June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. 11 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V, RDS(ON) = 0.013 Ω @ VGS = 4.5 V. These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. Fast switching speed. These devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching. D S D S 44 20 A pin 1 SuperSOT TM-8 D Absolute Maximum Ratings Symbol SuperSOTTM-8 SuperSOTTM-6 SOT-23 D D G Low gate charge. Small footprint 38% smaller than a standard SO-8. Low profile package(1mm thick). Power handling capability similar to SO-8. SO-8 SOT-223 SOIC-16 5 4 6 3 7 2 8 1 TA = 25oC unless otherwise noted Parameter FDR4420A Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Draint Current - Continuous (Note 1a) 11 A PD Maximum Power Dissipation (Note 1a) 1.8 (Note 1b) 1 - Pulsed 40 (Note 1c) TJ,TSTG Operating and Storage Temperature Range W 0.9 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W © 1998 Fairchild Semiconductor Corporation FDR4420 Rev.D Electrical Characteristics Symbol (TA = 25OC unless otherwise noted ) Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C 30 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V V 1 µA 10 µA VGS = 20 V, VDS= 0 V 100 nA VGS = -20 V, VDS= 0 V -100 nA TJ = 55°C IGSS Gate - Body Leakage Current IGSS Gate - Body Leakage, Reverse mV /oC 20 ON CHARACTERISTICS (Note 2) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 11A 1 TJ =125°C VGS = 4.5 V, ID = 9 A ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID= 11 A mV /oC -6 1.4 3 V 0.0075 0.009 Ω 0.0125 0.016 0.01 0.013 30 A 25 S 2560 pF 560 pF 280 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 10V, RGEN = 1 Ω VDS = 15 V, ID = 9.3 A, VGS = 5 V 11 20 ns 15 27 ns 25 40 ns 21 34 ns 23 33 nC 7 nC 11 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.5 A (Note 2) 0.7 1.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 board in still air. a. 70OC/W on a 1 in2 pad of 2oz copper. b. 125OC/W on a 0.026 in2 of pad of 2oz copper. c. 135OC/W on a 0.005 in2 of pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDR4420 Rev.D Typical Electrical Characteristics VGS =10V 3 4.0V 3.5V 6.0V 24 R DS(ON) , NORMALIZED 32 4.5V 3.0V 16 8 2.5V 0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 40 2.5 2 3.5 0.4 0.8 1.2 1.6 4.0 1.5 4.5 5.0 6.0 10 1 0.5 0 VGS = 3.0V 2 0 8 16 24 32 40 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate Voltage. 0.04 1.6 V GS =10V R DS(ON) ,(OHM) 1.4 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE ID = 11A 0.6 -50 I D = 5.5A 0.035 0.03 0.025 0.02 0.015 T A = 125 o C 0.01 25 o C 0.005 Figure 3. On-Resistance Variation 2 4 6 8 VGS ,GATE-SOURCE VOLTAGE (V) 40 IS , REVERSE DRAIN CURRENT (A) 50 TJ = -55°C VDS = 10V 25°C 125°C 40 10 Figure 4. On Resistance Variation with Gate-To-Source Voltage. with Temperature. I D , DRAIN CURRENT (A) R DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 30 20 10 VGS =0V 5 TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 1 1.5 V GS 2 2.5 3 3.5 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR4420 Rev.D Typical Electrical Characteristics (continued) 5000 VDS = 5V I D = 11A 10V 8 3000 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 4 C iss 2000 1000 C oss 500 f = 1 MHz V GS = 0V 2 0 200 0.1 0 10 20 30 40 50 C rss 0.3 60 1 3 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 (O LI N) MIT 100 us 1m s 10m s 100 ms 1s 10 s DC 5 1 0.3 VGS = 10V SINGLE PULSE R θJA = 135°C/W TA = 25°C 0.1 0.03 0.01 0.1 0.2 0.5 SINGLE PULSE R θJA= 135°C/W TA = 25°C 40 POWER (W) 20 RDS 30 20 10 1 2 5 10 30 0 0.0001 50 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D , DRAIN CURRENT (A) 100 0.5 D = 0.5 RθJA (t) = r(t) * RθJA R θJA = 135°C/W 0.3 0.2 0.1 0.2 0.1 P(pk) 0.05 t1 0.05 0.03 0.02 0.01 0.0001 0.02 Single Pulse 0.001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 0.01 0.01 0.1 1 10 100 300 t 1, TIME (sec) Figure 11.Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDR4420 Rev.D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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