SPECIFICATION Device Name : IGBT - IPM Type Name : 7MBP75RTB060 Spec. No. : MS6M 0653 Fuji Electric Co.,Ltd. Matsumoto Factory Sep. 17 '02 K.Sekigawa Sep. 17 '02 Nishiura Sep.-17 -'02 K.Yamada T.Fujihira MS6M 0653 a 1 23 H04-004-07 Revised Records Date Classification Sep.-17-'02 enactment Apr.-09-'03 Revision Ind. a Content Reliability Test Items. Applied date Drawn Issued date K.Sekigawa Apr.-09-'03 N.Matsuda MS6M 0653 Checked Nishiura K.Yamada T.Miyasaka K.Yamada Approved T.Fujihira T.Fujihira a 2 22 H04-004-06 7MBP75RTB060 1. Outline Drawing ( Unit : mm ) a Package type : P610 1 0 9 ±1 9 5 ±0.3 1 3 . 8 ±0.3 67.4 1 0 . 1 6 ±0.2 1 0 . 1 6±0.2 1 0 . 1 6±0.2 1 5 . 2 4±0.25 3 . 2 2 ±0.3 2 ±0.3 5 . 0 8±0.15 5 . 0 8±0.15 5 . 0 8±0.15 1 4 7 4-φ 5 . 5 2 . 5 4 ±0.1 10 16 20 20 10 P N V U 0.5 17 W 0.5 24 26 26 16- 0 . 6 4 2-φ2 . 5 31 9 +1.0 2 2 -0.3 17 8 -0.2 +1.0 14.5 +1.0 7 6-M5 Lot No. Indication of Lot No. Odered No. in monthly Manufactured month (Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D) Last digit of manufactured year 3 . 2 2 ±0.3 2 . 5 4 ±0.1 2 . 5 4 ±0.1 0.1max 2 2 2 4.5 φ2 . 5 (φ1～1.5) 10 8±0.3 □0.64 1 (1～2) 2 2 -0.3 8 8 ±1 7 4 ±0.3 B Details of control terminals Dimensions in mm MS6M 0653 a 3 23 H04-004-03 2．Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output (U). V Output (V). W Output (W). N Negative input supply voltage. B Collector terminal of Brake IGBT. Control circuit № Symbol Description ① GNDU High side ground (U). ② VinU Logic input for IGBT gate drive (U). ③ VccU High side supply voltage (U). ④ GNDV High side ground (V). ⑤ VinV Logic input for IGBT gate drive (V). ⑥ VccV High side supply voltage (V). ⑦ GNDW High side ground (W). ⑧ VinW Logic input for IGBT gate drive (W). ⑨ VccW High side supply voltage (W). ⑩ GND Low side ground. ⑪ Vcc Low side supply voltage. ⑫ VinDB Logic input for Brake IGBT gate drive. ⑬ VinX Logic input for IGBT gate drive (X). ⑭ VinY Logic input for IGBT gate drive (Y). ⑮ VinZ Logic input for IGBT gate drive (Z). ⑯ ALM Low side alarm signal output. MS6M 0653 a 4 23 H04-004-03 3. Block Diagram VccU 3 VinU 2 P Pre- Driver VZ GNDU 1 VccV cV 6 VinV 5 GNDV 4 VccW 9 VinW 8 U Pre- Driver VZ V Pre- Driver VZ W GNDW 7 Vcc 11 VinX 13 GND 10 VinY 14 Pre- Driver VZ Pre- Driver VZ VinZ Pre- Driver 15 VZ B VinDB Pre- Driver 12 VZ N RALM ALM 16 Over heat ing prot ect ion circuit 1. 5kΩ Pre-drivers include following functions 1 Amplifier for driver 2 Short circuit protection 3 Under voltage lockout circuit 4 Over current protection 5 IGBT chip over heating protection MS6M 0653 5 a 23 H04-004-03 4．Absolute Maximum Ratings Tc＝25℃ unless otherwise specified. Items Symbol Min. Max. Units VDC 0 450 V VDC(surge) 0 500 V Vsc 200 400 V Vces 0 600 V DC Ic - 75 A 1ms Icp - 150 A Duty=75.0 % *2 -Ic - 75 A Collector Power Dissipation One transistor *3 Pc - 198 W Collector Current DC Ic - 50 A 1ms Icp - 100 A IF - 50 A Pc - 198 W Supply Voltage of Pre-Driver *4 Vcc -0.5 20 V Input Signal Voltage *5 Vin -0.5 Vcc+0.5 V Input Signal Current Alarm Signal Voltage *6 Alarm Signal Current *7 Iin - 3 mA VALM -0.5 Vcc V ＩALM - 20 mA Tj - 150 ℃ Topr -20 100 ℃ Tstg -40 125 ℃ Viso - AC2500 V - - 3.5 Nm Bus Voltage (between terminal P and N) DC Surge Shortoperating Inverter Collector-Emitter Voltage *1 Brake Collector Current Forward Current of Diode Collector Power Dissipation One transistor *3 Junction Temperature Operating Case Temperature Storage Temperature Isolating Voltage (Terminal to base, 50/60Hz sine wave 1min.) *8 Screw Torque Terminal (M5) Mounting (M5) Note *1 ：Vces shall be applied to the input voltage between terminal P and U or Ｖ or W or DB, N and U or V or W or DB *2 ： 125℃/FWD Rth(j-c)/(Ic×VF MAX)=125/0.855/(75×2.6)×100=75.0% *3 ： Pc=125℃/IGBT Rth(j-c)=125/0.63=198W [Inverter] Pc=125℃/IGBT Rth(j-c)=125/0.63=198W [Break] *4 ： VCC shall be applied to the input voltage between terminal No.3 and 1,6 and 4, 9 and 7, 11 and 10. *5 ： Vｉｎ shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *6 ： ＶＡＬＭ shall be applied to the voltage between terminal No.16 and 10. *7 ： ＩＡＬＭ shall be applied to the input current to terminal No.16. *8 ： 50Hz/60Hz sine wave 1 minute. MS6M 0653 a 6 23 H04-004-03 5. Electrical Characteristics Tj＝25℃，Vcc＝15V unless otherwise specified. 5.1 Main circuit Item Collector Current Inverter at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector Current Brake at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Conditions Symbol ICES VCE（ｓａｔ） VF ICES VCE（ｓａｔ） VF Min. Typ. Max. Units - - 1.0 mA Terminal - - 2.4 Ｖ Chip - 2.0 - V Terminal - - 2.6 Ｖ Chip - 1.6 - V - - 1.0 mA Terminal - - 2.2 Ｖ Chip - 1.75 - V Terminal - - 3.3 Ｖ Chip - 1.9 - V ＶＣＥ＝600V Vin terminal open. Ｉｃ＝75A -Ｉｃ＝75A ＶＣＥ＝600V Vin terminal open. Ｉｃ＝50A -Ｉｃ＝50A Turn-on time ton VDC＝300V、Tj=125℃ 1.2 - - Turn-off time toff Ic＝75A Fig.1，Fig.6 - - 3.6 trr VDC＝300V - - 0.3 40 - - mJ Min. Typ. Max. Units - - 18 mA - - 65 mA ON 1 1.35 1.7 OFF 1.25 1.6 1.95 - 8.0 - Tc＝-20℃ Fig.2 1.1 - - Tc＝25℃ Fig.2 - 2.0 - Tc＝125℃ Fig.2 - - 4.0 1425 1500 1575 Reverse recovery time IF＝75A Fig.1，Fig.6 PAV Maximum AvalancheEnergy us internal wiring inductance＝50nH Main circuit wiring (A non-repetition) inductance＝54nH 5.2 Control circuit Item Supply current of P-side pre-driver (one unit) Supply current Symbol Iccp Iccn Conditions Switching Frequency : 0～15kHz Tc＝-20～125℃ Fig.7 of N-side pre-driver Input signal threshold voltage Input Zener Voltage Alarm Signal Hold Time Current Limit Resistor Vin(th) Vz tALM RALM Rin＝20kΩ Alarm terminal MS6M 0653 V V ms Ω 7 a 23 H04-004-03 5.3 Protection Section （Vcc＝１５Ｖ） Item Symbol Over Current Protection Level of Inverter circuit Conditions Tj=125℃ Min. Typ. Max. 113 - - Ioc Over Current Protection Level Units A Tj=125℃ 75 - - Tj=125℃ - 5 - us Tj=125℃ Fig.4 - - 8 us 150 - - ℃ - 20 - ℃ 110 - 125 ℃ of Brake circuit Over Current Protection Delay time tdoc SC Protection Delay time tsc IGBT Chips Over Heating TjOH Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Surface of IGBT Chips TjH TｃOH Temperature Level VDC=0V,IC=0A CaseTemperature Over Heating Protection Hysteresis TcH - 20 - Under Voltage Protection Level VUV 11 - 12.5 VH 0.2 0.5 - Symbol Min. Typ. Max. IGBT Rth(j-c) - - 0.63 FWD Rth(j-c) - - 0.855 IGBT Rth(j-c) Case to Fin Thermal Resistance with Compound Rth(c-f) Under Voltage Protection Hysteresis V 6. Thermal Characteristics （Ｔｃ＝２５℃） Item Junction to Case Inverter Thermal Resistance *9 Brake 7. Noise Immunity Units ℃/W 0.63 - 0.05 - （Vdc=300V、Vcc=15V、Test Circuit Fig 5.） Item Conditions Min. Typ. Max. Units Common mode Pulse width 1us,polarity ±,10 minuets ±2.0 - - kV ±5.0 - - kV Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 400 V Power Supply Voltage of Pre-Driver Vcc 13.5 15 16.5 V - 2.5 - 3 Nm Symbol Min. Typ. Max. Units Wt - 450 - g rectangular noise Common mode lightning surge Judge：no over-current, no miss operating Rise time 1.2us,Fall time 50usInterval 20s,10 times Judge：no over-current, no miss operating 8. Recommended Operating Conditions Item Screw Torque (M5) 9. Weight Item Weight *9：( For 1device ，Case is under the device ) MS6M 0653 8 a 23 H04-004-03 Ｖｉｎ Ｖｉｎ（ｔｈ） Ｏｎ Ｖｉｎ（ｔｈ） ｔｒｒ ９０％ ５０％ Ｉｃ ９０％ 1０％ ｔｏff ｔｏｎ Figure 1. Switching Time Waveform Definitions Vge (Inside IPM) Fault (Inside IPM) off off /Vin on on Gate On Gate Off normal alarm /ALM tALM＞Max. tALM＞Max. ① ② tALM 2ms(typ.) ③ Fault：Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram Necessary conditions for alarm reset (refer to ① to ③ in figure2.) ① This represents the case when a failure-causing Fault lasts for a period more than tALM. The alarm resets when the input Vin is OFF and the Fault has disappeared. ② This represents the case when the ON condition of the input Vin lasts for a period more than tALM. The alarm resets when the Vin turns OFF under no Fault conditions. ③ This represents the case when the Fault disappears and the Vin turns OFF within tALM. The alarm resets after lasting for a period of the specified time tALM. off /Vin on on Ioc Ic /ALM ① ② ＜tdoc alarm tdoc Figure 3. Over-current Protection Timing Diagram Period ①: When a collector current over the OC level flows and the OFF command is input within a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period ②: When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output. MS6M 0653 a 9 23 H04-004-03 t SC Ic Ic IALM Ic IALM IALM Figure.4 Definition of tsc 20k DC 15V VinU CT P VccU IPM U SW1 AC200V GNDU Vcc V VinX W + 20k DC 15V 4700p SW2 Noise N GND Earth Cooling Fin Figure 5. Noise Test Circuit Vcc 20k DC 15V P L IPM + Vin DC 300V HCPL4504 GND N Ic Figure 6. Switching Characteristics Test Circuit Icc DC 15V A Vcc P IPM P.G +8V fsw Vin U V W GND N Figure 7. Icc Test Circuit MS6M 0653 a 10 23 H04-004-03 10. Truth table 10.1 IGBT Control The following table shows the IGBT ON/OFF status with respect to the input signal Vin. The IGBT turn-on when Vin is at “Low” level under no alarm condition. Input (Vin) Output (IGBT) Low ON High OFF 10.2 Fault Detection (1) When a fault is detected at the high side, only the detected arm stops its output. At that time the IPM dosen’t any alarm. (2) When a fault is detected at the low side, all the lower arms stop their outputs and the IP outputs an alarm of the low side. Fault High side U-phase High side V-phase High side W-phase Low side Case Alarm Output ＩＧＢＴ U-phase V-phase W-phase Low side ALM OC OFF * * * H UV OFF * * * H TjOH OFF * * * H OC * OFF * * H UV * OFF * * H TjOH * OFF * * H OC * * OFF * H UV * * OFF * H TjOH * * OFF * H OC * * * OFF L UV * * * OFF L TjOH * * * OFF L TcOH * * * OFF L Temperature *：Depend on input logic. MS6M 0653 a 11 23 H04-004-03 11. Cautions for design and application 1. Trace routing layout should be designed with particular attention to least stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible. フォトカプラとＩＰＭの入力端子間の配線は極力短くし、フォトカプラの一次側と二次側の浮遊容量を小さくした パターンレイアウトにして下さい。 2. Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible. 高速フォトカプラのVcc-GND間に、コンデンサを出来るだけ近接して取り付けて下さい。 3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH ≦ 0.8µs. 高速フォトカプラは、tpHL,tpLH≦0.8us、高CMRタイプをご使用ください。 4. For the alarm output circuit, use low-speed type optical isolators with CTR ≧ 100%. アラーム出力回路は、低速フォトカプラCTR≧100%のタイプをご使用ください。 5. For the control power Vcc, use four power supplies isolated each. And they should be designed to reduce the voltage variations. 制御電源Vccは、絶縁された４電源を使用してください。また、電圧変動を抑えた設計として下さい。 6. Suppress surge voltages as possible by reducing the inductance between the DC bus P and N, and connecting some capacitors between the P and N terminals. P-N間の直流母線は出来るだけ低インダクタンス化し、P-N端子間にコンデンサを接続するなどしてサージ 電圧を低減して下さい。 7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF between the three-phase lines each and the ground. ACラインからのノイズ侵入を防ぐために、３相各線－アース間に４７００ｐＦ程のコンデンサを接続して下さい。 8. At the external circuit, never connect the control terminal ①GNDU to the main terminal U-phase, ④GNDV to V-phase, ⑦GNDW to W-phase, and ⑩GND to N-phase. Otherwise, malfunctions may be caused. 制御端子①ＧＮＤＵと主端子Ｕ相、制御端子④ＧＮＤVと主端子V相、制御端子⑦ＧＮＤWと主端子W相、 制御端子⑩ＧＮＤと主端子Nを外部回路で接続しないで下さい。誤動作の原因になります。 9. Take note that an optical isolator’s response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND. 入力端子-GND間にコンデンサを接続すると、フォトカプラ一次側入力信号に対する応答時間が長くなります のでご注意ください。 MS6M 0653 12 a 23 H04-004-03 10. Taking the used isolator’s CTR into account, design with a sufficient allowance to decide the primary forward current of the optical isolator. フォトカプラの一次側電流は、お使いのフォトカプラのCTRを考慮し十分に余裕をもった設計にして下さい。 11. Apply thermal compound to the surfaces between the IPM and its heat sink to reduce the thermal contact resistance. 接触熱抵抗を小さくするために、ＩＰＭとヒートシンクの間にサーマルコンパウンドを塗布して下さい。 12. Finish the heat sink surface within roughness of 10µm and flatness (camber) between scre positions of 0 to +100µm. If the flatness is minus, the heat radiation becomes worse due to a gap between the heat sink and the IPM. And, if the flatness is over +100µm, there is a da that the IPM copper base may be deformed and this may cause a dielectric breakdown. ヒートシンク表面の仕上げは、粗さ10um以下、ネジ位置間 +100μm 0 での平坦度（反り）は、0～100umとして下さい。平坦度がマ イナスの場合、ヒートシンクとIPMの間に隙間ができ放熱が Heat sink 悪化します。また、平坦度が＋100um以上の場合ＩＰＭの銅 ﾍﾞｰｽが変形し絶縁破壊を起こす危険性があります。 Mounting holes 13. This product is designed on the assumption that it applies to an inverter use. Sufficient examination is required when applying to a converter use. Please contact Fuji Electric Co., if you would like to applying to converter use. 本製品は、インバータ用途への適用を前提に設計されております。コンバータ用途へ適用される場合は、 十分な検討が必要です。もし、コンバータへ適用される場合は御連絡ください。 14. Please see the 『Fuji IGBT-IPM R SERIES APPLICATION MANUAL』 and 『Fuji IGBT MODULES N SERIES APPLICATION MANUAL』. 『富士IGBT-IPM Rシリーズ アプリケーションマニュアル』及び『IGBTﾓｼﾞｭｰﾙ Nシリーズ アプリケーション マニュアル』を御参照ください。 MS6M 0653 a 13 23 H04-004-03 12. Example of applied circuit 応用回路例 20kΩ + IF Vcc ③ 10uF ② AC200V P IPM 0.1uF ① 20kΩ + IF Vcc U ⑥ 10uF ⑤ 0.1uF V M + ④ 20kΩ + IF Vcc ⑨ 10uF W ⑧ 0.1uF ⑦ 20kΩ + IF Vcc B ⑪ 10uF ⑫ 0.1uF N ⑩ 20kΩ + IF 10uF ⑬ 0.1uF 20kΩ + IF 10uF ⑭ 0.1uF 20kΩ + IF 10uF ⑮ 0.1uF 5V 1k ⑯ 13. Package and Marking 梱包仕様 Please see the MT6M4140 which is packing specification of P610 & P611 & P621 package． Ｐ６１０，６１１，６２１ 梱包仕様書 ＭＴ６Ｍ４１４０を御参照ください。 14. Cautions for storage and transportation 保管、運搬上の注意 ・ Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%). 常温常湿(5～35℃、45～75%)で保存して下さい。 ・ Avoid a sudden change in ambient temperature to prevent condensation on the module surfaces. モジュールの表面が結露しないよう、急激な温度変化を避けて下さい。 ・ Avoid places where corrosive gas generates or much dust exists. 腐食性ガスの発生場所、粉塵の多い場所は避けて下さい。 ・ Store the module terminals under unprocessed conditions モジュールの端子は未加工の状態で保管すること。. ・ Avoid physical shock or falls during the transportation. 運搬時に衝撃を与えたり落下させないで下さい。 15. Scope of application 適用範囲 This specification is applied to the IGBT-IPM (type: 7MBP75RTB060). 本仕様書は、IGBT-IPM (型式：7MBP75RTB060)に適用する。 16. Based safety standards 準拠安全規格 UL1557 MS6M 0653 a 14 23 H04-004-03 a １８．Reliability １８．Reliability Test Items Test categories Test items 1 Terminal strength Reference norms EIAJ ED-4701 Test methods and conditions Pull force : 40 N (main terminal) 10 N (control terminal) Test time : 10 ±1 sec. Screw torque : 2.5 ~ 3.5 N･m (M5) Test time : 10 ±1 sec. Range of frequency : 10～500 Hz Sweeping time : 15 min. Acceleration : 100 m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration : 5000 m/s2 Pulse width 1.0 ms 衝撃 Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 235 ±5 ℃ Immersion duration : 5.0 ±0.5 sec. はんだ付け性 Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 260 ±5 ℃ soldering heat Immersion time : 10 ±1sec. Test time : 1 time はんだ耐熱性 Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High temperature Storage temp. : 125 ±5 ℃ storage 高温保存 Test duration : 1000 hr. 2 Low temperature Storage temp. : -40 ±5 ℃ storage 低温保存 Test duration : 1000 hr. 3 Temperature Storage temp. : 85 ±2 ℃ humidity storage Relative humidity : 85 ±5% Test duration : 1000hr. 高温高湿保存 4 Unsaturated Test temp. : 120 ±2 ℃ pressure cooker Atmospheric pressure : 1.7x105 Pa : 85 ±5% プレッシャークッカー Test humidity Test duration : 96 hr. 5 Temperature Test temp. : Minimum storage temp. -40 ±5℃ cycle Maximum storage temp. 125 ±5℃ Normal temp. 5 ~ 35℃ 温度サイクル Dwell time : Tmin ~ TN ~ Tmax ~ TN 1hr. 0.5hr. 1hr. 0.5hr. Number of cycles : 100 cycles 6 Thermal shock +0 Test temp. : High temp. side 100 -5 ℃ 熱衝撃 Environment Tests Mechanical Tests 端子強度 (Pull test) 2 Mounting Strength 締付け強度 3 Vibration 振動 : : : : 5 (1:0) 5 (1:0) 5 (1:0) 5 (1:0) 5 (1:0) 5 (1:0) Test Method 201 5 (1:0) Test Method 202 5 (1:0) Test Method 103 5 (1:0) 5 (1:0) Test Method 105 5 (1:0) Test Method 307 5 (1:0) Test Method 401 MethodⅠ Test Method 402 methodⅡ Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test code C Test Method 103 Test code E method Ⅰ Condition code A +5 Fluid used Dipping time Transfer time Number of cycles AcceptNumber ance of sample number Low temp. side 0 -0 ℃ Pure water (running water) 5 min. par each temp. 10 sec. 10 cycles MS6M 0653 a 20 23 H04-004-03 a Test categories Test items 1 High temperature reverse bias 高温逆ﾊﾞｲｱｽ Endurance Endurance Tests Tests AcceptReference norms Number EIAJ ance of sample ED-4701 number Test methods and conditions Test temp. Bias Voltage Bias Method Test duration Test temp. Relative humidity Bias Voltage 2 Temperature humidity bias 高温高湿ﾊﾞｲｱｽ Bias Method Test duration ON time OFF time Test temp. 3 Intermitted operating life (Power cycle) 断続動作 Number of cycles : Ta = 125 ±5℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E Vcc = 15V : 1000 hr. : 85 ±2 ℃ : 85 ±5 % : VC = 0.8×VCES Vcc = 15V : Applied DC voltage to C-E : 1000 hr. : 2 sec. : 18 sec. : ∆ Tj=100 ±5deg Tj ≦ 150 ℃, Ta=25 ±5℃ : 15000 cycles Test Method 101 5 (1:0) Test Method 102 5 (1:0) 5 (1:0) Condition code C Test Method 106 １９．Failure １９．Failure Criteria Item Characteristic Electrical Leakage current characteristic Saturation voltage Forward voltage Unit ICES - USL×2 mA VCE(sat) - USL×1.2 V VF - USL×1.2 V IGBT Ｒth(j-c) - USL×1.2 ℃/W resistance FWD Ｒth(j-c) - USL×1.2 ℃/W Ioc LSL×0.8 USL×1.2 Ａ Alarm signal hold time tALM LSL×0.8 USL×1.2 ms Over heating Protection TcOH LSL×0.8 USL×1.2 ℃ Isolation voltage inspection Failure criteria Lower limit Upper limit Thermal Over Current Protection Visual Symbol Viso Broken insulation - - The visual sample - Note Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS6M 0653 a 21 23 H04-004-03 Warnings 1. This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が 破壊する場合があります。 2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを 必ず付けて２次破壊を防いでください。 3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. And ,when studying the device duty at a short-circuit current non-repetitive interruption, make sure that the paths are also within the avalanche proof(PAV) specification which is calculated from the snubber inductance, the IPM inner inductance and the turn-off current. In case of use of IGBT-IPM over these specifications, it might be possible to be broken. 通常のターンオフ動作における素子責務の検討の際には、ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にある ことを確認して下さい。また、非繰返しの短絡電流遮断における素子責務の検討に際しては、スナバーインダクタンスと ＩＰＭ内部インダクタンス及びターンオフ電流から算出されるアバランシェ耐量(PAV)仕様内である事を確認して下さい。 これらの仕様を越えて使用すると、素子が破壊する場合があります。 4. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性 寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 5. If the product had been used in the environment with acid, organic matter, and corrosive gas (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 6. The thermal stress generated from rise and fall of Tj restricts the product lifetime. You should estimate the ΔTj from power losses and thermal resistance, and design the inverter lifetime within the number of cycles provided from the power cycle curve. (Technical Rep. No.: MT6M4057) 製品の寿命は、接合温度の上昇と下降によって起こる熱ストレスで決まります。損失と熱抵抗から∆Tjを推定し、パワー サイクル寿命カーブで決まるサイクル数以下で、インバータの寿命を設計して下さい(技術資料№：MT6M4057)。 7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合が あります。 MS6M 0653 a 22 23 H04-004-03 8. According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. 本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。ネジが長いとケースが破損する場合が あります。 9. If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を 実施して下さい。 Caution 1. Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、誤動作する 場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災等による財産に対する 損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保のための手段を 講じて下さい。 2. The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書に よって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 3. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co., Ltd. MS6M 0653 a 23 23 H04-004-03