T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required. TO220 non-insulated (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter Value Unit RMS on-state current (360° conduction angle) Tc= 100 °C 6 A Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 8.3 ms 63 A tp = 10 ms 60 I2t Value for fusing tp = 10 ms 18 A2s Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 50 mA Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case °C 260 °C Voltage Parameter Repetitive peak off-state voltage Tj = 125°C - 40, + 150 - 40, + 125 Unit D M S N 400 600 700 800 V 1/5 T0605xH / T0609xH THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 °C/W Rth(j-c) Junction to case for D.C 4 °C/W Rth(j-c) Junction to case for A.C 360° conduction angle (F=50Hz) 3 °C/W Sensitivity Unit GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant 05 09 5 10 IGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III-IV MAX VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 40mA IT = 8.5A dIG/dt = 0.5A/µs Tj= 25°C I-II-III-IV TYP 2 µs IH * IT= 50mA Gate open Tj= 25°C IG= 1.2 IGT Tj= 25°C IL mA MAX 5 10 mA I-III-IV TYP 5 10 mA II TYP 10 20 VTM * ITM= 8.5A tp= 380µs Tj= 25°C MAX 1.65 V IDRM IRRM VD = VDRM VR = VRRM Tj= 25°C MAX 5 µA Tj= 110°C MAX 2 mA Tj= 110°C MIN dV/dt * (dV/dt)c * VD=67%VDRM Gate open (dI/dt)c = 2.7 A/ms Tj= 110°C TYP 10 TYP 1 20 V/µs 2 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T 06 09 M H PACKAGE : H = TO220 Non-insulated TRIAC MESA GLASS CURRENT SENSITIVITY 2/5 VOLTAGE T0605xH / T0609xH Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. 10 10 o 180 O o 8 = 120 = 90 6 = 60 = 30 Rth = 0 o C/W 2.5 o C/W 5 o C/W 10 o C/W = 180 8 4 o -100 -110 4 o -115 2 -120 I T(RMS) (A) 0 -95 -105 6 o 2 0 Tcase (o C) P (W) P(W) 1 2 3 4 o Tamb ( C) 5 6 Fig.3 : RMS on-state current versus case temperature. 0 0 20 40 60 80 100 -125 140 120 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth I T(RMS) (A) 1 7 6 Zt h( j-c) 5 4 0.1 o = 180 Zt h( j-a) 3 2 1 o tp (s) Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 60 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 1E-3 o Tj initial = 25 C 50 40 Igt 30 Ih 20 10 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 T0605xH / T0609xH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. 1000 Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A 2 s) I TM (A) 100 Tj initial = 25o C Tj initial o 25 C I TSM 100 Tj max 10 I2t Tj max Vto =0.93V Rt =0.078 10 1 1 VTM (V) t (ms) 10 4/5 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 T0605xH / T0609xH PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) REF. DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A A H B J G I L D P N1 M N 6.5 0.406 0.248 0.256 9.1 0.358 12.7 F G C F 6.3 C D B O 10.3 0.500 4.2 3.0 0.165 0.118 H I 4.5 3.53 4.7 3.66 0.177 0.185 0.139 0.144 J 1.2 1.3 0.047 0.051 0.9 0.035 L M 2.7 0.106 N N1 O P 5.3 2.54 0.209 0.100 1.2 1.4 1.15 0.047 0.055 0.045 Marking : type number Weight : 1.8 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5