.0 Input pull up resistance 2 Rup2 /INH = 0.7VDD 35 Cg Measured Value 6.5 Cd Measured Value 6.5 pF 1.7 MΩ Internal oscillation capacity Internal oscillation feedback resistance Rf Output Off Leak Current IOZ 5 μA 2.0 4.0 MΩ 70 140 kΩ Qo pin, /INH = 'L' pF 10 μA TYP MAX ■Switching Characteristics XC2163C51AMR/XC2163C51BMR CMOS DUTY: VDD=3.3V, Ta=25℃ 14 1034 PARAMETER SYMBOL Output Rise Time tr CL=15pF, 0.1VDD→0.9VDD CONDITIONS 1.5 Output Fall Time tf CL=15pF, 0.9VDD→0.1VDD 1.5 Output DUTY Cycle DUTY Output Disable (Delay Time) tplz C51A 0.5VDD, CL=15pF, f=125MHz C51B 0.5VDD, CL=15pF, f=110MHz CL=15pF MIN 45 55 100 XC2163 Series ■Electrical Characteristics XC2163C51ZMR:（Unless specified, VDD=5.0V, Ta=25℃） fosc = 108MHz to 125MHz ; Rf = 1.6kΩ ; Cg = Cd = 10pF external PARAMETER SYMBOL Operating Voltage VDD 'H' Level Input Voltage VIH CONDITIONS Standard value MIN TYP 4.5 /INH pin 'L' Level Input Voltage VIL /INH pin 'H' Level Output Voltage VOH Qo pin, VDD = 4.5V, IOH = -16mA MAX 5.5 2.4 V V 0.4 3.9 UNITS 4.2 V V 'L' Level Output Voltage VOL Qo pin, VDD = 4.5V, IOL = 16mA 0.3 Consumption Current 1 IDD1 /INH = OPEN, CL = 15pF, f = 120MHz 31 mA Consumption Current 2 IDD2 /INH = 'L', f = 120MHz 14 mA Input pull up resistance 1 Rup1 /INH = 'L' 0.5 1.0 2.0 MΩ Input pull up resistance 2 Rup2 /INH = 0.7VDD 25 50 100 kΩ Output Off Leak Current IOZ Qo pin, /INH = 'L' 10 μA 0.4 V ■Switching Characteristics CMOS DUTY : VDD=5.0V, Ta=25℃ PARAMETER Standard value SYMBOL CONDITIONS Output Rise Time tr CL=15pF, 0.1VDD→0.9VDD 1.5 ns Output Fall Time 1.5 ns tf CL=15pF, 0.9VDD→0.1VDD Output DUTY Cycle DUTY 0.5VDD, CL=15pF, f=120MHz Output Disable (Delay Time) tplz Output Enable (Delay Time) tpzl MIN 45 TYP MAX UNITS 55 % CL=15pF 100 ns CL=15pF 100 ns This data sheet is preliminary therefore, the contents can be changed without advance notice. 14 1035 XC2163 Series ■Electrical Characteristics XC2163C51ZMR:（Unless specified, VDD=3.3V, Ta=25℃） fosc = 108MHz to 125MHz : Rf = 3.9kΩ, Cg = Cd = 4pF external PARAMETER SYMBOL Operating Voltage VDD 'H' Level Input Voltage VIH CONDITIONS Standard value MIN TYP 2.97 /INH pin MAX 3.63 2.4 UNITS V V 'L' Level Input Voltage VIL /INH pin 'H' Level Output Voltage VOH QO pin, VDD=2.97V, IOH=-8mA 'L' Level Output Voltage VOL QO pin, VDD=2.97V, IOL=8mA 0.3 Consumption Current 1 IDD1 /INH=OPEN, CL=15pF, f=120MHz 15 mA Consumption Current 2 IDD2 /INH="L", f=100MHz 4 mA Input pull up resistance 1 Rup1 /INH="L" 2.0 4.0 6.0 MΩ Input pull up resistance 2 Rup2 /INH=0.7VDD 70 140 250 kΩ Output Off Leak Current IOZ QO pin, /INH="L" 10 μA 0.4 2.2 2.4 V V 0.4 V ■Switching Characteristics CMOS DUTY : VDD=3.3V, Ta=25℃ PARAMETER SYMBOL CONDITIONS MIN Standard value TYP MAX UNITS Output Rise Time tr CL=15pF, 0.1VDD ~ 0.9VDD 1.5 ns Output Fall Time tf CL=15pF, 0.9VDD ~ 0.1VDD 1.5 ns Output DUTY Cycle DUTY 0.5VDD, CL=15pF, f=120MHz Output Disable (Delay Time) tplz Output Enable (Delay Time) tpzl 45 55 % CL=15pF 100 ns CL=15pF 100 ns This data sheet is preliminary therefore, the contents can be changed without advance notice. 14 1036 XC2163 Series ■Switching Characteristic Measurement Waveforms (1) Switching Time CMOS Output 0.9VDD 0.9VDD VDD/2 DUTY Measured Level 0.1VDD 0.1VDD Qo Output TW tr tf (2) Output Waveform Symmetry VDD/2 DUTY Measured Level Qo Output TW T DUTY ＝ TW × 100 (%) T 14 1037 XC2163 Series (3) Output Disable (Delay Time), Output Enable (Delay Time) *) /INH Pin Input Waveform tr = tf = less than 10ns /INH Input VIH VIL tplz tpzl ( Hi-Z ) Ｑ0 Output 14 1038