TPD1030F Preliminary Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1030F 2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive TPD1030F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC offers intelligent self-protection function. Features • Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). • Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C) • Low Leakage Current: IDSS = 10 µA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C) • Low Input Current: IIN = 300 µA (max) (@VIN = 5 V, Tch = 25°C) • 8-pin SOP package with embossed-tape packing. Weight: 0.08 g (typ.) Pin Assignment (top view) SOURCE1 1 8 DRAIN1 IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 IN2 4 5 DRAIN2 Note1: That because of its MOS structure, this product is sensitive to static electricity. 980910EBA1 • TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. • The products described in this document are subject to the foreign exchange and foreign trade laws. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-03-01 1/5 TPD1030F Preliminary Block Diagram SOURCE1 1 8 DRAIN1 Overtemperature Detection /Protection Overcurrent Detection /Protection IN1 2 7 DRAIN1 SOURCE2 3 6 DRAIN2 Overtemperature Detection /Protection Overcurrent Detection /Protection IN2 4 5 DRAIN2 Pin Description Pin No. Symbol 1 SOURCE1 2 IN1 3 SOURCE2 4 IN2 5, 6 DRAIN2 Pin Description Source pin 1 Input pin 1 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Source pin 2 Input pin 2 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin 2 Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. 7, 8 DRAIN1 Drain pin 1 Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC. 2000-03-01 2/5 TPD1030F Preliminary Timing Chart Input Signal Overcurrent Protection Overtemperature Protection Output Current Current limiting (limiter) Overtemperature protection (Note2) Note2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the overheating detection temperature. Truth Table IN VOUT L H H L L H H H L H H H Mode Normal Overcurrent Overtemperature Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDS (DC) 40 V Drain current ID Internally Limited A Input voltage VIN −0.3 to 7 V Power dissipation (t = 10 s) PD Operating temperature Topr −40 to 110 °C Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Drain-source voltage 2.0 W (Note3) 2 Note3: Drive operation: Mount on glass epoxy boad [1 inch × 0.8 t] (in the two devices driving) 2000-03-01 3/5 TPD1030F Preliminary Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note3) Rth (ch-a) 62.5 °C/W 2 Note3: Drive operation: Mount on glass epoxy boad [1 inch × 0.8 t] (in the two devices driving) Electrical Characteristics (Tch = 25°C) Characteristics Symbol Test Circuit V (CL) DSS Vth VIN (opr) IDSS IIN (1) Min Typ. Max Unit VIN = 0 V, ID = 1 mA 40 60 V VDS = 13 V, ID = 10 mA 1.0 2.8 V 3 7 V VIN = 0 V, VDS = 30 V 10 µA VIN = 5 V, at normal operation 300 IIN (2) VIN = 5 V, when protective circuit is actuated 390 Drain-source on resistance RDS (ON) VIN = 5 V, ID = 0.5 A 0.44 0.6 Ω Overtemperature protection TS VIN = 5 V 150 160 °C Overcurrent protection IS VIN = 5 V 1.0 A Drain-source clamp voltage Input threshold voltage Protective circuit operation input voltage range Draint cut-off current Input current Switching time Source-drain diode forward voltage Test Condition tON 1 30 1 VDD = 13 V, VIN = 5 V, ID = 0.5 A tOFF 30 VDSF IF = 1 A, VIN = 0 V 1.7 µA µs V Test Circuit 1 Switching time measuring circuit Test Circuit Measured Waveforms TPD1030F OUT GND V To be set so that ID = 0.5 A. 13 V P.G IN 5V 90% VIN Waveform 10% 90% VOUT Waveform 13 V 10% tON tOFF 2000-03-01 4/5 TPD1030F Preliminary Package Dimensions Weight: 0.08 g (typ.) 2000-03-01 5/5