SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records Date Classification Jan.-29-’0 3 enactment May.-19-’0 3 Revision Ind. Content Applied date Issued date a Reliability Test Items Drawn N.Matsuda N.Matsuda MS6M 0675 Checked A.Nishiura K.Yamada T.Miyasaka K.Yamada Approved T.Fujihira T.Fujihira a 2 22 H04-004-06 a 1. Package Outline Drawings Package type : P621 1 3 .8 ±0.3 1 09 ±1 95 ±0.3 6 6 .4 4 1 0 ±0.2 10 6 ±0.15 6 ±0.15 2 ±0.3 3 . 2 2 ±0.3 ±0.2 1 0 ±0.2 1 2 ±0.25 6 ±0.15 2 ±0.1 4 - φ 5 .5 1 10 7 4 ±0.3 20 N V U 0.5 17 W 0.5 24 26 26 1 9 - □ 0 .5 2- φ2.5 9 +0.6 3 1-0.3 22 17 +1.0 8 -0.2 17 Lot No. Indication of Lot No. 2 ±0.1 2 ±0.1 3.22 ±0.3 2 ±0.1 2 2 0.1 max 2 Odered No. in monthly Manufactured month (Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D) Last digit of manufactured year 4.5 φ2.5 (φ1～1.5) 10 8 ±0.3 □0.5 1 22 +1.0 -0.3 12.5 7 6-M5 (1～2) 88 P +1.0 -0.3 ±1 20 B Details of control terminals Dimensions in mm MS6M 0675 a 3 22 H04-004-03 2. Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output (U). V Output (V). W Output (W). N Negative input supply voltage. B No contact. Control circuit No Symbol Description 1 GNDU High side ground (U). 2 ALMU Alarm signal output (U). 3 VinU Logic input for IGBT gate drive (U). 4 VccU High side supply voltage (U). 5 GNDV High side ground (V). 6 ALMV Alarm signal output (V). 7 VinV Logic input for IGBT gate drive (V). 8 VccV High side supply voltage (V). 9 GNDW High side ground (W). 10 ALMW Alarm signal output (W). 11 VinW Logic input for IGBT gate drive (W). 12 VccW High side supply voltage (W). 13 GND Low side ground. 14 Vcc Low side supply voltage. 15 VinDB No contact. 16 VinX Logic input for IGBT gate drive (X). 17 VinY Logic input for IGBT gate drive (Y). 18 VinZ Logic input for IGBT gate drive (Z). 19 ALM Low side alarm signal output. MS6M 0675 a 4 22 H04-004-03 3. Block Diagram P VccU 4 VinU 3 Pre - Driver ALMU 2 RALM 1.5k Vz GNDU 1 VccV 8 VinV 7 U Pre- Driver ALMV 6 RALM 1.5k Vz GNDV 5 VccW 12 VinW 11 ALMW 10 V Pre- Driver RALM 1.5k Vz GNDW 9 Vcc 14 VinX 16 W Pre- Driver Vz GND VinY 13 17 Pre- Driver Vz VinZ 18 Pre- Driver Vz B NC VinDB 15 N ALM 19 RALM 1.5k Over heating protection circuit Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection a MS6M 0675 5 22 H04-004-03 4. Absolute Maximum Ratings Tc=25°C unless otherwise specified. Items Symbol Min. Max. Units VDC 0 450 V VDC(surge) 0 500 V Vsc 200 400 V Vces 0 600 V DC Ic - 100 A 1ms Icp - 200 A Duty=72.3% *2 -Ic - 100 A Pc - 347 W Supply Voltage of Pre-Driver *4 Vcc -0.5 20 V Input Signal Voltage *5 Vin -0.5 Vcc+0.5 V Input Signal Current Iin - 3 mA Alarm Signal Voltage *6 VALM -0.5 Vcc V Alarm Signal Current *7 ＩALM - 20 mA Tj - 150 °C Operating Case Temperature Topr -20 100 °C Storage Temperature Tstg -40 125 °C Viso - AC2500 V - - 3.5 Nm Bus Voltage DC (between terminal P and N) Surge Short operating Inverter Collector-Emitter Voltage *1 Collector Current Collector Power Dissipation One transistor *3 Junction Temperature Isolating Voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw Torque Terminal (M5) Mounting (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or Ｖ or W, N and U or V or W . *2 : 125°C/FWD Rth(j-c)/(Ic×VF MAX)=125/0.665/(100×2.6)×100=72.3% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.36=347W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13. *5 : Vｉｎ shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 : ＶＡＬＭ shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : ＩＡＬＭ shall be applied to the input current to terminal No.2,6,10 and 19. MS6M 0675 a 6 22 H04-004-03 5. Electrical Characteristics Tj=25°C, Vcc=15V unless otherwise specified. 5.1 Main circuit Item Collector Current Inverter at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Conditions Symbol ICES VCE(sat) VF Ｖ Ｃ Ｅ =600V Min. Typ. Max. Units - - 1.0 mA - - 2.3 Ｖ - 1.8 - V - - 2.6 Ｖ - 1.6 - V Vin terminal open. Iｃ =100A Terminal Chip -Iｃ =100A Terminal Chip Turn-on time ton VDC =300V, Tj=125°C 1.2 - - Turn-off time toff Ic=100A Fig.1, Fig.6 - - 3.6 Reverse recovery time trr - - 0.3 100 - - mJ Min. Typ. Max. Units - - 18 mA - - 65 mA ON 1.00 1.35 1.70 OFF 1.25 1.60 1.95 - 8.0 - 1.1 - - - 2.0 - - - 4.0 1425 1500 1575 VDC=300V s IF=100A Fig.1, Fig.6 internal wiring Maximum AvalancheEnergy PAV (A non-repetition) inductance=50nH Main circuit wiring inductance=54nH 5.2 Control circuit Item Supply current of P-side pre-driver (one unit) Supply current Conditions Symbol Iccp Iccn Switching Frequency : 0~15kHz Tc=-20~125°C Fig.7 of N-side pre-driver Input signal threshold voltage Input Zener Voltage Vin(th) Vz Rin=20kΩ Tc=-20°C Alarm Signal Hold Time tALM Tc=25°C Tc=125°C Current Limit Resistor Fig.2 Fig.2 Fig.2 RALM Alarm terminal V V ms Ω a MS6M 0675 7 22 H04-004-03 5.3 Protection Section (Vcc=15V) Item Symbol Over Current Protection Level Conditions Min. Typ. Max. Units Ioc Tj=125°C 150 - - A tdoc Tj=125°C - 5 - s Tj=125°C Fig.4 - - 8 s 150 - - °C - 20 - °C 110 - 125 °C of Inverter circuit Over Current Protection Delay time SC Protection Delay time tsc IGBT Chips Over Heating TjOH Surface Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection of IGBT Chips TjH TcOH Protection Temperature Level VDC=0V, Ic=0A Case Temperature Over Heating Protection Hysteresis TcH - 20 - °C Under Voltage Protection Level VUV 11.0 - 12.5 V VH 0.2 0.5 - Symbol Min. Typ. Max. Units IGBT Rth(j-c) - - 0.36 ℃/W FWD Rth(j-c) - - 0.665 Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - Min. Typ. Max. Units ±2.0 - - kV ±5.0 - - kV Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 400 V Power Supply Voltage of Pre-Driver Vcc 13.5 15.0 16.5 V - 2.5 - 3.0 Nm Symbol Min. Typ. Max. Units Wt - 450 - g Under Voltage Protection Hysteresis 6. Thermal Characteristics (Tc=25°C) Item Junction to Case Inverter Thermal Resistance *8 *8 : ( For 1device, Case is under the device ) 7. Noise Immunity (Vdc=300V, Vcc=15V, Test Circuit Fig 5.) Conditions Item Common mode rectangular noise Common mode lightning surge Pulse width 1us,polarity ±,10 minuets Judge : no over-current, no miss operating Rise time 1.2us,Fall time 50s Interval 20s,10 times Judge : no over-current, no miss operating 8. Recommended Operating Conditions Item Screw Torque (M5) 9. Weight Item Weight a MS6M 0675 8 22 H04-004-03 Ｖｉｎ Ｖｉｎ（ｔｈ） Ｏｎ Ｖｉｎ（ｔｈ） ｔｒｒ ９０％ ５０％ Ｉｃ ９０％ 1０％ ｔｏｎ ｔｏff Figure 1. Switching Time Waveform Definitions off /Vin Vge (Inside IPM) Fault (Inside IPM) off on Gate On on Gate Off normal alarm /ALM tALM＞Max. tALM＞Max. ① ② tALM 2ms(typ.) ③ Fault：Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram Necessary conditions for alarm reset (refer to ① to ③ in figure2.) ① This represents the case when a failure-causing Fault lasts for a period more than tALM. The alarm resets when the input Vin is OFF and the Fault has disappeared. ② This represents the case when the ON condition of the input Vin lasts for a period more than tALM. The alarm resets when the Vin turns OFF under no Fault conditions. ③ This represents the case when the Fault disappears and the Vin turns OFF within tALM. The alarm resets after lasting for a period of the specified time tALM. off /Vin on on Ioc Ic /ALM ① ② ＜tdoc alarm tdoc Figure 3. Over-current Protection Timing Diagram Period ①: When a collector current over the OC level flows and the OFF command is input within a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period ②: When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output. MS6M 0675 a 9 22 H04-004-03 tSC Ic Ic IALM Ic IALM IALM Figure.4 Definition of tsc 20k DC 15V VinU CT P VccU IPM U SW1 AC200V GNDU Vcc V VinX W + 20k DC 15V 4700p SW2 Noise N GND Earth Cooling Fin Figure 5. Noise Test Circuit Vcc P 20k DC 15V L IPM + Vin DC 300V HCPL4504 GND N Ic Figure 6. Switching Characteristics Test Circuit Icc DC 15V A Vcc P IPM P.G +8V fsw Vin U V W GND N Figure 7. Icc Test Circuit MS6M 0675 a 10 22 H04-004-03 10. Truth table 10.1 IGBT Control The following table shows the IGBT ON/OFF status with respect to the input signal Vin. TheI GBTt ur nonwhenVi ni sat“ Low”l ev elundernoal ar mc ondi t i on. Input (Vin) Output (IGBT) Low ON High OFF 10.2 Fault Detection (1) When a fault is detected at the high side, only the detected arm stops its output. Att hatt i met heI PM dos en’ tanyal ar m. (2) When a fault is detected at the low side, all the lower arms stop their outputs and the IPM outputs an alarm of the low side. Fault High side Uphase High side Vphase High side Wphase Low side Case IGBT Alarm Output U-phase V-phase W-phase Low side ALM-U ALM-V ALM-W ALM OC OFF * * * L H H H UV OFF * * * L H H H TjOH OFF * * * L H H H OC * OFF * * H L H H UV * OFF * * H L H H TjOH * OFF * * H L H H OC * * OFF * H H L H UV * * OFF * H H L H TjOH * * OFF * H H L H OC * * * OFF H H H L UV * * * OFF H H H L TjOH * * * OFF H H H L TcOH * * * OFF H H H L Temperature *：Depend on input logic. MS6M 0675 a 11 22 H04-004-03 11. Cautions for design and application 1. Trace routing layout should be designed with particular attention to least stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible. フォトカプラとＩＰＭの入力端子間の配線は極力短くし、フォトカプラの一次側と二次側の浮遊容量を小さくした パターンレイアウトにして下さい。 2. Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible. 高速フォトカプラのVcc-GND間に、コンデンサを出来るだけ近接して取り付けて下さい。 3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH ≦ 0.8µs. 高速フォトカプラは、tpHL,tpLH≦0.8us、高CMRタイプをご使用ください。 4. For the alarm output circuit, use low-speed type optical isolators with CTR ≧ 100%. アラーム出力回路は、低速フォトカプラCTR≧100%のタイプをご使用ください。 5. For the control power Vcc, use four power supplies isolated each. And they should be designed to reduce the voltage variations. 制御電源Vccは、絶縁された４電源を使用してください。また、電圧変動を抑えた設計として下さい。 6. Suppress surge voltages as possible by reducing the inductance between the DC bus P and N, and connecting some capacitors between the P and N terminals. P-N間の直流母線は出来るだけ低インダクタンス化し、P-N端子間にコンデンサを接続するなどしてサージ 電圧を低減して下さい。 7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF between the three-phase lines each and the ground. ACラインからのノイズ侵入を防ぐために、３相各線－アース間に４７００ｐＦ程のコンデンサを接続して下さい。 8. At the external circuit, never connect the control terminal ①GNDU to the main terminal U-phase, ⑤GNDV to V-phase, ⑨GNDW to W-phase, and ⑬GND to N-phase. Otherwise, malfunctions may be caused. 制御端子①ＧＮＤＵと主端子Ｕ相、制御端子⑤ＧＮＤVと主端子V相、制御端子⑨ＧＮＤWと主端子W相、 制御端子⑬ＧＮＤと主端子Nを外部回路で接続しないで下さい。誤動作の原因になります。 9. Takenot et hatanopt i c ali s ol at or ’ sr esponset ot hepr i mar yi nputsi gnalbec omess l ow if a capacitor is connected between the input terminal and GND. 入力端子-GND間にコンデンサを接続すると、フォトカプラ一次側入力信号に対する応答時間が長くなります のでご注意ください。 a MS6M 0675 12 22 H04-004-03 10. Taki ngt heusedi sol at or ’ sCTRi nt oaccount ,desi gnwi t hasuf f i ci ental l owancet odeci de the primary forward current of the optical isolator. フォトカプラの一次側電流は、お使いのフォトカプラのCTRを考慮し十分に余裕をもった設計にして下さい。 11. Apply thermal compound to the surfaces between the IPM and its heat sink to reduce the thermal contact resistance. 接触熱抵抗を小さくするために、ＩＰＭとヒートシンクの間にサーマルコンパウンドを塗布して下さい。 12. Finish the heat sink surface within roughness of 10µm and flatness (camber) between screw positions of 0 to +100µm. If the flatness is minus, the heat radiation becomes worse due to a gap between the heat sink and the IPM. And, if the flatness is over +100µm, there is a danger that the IPM copper base may be deformed and this may cause a dielectric breakdown. ヒートシンク表面の仕上げは、粗さ10um以下、ネジ位置間 +100μm 0 での平坦度（反り）は、0～100umとして下さい。平坦度がマ イナスの場合、ヒートシンクとIPMの間に隙間ができ放熱が Heat sink 悪化します。また、平坦度が＋100um以上の場合ＩＰＭの銅 ﾍﾞｰｽが変形し絶縁破壊を起こす危険性があります。 Mounting holes 13. This product is designed on the assumption that it applies to an inverter use. Sufficient examination is required when applying to a converter use. Please contact Fuji Electric Co.,Ltd if you would like to applying to converter use. 本製品は、インバータ用途への適用を前提に設計されております。コンバータ用途へ適用される場合は、 十分な検討が必要です。もし、コンバータへ適用される場合は御連絡ください。 14. Please see the 『Fuji IGBT-IPM R SERIES APPLICATION MANUAL』 and 『Fuji IGBT MODULES N SERIES APPLICATION MANUAL』. 『富士IGBT-IPM Rシリーズ アプリケーションマニュアル』及び『IGBTﾓｼﾞｭｰﾙ Nシリーズ アプリケーション マニュアル』を御参照ください。 MS6M 0675 a 13 22 H04-004-03 12. Example of applied circuit 応用回路例 20 kΩ P +10 IF 0 .1 u F Vc c ③ U ① 5 V A C 2 00 V ④ uF + V 1k ② W ⑧ uF B ⑦ N Ｍ 20 kΩ IF 0 .1 u F +10 Vc c ⑤ 5 V 1k ⑥ 20kΩ IF 0 .1 u F Vc c +10 ⑫ uF ⑪ ⑨ 5 V 1k ⑩ ⑭ IPM Vc c ⑬ IF IF IF 2 0kΩ 0 .1 u F 10 2 0 kΩ 0 .1 u F 10 2 0 kΩ 0 .1 u F 10 uF ⑯ uF ⑰ uF ⑱ ⑮ 5 V 1k ⑲ The alarm signal should be connected to Vcc when it it is not used. 不使用のアラーム端子は、 制御電源 Vcc に接続して下さい。 13. Package and Marking 梱包仕様 Please see the MT6M4140 which is packing specification of P610 & P611 & P621 package． Ｐ６１０，６１１，６２１ 梱包仕様書 ＭＴ６Ｍ４１４０を御参照ください。 14. Cautions for storage and transportation 保管、運搬上の注意 ・ Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%). 常温常湿(5～35℃、45～75%)で保存して下さい。 ・ Avoid a sudden change in ambient temperature to prevent condensation on the module surfaces. モジュールの表面が結露しないよう、急激な温度変化を避けて下さい。 ・ Avoid places where corrosive gas generates or much dust exists. 腐食性ガスの発生場所、粉塵の多い場所は避けて下さい。 ・ Store the module terminals under unprocessed conditions モジュールの端子は未加工の状態で保管すること。. ・ Avoid physical shock or falls during the transportation. 運搬時に衝撃を与えたり落下させないで下さい。 15. Scope of application 適用範囲 This specification is applied to the IGBT-IPM (type: 6MBP100RTJ060). 本仕様書は、IGBT-IPM (型式：6MBP100RTJ060)に適用する。 16. Based safety standards 準拠安全規格 UL1557 MS6M 0675 a 14 22 H04-004-03 17.Characteristics 17-1.Control Circuit Characteristics(Respresentative) Input signal thresh old voltage vs. P ower sup ply voltag e P ower sup ply current vs. Switching frequency Tc=1 25°C 2.5 P-side N-side 50 Vcc=17V Vcc=15V Vcc=13V 40 30 20 Vcc=17V Vcc=15V Vcc=13V 10 Inp u t s ig na l thresho ld voltag e : Vin(on ),Vin (off) (V) Pow er su p ply c urre nt : Icc (m A) 60 2 } Vin(off) } Vin(on) 1.5 1 0.5 0 0 0 5 10 15 20 12 25 Switching frequency : fs w (kHz) 18 1 Un de r voltage h ys te ris is : VH (V) Und er voltag e : VUVT (V) 13 14 15 16 17 Power supply voltag e : Vcc (V) Under voltage hysterisis vs. Jnction tem perature Under voltage vs. Junc tion temp erature 14 12 10 8 6 4 2 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ju nc tion temperatu re : Tj (°C) 140 20 40 60 80 100 120 140 Junction tem peratu re : Tj(°C) Over heatin g characteristics TcO H,TjO H,TcH,TjH vs. Vc c Alarm hold tim e vs. P ower sup ply voltag e 3 200 Over h ea tin g protec tio n : Tc OH,TjO H (° C ) O H hy sterisis : TcH ,TjH (°C ) Alarm h old time : tALM (m Se c) Tj=25°C Tj= 125°C 2.5 Tc= 100° C 150 2 Tc=25°C 1.5 TcO H 100 1 0.5 0 12 TjO H 13 14 15 16 17 Power supply voltag e : Vcc (V) 18 50 TcH,TjH 0 12 13 14 15 16 17 Power supp ly voltag e : Vcc (V) MS6M 0675 18 a 15 22 H04-004-03 17-2.Main Circuit Characteristics (Representative) Collector current vs . Collec tor-Em itter voltage Tj=25°C(Term inal) Collector current vs. Collector-Em itter voltage Tj=25°C(Chip) 160 Vc c= 17V Vcc=15V 140 Vcc= 13V Coll ecto r Cu rre nt : Ic (A) 140 Collector Cu rre nt : Ic (A) 160 Vc c= 15V 120 Vcc=17V 100 100 80 60 40 20 80 60 40 20 0 0 0 0.5 1 1.5 2 2.5 3 0 Collector-Em itter voltage : Vce (V) 160 1 1.5 2 2.5 3 Collector current vs . Collec tor-Em itter voltage Tj=125 °C(Term inal) 160 Vcc=15V 140 0.5 Collector-Em itter voltage : Vce (V) Collector curren t vs . Collec tor-Em itter voltage Tj=125 °C(Chip) Vcc=15V 140 Vc c= 17V Vcc=13V 120 100 80 60 40 Coll ecto r Cu rre nt : Ic (A) Collector Cu rre nt : Ic (A) Vc c= 13V 120 20 Vc c=17V Vcc= 13V 120 100 80 60 40 20 0 0 0 0.5 1 1.5 2 2.5 3 0 Collector-Em itter voltage : Vce (V) 0.5 1 1.5 2 2.5 3 Collector-Em itter voltage : Vce (V) Forward current vs. Forward voltage (Term inal) Forward current vs. Forward voltage (Chip) 150 150 125°C Fo rw ard Cu rren t : If (A) Fo rw ard Curren t : If (A) 125° C 25°C 100 50 0 25° C 100 50 0 0 0.5 1 1.5 Forw ard vol tage : Vf (V) 2 2.5 0 0.5 1 1.5 2 2.5 Forw ard vol tage : Vf (V) MS6M 0675 a 16 22 H04-004-03 12 10 Eon 8 6 4 Eoff 2 E rr 0 0 20 40 60 80 100 16 14 Eon 12 10 8 6 Eoff 4 Err 2 0 120 140 160 0 20 60 80 100 120 140 160 Collector current : Ic (A) Reversed b iased safe operating area Vc c=1 5V,Tj 125°C Transient therm al resistance Th erm al resista n ce : Rth (j-c) (°C /W ) 250 200 150 RBS O A(Repetitive pu lse) 100 50 1 FWD IG BT 0.1 0.01 0 0 100 200 300 400 500 600 0.001 700 0.01 0.1 1 Pu lse width :Pw (sec) Collector-Em itter voltag e : Vce (V) Power derating for FW D (per device) Power d eratin g for IG BT (per device) 250 Colle cter Power D issip at ion : P c (W ) 400 Collecter P owe r Dissip ation : Pc (W ) 40 Collec tor current : Ic (A) 300 Co llector cu rren t : Ic (A) Switching Loss vs. Collector Current Edc=300V,V cc=15V,Tj=1 25°C Switch in g loss : Eo n,Eo ff,Err (m J/cy cle) Switch in g loss : Eon ,Eoff,Err (m J/cycle) Switching Loss vs. Collector Current Edc =30 0V,Vcc =15 V,Tj=25°C 350 300 250 200 150 100 50 0 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Case Tem p erature : Tc (°C) 0 20 40 60 80 100 120 140 160 Case Tem p erature : Tc (°C) MS6M 0675 a 17 22 H04-004-03 Switching tim e vs. Collec tor current Edc =30 0V,Vcc=15 V,Tj=25°C Switching tim e vs. Collec tor current Edc=300 V,V cc=15V,Tj=1 25°C 10000 S witch in g tim e : ton ,toff,tf (n Sec) S witch in g tim e : to n,toff,tf (nSec) 10000 ton toff 1000 100 tf 10 ton toff 1000 100 tf 10 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Col lector cu rrent : Ic (A) Col lector cu rrent : Ic (A) Revers e recovery characteris tic s trr,Irr vs.IF R eve rse rec overy cu rren t:Irr(A) Reverse recovery time:trr(nsec) trr125°C trr25° C 100 Irr125°C Irr25° C 10 1 20 40 60 80 100 120 140 160 Forw ard cu rren t:IF(A) MS6M 0675 a 18 22 H04-004-03 a 18. Reliability Test Items Test categories Test items 1 Terminal strength Test methods and conditions Pull force : 40 N (main terminal) Mechanical Tests 端子強度 (Pull test) 2 Mounting Strength 締付け強度 3 Vibration 振動 Environment Tests Reference norms EIAJ ED-4701 5 (1:0) 5 (1:0) 5 (1:0) 5 (1:0) 5 (1:0) Test Method 201 5 (1:0) Test Method 202 5 (1:0) Test Method 103 5 (1:0) 5 (1:0) Test Method 105 5 (1:0) Test Method 307 5 (1:0) Test Method 402 methodⅡ Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test code C Test Method 103 Test code E method Ⅰ Condition code A +5 : : : : (1:0) MethodⅠ Test time : Screw torque : Test time : Range of frequency : Sweeping time : Acceleration : 100 m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration : 5000 m/s2 Pulse width 1.0 ms 衝撃 Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 235 ±5 ℃ はんだ付け性 Immersion duration : 5.0 ±0.5 sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 260 ±5 ℃ soldering heat Immersion time : 10 ±1sec. はんだ耐熱性 Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High temperature Storage temp. : 125 ±5 ℃ storage 高温保存 Test duration : 1000 hr. 2 Low temperature Storage temp. : -40 ±5 ℃ storage 低温保存 Test duration : 1000 hr. 3 Temperature Storage temp. : 85 ±2 ℃ humidity storage Relative humidity : 85 ±5% Test duration : 1000hr. 高温高湿保存 4 Unsaturated Test temp. : 120 ±2 ℃ pressure cooker Atmospheric pressure : 1.7x105 Pa : 85 ±5% プレッシャークッカー Test humidity Test duration : 96 hr. 5 Temperature Test temp. : Minimum storage temp. -40 ±5℃ cycle Maximum storage temp. 125 ±5℃ Normal temp. 5 ~ 35℃ 温度サイクル Dwell time : Tmin ~ TN ~ Tmax ~ TN 1hr. 0.5hr. 1hr. 0.5hr. Number of cycles : 100 cycles 6 Thermal shock +0 Test temp. : High temp. side 100 -5 ℃ 熱衝撃 Fluid used Dipping time Transfer time Number of cycles 5 Test Method 401 10 N (control terminal) 10 ±1 sec. 2.5 ~ 3.5 N･m (M5) 10 ±1 sec. 10～500 Hz 15 min. AcceptNumber ance of sample number Low temp. side 0 -0 ℃ Pure water (running water) 5 min. par each temp. 10 sec. 10 cycles MS6M 0675 a 19 22 H04-004-03 a Endurance Endurance Tests Tests Test categories Test items Reference norms EIAJ ED-4701 Test methods and conditions 1 High temperature reverse bias 高温逆ﾊﾞｲｱｽ 2 Temperature humidity bias 高温高湿ﾊﾞｲｱｽ Test temp. Bias Voltage Bias Method Test duration Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. 3 Intermitted operating life (Power cycle) 断続動作 Number of cycles : Ta = 125 ±5℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E Vcc = 15V : 1000 hr. : 85 ±2 ℃ : 85 ±5 % : VC = 0.8×VCES Vcc = 15V : Applied DC voltage to C-E : 1000 hr. : 2 sec. : 18 sec. : Tj=100 ±5deg Tj ≦ 150 ℃, Ta=25 ±5℃ : 15000 cycles AcceptNumber ance of sample number Test Method 101 5 (1:0) Test Method 102 5 (1:0) 5 (1:0) Condition code C Test Method 106 19. Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT Ｒth(j-c) resistance FWD Ｒth(j-c) Over Current Protection Ioc Alarm signal hold time tALM Over heating Protection TcOH Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit Note USL×2 mA USL×1.2 V USL×1.2 V USL×1.2 ℃/W USL×1.2 ℃/W LSL×0.8 USL×1.2 Ａ LSL×0.8 USL×1.2 ms LSL×0.8 USL×1.2 ℃ Broken insulation The visual sample - LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS6M 0675 a 20 22 H04-004-03 Warnings 1. This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が 破壊する場合があります。 2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを 必ず付けて２次破壊を防いでください。 3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. And ,when studying the device duty at a short-circuit current non-repetitive interruption, make sure that the paths are also within the avalanche proof(PAV) specification which is calculated from the snubber inductance, the IPM inner inductance and the turn-off current. In case of use of IGBT-IPM over these specifications, it might be possible to be broken. 通常のターンオフ動作における素子責務の検討の際には、ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にある ことを確認して下さい。また、非繰返しの短絡電流遮断における素子責務の検討に際しては、スナバーインダクタンスと ＩＰＭ内部インダクタンス及びターンオフ電流から算出されるアバランシェ耐量(PAV)仕様内である事を確認して下さい。 これらの仕様を越えて使用すると、素子が破壊する場合があります。 4. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性 寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 5. If the product had been used in the environment with acid, organic matter, and corrosive gas (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 6. The thermal stress generated from rise and fall of Tj restricts the product lifetime. Yous houl des t i mat et heΔTj f r om powerl os s esandt her mal r es i s t anc e,anddes i gnt hei nver t erl i f et i me within the number of cycles provided from the power cycle curve. (Technical Rep. No.: MT6M4057) 製品の寿命は、接合温度の上昇と下降によって起こる熱ストレスで決まります。損失と熱抵抗からΔTj を推定し、パワー サイクル寿命カーブで決まるサイクル数以下で、インバータの寿命を設計して下さい(技術資料№：MT6M4057)。 7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合が あります。 MS6M 0675 a 21 22 H04-004-03 8. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合が あります。 9. If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を 実施して下さい。 Caution 1. Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、誤動作する 場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災等による財産に対する 損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保のための手段を 講じて下さい。 2. The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書に よって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 3. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co., Ltd. MS6M 0675 a 22 22 H04-004-03