Motion-SPM FNA41060 TM Smart Power Module Features General Description • 600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and refrigerator. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out protection, short-circuit protection, and temperature monitoring. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. • Easy PCB layout due to built-in bootstrap diode and VS output • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Built-in thermistor for over-temperature monitoring • Isolation rating of 2000Vrms/min. Applications Additional Information • AC 100V ~ 253V three-phase inverter drive for small power ac motor drives For further infomation, please see AN-9070 and FEB305-001 in http://www.fairchildsemi.com • Home appliances applications like air conditioner and refrigerator Figure 1. ©2010 Fairchild Semiconductor Corporation FNA41060 Rev. C 1 www.fairchildsemi.com FNA41060 Smart Power Module January 2010 FNA41060 Smart Power Module Integrated Power Functions • 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection • For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to UV (Low-side supply) and SC faults • Input interface: 3.3/5V CMOS compatible, Schmitt trigger input Pin Configuration Top View VB(U) (26) V TH(1) VS(U)(25) R TH(2) VB(V)(24) V S(V)(23) P(3) V B(W)(22) VS(W)(21) U(4) IN (UH) (20) Case Temperature (TC) Detecting Point IN(VH)(19) V(5) IN(WH)(18) VCC(H) (17) VCC(L)(16) W(6) COM(15) IN (UL)(14) IN (VL)(13) N U(7) IN (WL) (12) N V(8) VFO (11) NW(9) CSC(10) Figure 2. FNA41060 Rev. C 2 www.fairchildsemi.com FNA41060 Smart Power Module Pin Descriptions Pin Number Pin Name 1 V TH Pin Description Thermistor Bias Voltage 2 RTH 3 P Series Resistor for the Use of Thermistor (Temperature Detection) 4 U Output for U Phase 5 V Output for V Phase 6 W Output for W Phase 7 NU Negative DC–Link Input for U Phase Positive DC–Link Input 8 NV Negative DC–Link Input for V Phase 9 NW Negative DC–Link Input for W Phase 10 CSC Capacitor (Low-pass Filter) for Short-Current Detection Input 11 VFO Fault Output 12 IN(WL) Signal Input for Low-side W Phase 13 IN (VL) Signal Input for Low-side V Phase 14 IN(UL) Signal Input for Low-side U Phase 15 COM Common Supply Ground 16 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving 17 V CC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 18 IN(WH) Signal Input for High-side W Phase 19 IN (VH) Signal Input for High-side V Phase 20 IN(UH) Signal Input for High-side U Phase 21 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving 22 VB(W) High-side Bias Voltage for W Phase IGBT Driving 23 V S(V) High-side Bias Voltage Ground for V Phase IGBT Driving 24 V B(V) High-side Bias Voltage for V Phase IGBT Driving 25 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving 26 VB(U) High-side Bias Voltage for U Phase IGBT Driving FNA41060 Rev. C 3 www.fairchildsemi.com FNA41060 Smart Power Module Internal Equivalent Circuit and Input/Output Pins VTH (1) Thermister (26) VB(U) (25) VS(U) (24) VB(V) (23) VS(V) (22) VB(W) (21) VS(W) (20) IN(UH) (19) IN(VH) (18) IN(WH) (17) VCC(H) (16) VCC(L) (15) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO (10) CSC RTH (2) P (3) UVB UVS VVB OUT(UH) UVS U(4) VVS WVB WVS IN(UH) OUT(VH) VVS V (5) IN(VH) IN(WH) VCC OUT(WH) COM WVS W(6) VCC OUT(UL) COM NU (7) IN(UL) IN(VL) IN(WL) OUT(VL) NV (8) VFO C(SC) OUT(WL) NW (9) Note: 1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. 2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions. 3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. Figure 3. FNA41060 Rev. C 4 www.fairchildsemi.com Unless Otherwise Specified) Inverter Part Symbol VPN V PN(Surge) VCES Parameter Conditions Rating Units Supply Voltage Applied between P- NU, NV, NW 450 V Supply Voltage (Surge) Applied between P- NU, NV, NW 500 V 600 V Collector-emitter Voltage ± IC Each IGBT Collector Current TC = 25°C, TJ ＜ 150°C 10 A ± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse Width 20 A PC Collector Dissipation TC = 25°C per One Chip 34 W TJ Operating Junction Temperature (Note 1) -40 ~ 150 °C Rating Units Note: 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C. Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between V CC(H), VCC(L) - COM 20 V VBS High-side Control Bias Voltage Applied between V B(U) - VS(U), VB(V) - VS(V), VB(W) - V S(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), -0.3~VCC +0.3 IN(UL), IN(VL), IN(WL) - COM V VFO Fault Output Supply Voltage Applied between V FO - COM -0.3~VCC +0.3 V IFO Fault Output Current Sink Current at V FO Pin VSC Current Sensing Input Voltage Applied between C SC - COM 1 mA -0.3~VCC +0.3 V Rating Units 600 V 0.5 A Bootstrap Diode Part Symbol VRRM IF Parameter Conditions Maximum Repetitive Reverse Voltage Forward Current TC = 25°C IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width TJ Operating Junction Temperature 1 A -40 ~ 150 °C Rating Units 400 V Total System Symbol VPN(PROT) Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) TSTG Storage Temperature V ISO Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5V TJ = 150°C, Non-repetitive, less than 2ms 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate -40 ~ 125 °C 2000 Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Parameter Junction to Case Thermal Resistance Conditions Min. Typ. Max. Units Inverter IGBT part (per 1/6 module) - - 3.6 °C/W Inverter FWD part (per 1/6 module) - - 4.8 °C/W Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. FNA41060 Rev. C 5 www.fairchildsemi.com FNA41060 Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol Parameter VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V FWD Forward Voltage VIN = 0V Switching Times VPN = 300V, V CC = VBS = 15V, IC = 10A TJ = 25°C VIN = 0V « 5V, Inductive Load (Note 3) VF HS tON Conditions tC(ON) tOFF Min. Typ. IC = 10A, TJ = 25°C - 1.7 2.2 V IF = 10A, TJ = 25°C - 1.8 2.3 V 0.40 0.70 1.20 ms - 0.20 0.45 ms - 0.75 1.25 ms - 0.25 0.50 ms - 0.15 - ms 0.40 0.70 1.20 ms tC(OFF) trr LS tON VPN = 300V, V CC = VBS = 15V, IC = 10A TJ = 25°C VIN = 0V « 5V, Inductive Load (Note 3) Max. Units - 0.20 0.45 ms - 0.75 1.25 ms tC(OFF) - 0.25 0.50 ms trr - 0.15 - ms - - 1 mA tC(ON) tOFF ICES Collector-Emitter Leakage Current VCE = VCES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% IC 100% IC t rr V CE IC IC V IN V IN t ON 10% IC V IN(ON ) V CE tO FF tC(O N) 90% IC t C(OFF) V IN (OF F) 10% V C E 10% V C E 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition FNA41060 Rev. C 6 www.fairchildsemi.com FNA41060 Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) FNA41060 Smart Power Module Switching Loss (Typical) Inductive Load, VPN=300V, VCC=15V, TJ=25℃ IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 Inductive Load, VPN=300V, VCC=15V, TJ=150℃ 700 SWITCHING LOSS, ESW [uJ] SWITCHING LOSS, ESW [uJ] 700 500 400 300 200 100 0 11 IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec 600 0 1 COLLECTOR CURRENT, Ic [AMPERES] 2 3 4 5 6 7 8 9 10 11 COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics Control Part Symbol Parameter Min. Typ. IQCCH Quiescent V CC Supply Current VCC(H) = 15V, IN(UH,VH,WH) = 0V V CC(H) - COM - - 0.10 mA VCC(L) = 15V, IN (UL,VL, WL) = 0V V CC(L) - COM - - 2.65 mA Operating VCC Supply Current VCC(H) = 15V, fPWM = 20kHz, V CC(H) - COM duty=50%, applied to one PWM signal input for High-side - - 0.15 mA VCC(L) = 15V, fPWM = 20kHz, V CC(L) - COM duty=50%, applied to one PWM signal input for Low-side - - 3.65 mA IQCCL IPCCH IPCCL Conditions Max. Units IQBS Quiescent V BS Supply Current VBS = 15V, IN(UH, VH, WH) = 0V V B(U) - VS(U), VB(V) V S(V), V B(W) - VS(W) - - 0.30 mA IPBS Operating VBS Supply Current VCC = V BS = 15V, fPWM = 20kHz, V B(U) - VS(U), VB(V) duty=50%, applied to one PWM V S(V), V B(W) - VS(W) signal input for High-side - - 2.00 mA VFOH Fault Output Voltage VSC = 0V, V FO Circuit: 4.7kW to 5V Pull-up 4.5 - - V VSC = 1V, V FO Circuit: 4.7kW to 5V Pull-up - - 0.5 V VCC = 15V (Note 4) 0.45 0.5 0.55 V Detection Level 10.5 - 13.0 V VFOL VSC(ref) UVCCD UVCCR UV BSD Short Circuit Trip Level Supply Circuit Under-Voltage Protection UV BSR tFOD Fault-out Pulse Width VIN(ON) ON Threshold Voltage VIN(OFF) OFF Threshold Voltage RTH Resistance of Thermister Reset Level 11.0 - 13.5 V Detection Level 10.0 - 12.5 V Reset Level 10.5 - 13.0 V 30 - - ms - - 2.6 V 0.8 - - V Applied between IN(UH), IN (VH), IN (WH), IN(UL), IN(VL), IN(WL) - COM @TTH =25°C, (Note 5) - 47 - kW @TTH =100°C - 2.9 - kW Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application. FNA41060 Rev. C 7 www.fairchildsemi.com 550 R-T Curve in 50℃ ~ 125℃ 500 20 450 16 Resistance[kW] Resistance[kW] FNA41060 Smart Power Module R-T Curve 600 400 350 300 250 200 12 8 4 0 50 60 70 150 80 90 100 110 120 Temperature [℃ ] 100 50 0 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Temperature TTH[℃ ] Figure. 6. R-T Curve of The Built-in Thermistor Bootstrap Diode Part Symbol Parameter Conditions Min. Typ. Max. Units VF Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V trr Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns Built in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TC=25℃ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Note: 6. Built in bootstrap diode includes around 15 Ω resistance characteristic. Figure 7. Built in Bootstrap Diode Characteristic FNA41060 Rev. C 8 www.fairchildsemi.com Symbol V PN Parameter Value Conditions Supply Voltage Units Min. Typ. Max. - 300 400 V Applied between P - NU , NV, N W VCC Control Supply Voltage Applied between V CC(H), VCC(L)-COM 13.5 15 16.5 V VBS High-side Bias Voltage Applied between VB(U)-VS(U), V B(V)-VS(V) ,VB(W)-VS(W) 13.0 15 18.5 V dVCC/dt, dVBS/dt Control supply variation -1 - 1 V/ms 1.5 - - ms - 20 kHz 4 V ms tdead Blanking Time for Preventing Arm-short For Each Input Signal fPWM PWM Input Signal -40°C ＜ TJ ＜ 150°C - V SEN Voltage for Current Sensing Applied between N U, NV, N W - COM (Including surge voltage) -4 Minimun Input Pulse Width (Note 7) 0.5 - - 0.5 - - PWIN(ON) P WIN(OFF) Note: 7. SPM might not make response if input pulse width is less than the recommanded value. Allowable Maximum Output Current 10 9 fSW=5kHz 8 IOrms [Arms] 7 6 5 4 VDC=300V, VCC=VBS=15V 3 TJ ＜ 150℃ , TC ≤ 125℃ 2 1 0 fSW=15kHz M.I.=0.9, P.F.=0.8 Sinusoidal PWM 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Case Temperature, TC [℃] Note: 8. The allowable output current value may be different from the actual application. Figure 8. Allowable Maximum Output Current Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FNA41060 FNA41060 SPM26-AA - - 12 FNA41060 Rev. C 9 www.fairchildsemi.com FNA41060 Smart Power Module Recommended Operating Conditions Parameter Device Flatness Mounting Torque Limits Conditions Note Figure 9 Min. Typ. Max. 0 - +120 Units mm Mounting Screw: - M3 Recommended 0.7N•m 0.6 0.7 0.8 N•m Note Figure 10 Recommended 7.1kg•cm 6.2 7.1 8.1 kg•cm - 11 - g Weight Figure 9. Flatness Measurement Position Pre - Screwing : 1→2 2 Final Screwing : 2→1 1 Note: 9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction. 10. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged. The Pre-Screwing torque is set to 20~30% of maximum torque rating. Figure 10. Mounting Screws Torque Order FNA41060 Rev. C 10 www.fairchildsemi.com FNA41060 Smart Power Module Mechanical Characteristics and Ratings FNA41060 Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR ). a7 : Normal operation: IGBT ON and carrying current. Figure 11. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b1 UVBSD b5 b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR ) b6 : Normal operation: IGBT ON and carrying current Figure 12. Under-Voltage Protection (High-side) FNA41060 Rev. C 11 www.fairchildsemi.com c6 Protection Circuit state SET Internal IGBT Gate-Emitter Voltage c3 FNA41060 Smart Power Module Lower arms control input c7 RESET c4 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Input “L” : IGBT OFF state. c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c7 : IGBT OFF state Figure 13. Short-Circuit Current Protection (Low-side Operation only) Input/Output Interface Circuit 5V-Line (MCU or Control power) SPM R PF=10kΩ IN(UH) , IN (VH) , IN(W H) IN (UL) , IN (VL) , IN(WL) MCU VFO COM Note: 1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS outputs. Figure 14. Recommended CPU I/O Interface Circuit FNA41060 Rev. C 12 www.fairchildsemi.com CBS CBSC RS (25) VS(U) VS(U) (20) IN(UH) Gating UH CBSC CBS (23) VS(V) VS(V) IN(VH) CBSC M C U RS 15V line CPS CPS CPS (21) VS(W) VS(W) IN(WH) (17) VCC(H) CSPC15 CSP15 VS(W) (15) COM LVIC OUT(UL) NU (7) CSPC05 CSP05 (11) VFO Fault Gating WL W (6) VCC RPF RS Gating VL VDC COM (16) VCC(L) Gating UL CDCS OUT(WH) VCC 5V line CBPF M V (5) VB(W) (18) IN(WH) Gating WH OUT(VH) VS(V) (22) VB(W) CBS U (4) VS(U) VB(V) (19) IN(VH) Gating VH OUT(UH) IN(UH) (24) VB(V) RS P (3) VB(U) RSU VFO CPF RS (14) IN(UL) RS (13) IN(VL) RS (12) IN(WL) OUT(VL) IN(UL) RTH Input Signal for Short-Circuit Protection COM (10) CSC RF RSV IN(WL) CSC CPS CPS CPS NV (8) IN(VL) OUT(WL) CSC NW (9) RSW (1) VTH (2) RTH THERMISTOR Temp. Monitoring U-Phase Current V-Phase Current W-Phase Current Note: 1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. Please refer to Figure14. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. (Recommended RS=100 Ω , CPS=1nF) 6) To prevent errors of the protection function, the wiring around RF and C SC should be as short as possible. 7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2ms. 8) Each capacitor should be mounted as close to the pins of the SPM as possible. 9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22mF between the P&GND pins is recommended. 10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W) 12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and frequency characteristics in CBSC. 13) For the detailed information, please refer to the AN-9070 and FEB305-001. Figure 15. Typical Application Circuit FNA41060 Rev. C 13 www.fairchildsemi.com FNA41060 Smart Power Module HVIC (26) VB(U) FNA41060 Smart Power Module Detailed Package Outline Drawings 17-0.50±0.10 (2.609) (2-0.70) 16.891±0.30 16.891±0.30 6.00±0.50 11.10±0.50 PKG.C 19x1.778±0.300=33.782 2.05±0.05 39.00±0.50 PKG.C (R0.50) 36.70±0.15 4.50±0.30 0.50+0.10 -0.05 13.000 PKG.C 6° 2°~ 10.00±0.15 PKG.C 27.23±0.50 23.00±0.50 13.000 2-R1.60 11.10±0.50 15.240±0.30 17.780±0.30 11.10±0.50 (1.50) (1.720) 6.00±0.50 13x2.54±0.300=33.020 (2-0.50) 9-0.60±0.10 PKG.C FNA41060 Rev. C 14 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild ® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ mSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38