T820-xxxW T830-xxxW ® SNUBBERLESS TRIAC FEATURES ■ ■ ■ ■ ■ ITRMS = 8 A VDRM = VRRM = 600V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 A2 A1 G DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. G A1 A2 ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Parameter Value Unit Tc= 95°C 8 A tp = 16.7 ms (1 cycle, 60 Hz) 88 A tp = 10 ms (1/2 cycle, 50 Hz) 100 I2t Value (half-cycle, 50 Hz) tp = 10 ms 50 A2s Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Symbol VDRM VRRM September 2001 - Ed: 1A °C 260 °C T820 / T830-xxxW Parameter Repetitive peak off-state voltage Tj = 125°C - 40 to + 150 - 40 to + 125 Unit 600 700 800 600 700 800 V 1/5 T820-xxxW / T830-xxxW THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360° conduction angle) 3.1 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33Ω Quadrant Tj= 25°C I-II-III MAX T820 T830 Unit 20 30 mA VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V tgt VD=VDRM IG =500mA dlG/dt= 3Aµs Tj= 25°C I-II-III TYP 2 µs IH * IT= 100mA Tj= 25°C MAX Gate open 35 50 VTM * ITM= 11A tp= 380µs Tj= 25°C MAX 1.5 V IDRM IRRM VDRM rated VRRM rated Tj= 25°C MAX 10 µA Tj= 125°C MAX 2 mA dV/dt * Linear slope up to Gate open VD=67%VDRM Tj= 125°C MIN 200 300 V/µs (dV/dt)c * (dI/dt)c = 4.5 A/ms (see note) Tj= 125°C MIN 10 20 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T820W / T830W triacs. 2/5 T820-xxxW / T830-xxxW Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 180 O = 180 8 = 120 = 90 6 = 60 4 Tcase (oC) P (W) P(W) 10 = 30 10 o -90 -95 o 8 -100 o 6 Rth = 0 o C/W o 2.5 C/W o 5 C/W 7.5 o C/W o 4 o -105 -110 -115 2 2 0 0 1 2 3 4 5 6 7 Tamb ( C) 8 Fig. 3: RMS on-state current versus case temperature. I T(RMS) -120 o I T(RMS) (A) -125 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 4: Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth (A) 1 10 Zth(j-c) 8 = 180 o 0.1 6 Zth(j-a) 4 0.01 2 o Tcase( C) 0 0 10 20 30 40 50 60 tp(s) 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 100 2.6 o Tj initial = 25 C 2.4 80 2.2 2.0 Igt 1.8 1.6 1.4 60 40 Ih 1.2 1.0 20 0.8 0.6 0.4 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 T820-xxxW / T830-xxxW Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 1000 1000 o Tj initial = 25 C I TSM Tj initial o 25 C 100 100 I2 t 10 Tj max Tj max Vto =0.9V Rt =0.048 10 1 VTM (V) tp(ms) 1 1 4/5 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 T820-xxxW / T830-xxxW PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A ■ ■ ■ ■ Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 ■ Millimeters 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. 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