X04xxxF ® SENSITIVE GATE SCR FEATURES IT(RMS) = 4A VDRM = 400V to 800V Low IGT < 200µA DESCRIPTION K The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required, like small engine ignition, SMPS crowbar protection, food processor. AG TO202-3 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Value Unit Tc= 90°C 4 A Ta= 25°C 1.35 Tc= 90°C 2.5 Ta= 25°C 0.9 tp = 8.3 ms 33 tp = 10 ms 30 tp = 10 ms 4.5 A2s 50 A/µs - 40, + 150 - 40, + 125 °C 260 °C dI/dt Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 10 mA Tstg Tj Storage and operating junction temperature range Tl Maximum lead temperature for soldering during 10s at 4.5mm from case Symbol VDRM VRRM August 1998 Ed : 1A A Voltage Parameter Repetitive peak off-state voltage Tj = 125°C RGK = 1KΩ A Unit D M N 400 600 800 V 1/4 X04xxxF THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 100 °C/W Rth(j-c) Junction to case for DC 7.5 °C/W GATE CHARACTERISTICS PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 µs) IGM = 1.2 A max. (tp = 20 µs) VGD = 0.1Vmin. (VD=VDRM RL=3.3kΩ RGK = 1 KΩ Tj= 125°C) ELECTRICAL CHARACTERISTICS Symbol Sensitivity Test Conditions 02 IGT VD=12V (DC) RL=140Ω Tj= 25°C MIN MAX 200 05 20 20 200 50 µA VD=12V (DC) RL=140Ω Tj= 25°C MAX 0.8 V IRG =10µA Tj= 25°C MIN 8 V IH IT= 50mA RGK = 1 KΩ Tj= 25°C MAX 5 mA IL IG=1mA RGK = 1 KΩ Tj= 25°C MAX 6 mA VTM ITM= 8A tp= 380µs Tj= 25°C MAX 1.8 V IDRM IRRM VD = VDRM RGK = 1 KΩ VR = VRRM Tj= 25°C MAX 5 µA Tj= 110°C MAX 200 Tj= 110°C MIN VGT VRGM dV/dt VD=67%VDRM RGK = 1 KΩ 10 15 ORDERING INFORMATION X 04 03 CURRENT M F PACKAGE : F=TO202-3 SCR TOP GLASS 2/4 Unit 03 SENSITIVITY VOLTAGE 15 V/µs X04xxxF Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase). Tcase (oC) -85 P (W) P (W) 5 5 360 O 4 4 DC -95 Rth(j-c) 3 = 180 = 120 2 = 90 = 60 1 = 30 0 0 0.5 1 3 o -105 o 2 o o Rth(j-a) I T(AV)(A) 1.5 -115 1 o 2 2.5 3 3.5 o Tamb ( C) 4 Fig.3 : Average on-state current versus case temperature. I T(AV) (A) 0 0 20 40 60 80 100 -125 140 120 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 1 0.8 0.6 o 0.10 = 180 0.4 0.2 o tp(s) Tamb ( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 35 o 10.0 9.0 Tj initial = 25 C 30 8.0 25 7.0 20 6.0 Igt 5.0 15 4.0 10 3.0 2.0 0.01 1E-3 Ih 5 1.0 0.0 -40 Number of cycles Tj(oC) -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/4 X04xxxF Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A2 s) I TM (A) 100 100 Tj initial = 25oC I TSM Tj initial o 25 C Tj max 10 10 I2 t Tj max Vto =0.95V Rt =0.100 VTM (V) tp(ms) 1 1 1 0 10 0.5 1 1.5 2 2.5 3 3.5 4 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. A Millimeters Typ. A C O F D P H N1 N 7.3 0.287 D 10.5 0.413 E 7.4 0.290 1.5 0.059 H 0.51 0.020 J 1.5 0.059 M 4.5 0.177 N1 O P Max. 0.398 C N M Typ. 10.1 F J Max. Inches 5.3 2.54 0.209 0.100 1.4 0.055 0.7 0.028 Marking : type number Weight : 1 g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4