MJD32C PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction High Collector-EmitterVoltage Ideally Suited for Automated Assembly Processes Ideal for Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • • Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.34 grams (approximate) COLLECTOR 3 4 BASE 2 1 Top View Maximum Ratings EMITTER Device Schematic Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -100 -100 -5 -3 -5 -1 Unit V V V A A A Symbol PD RθJC PD RθJA TJ, TSTG Value 15 8.33 1.5 80 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation @TC = 25°C Thermal Resistance, Junction to Case Power Dissipation @TA = 25°C (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. MJD32C Document number: DS31624 Rev. 3 - 2 1 of 6 www.diodes.com May 2010 © Diodes Incorporated MJD32C Typical Characteristics 10 VCE(sat) -IC Collector Current (A) -IC Collector Current (A) 10 Limited DC 1 1s 100ms 10ms 100m 1ms 100µs Single Pulse T amb=25°C 10m 100m 1 10 100 -VCE Collector-Emitter Voltage (V) VCE(sat) Limited 10ms 1ms 0.1 0.01 0.1 D=0.5 40 Single Pulse D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Thermal Resistance (°C/W) Thermal Resistance (°C/W) 60 0 100µ 6 D=0.5 4 D=0.2 D=0.1 2 D=0.05 Single Pulse 0 100µ 1m 10m 100m T CASE=25°C 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS31624 Rev. 3 - 2 100 8 Pulse Width (s) MJD32C 10 Safe Operating Area Minimum Copper D=0.2 1 -VCE Collector-Emitter Voltage (V) T AMB=25°C 20 100μs Single Pulse T CASE=25°C Safe Operating Area 80 DC 100ms 1 Transient Thermal Impedance 2 of 6 www.diodes.com May 2010 © Diodes Incorporated MJD32C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(SUS)CEO ICEO ICES IEBO -100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -50 -20 -1.0 V μA μA mA VCE(SAT) VBE(ON) ⎯ ⎯ -1.2 -1.8 V V hFE ⎯ ⎯ 25 10 ⎯ ⎯ 50 ⎯ Current Gain-Bandwidth Product fT 3.0 ⎯ ⎯ MHz Small Signal Current Gain hfe 20 ⎯ ⎯ ⎯ DC Current Gain Test Conditions IC = -30mA, IB = 0 VCB = -60V, IB = 0 VCE = -100V, VEB = 0 VEB = -5.0V, IC = 0 IC = -3.0A, IB = -375mA VCE = -4.0V, IC = -3A VCE = -4.0V, IC = -1A VCE = -4.0V, IC = -3A SMALL SIGNAL CHARACTERISTICS Notes: IC = -500mA, VCE = -10V, f = 1MHz VCE = -10V, IC = -0.5A, f = 1KHz 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 1,000 2.0 1.5 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) VCE = -4V 1.0 0.5 T A = 150°C T A = 85°C T A = 25°C 100 T A = -55°C 10 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature MJD32C Document number: DS31624 Rev. 3 - 2 3 of 6 www.diodes.com 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current May 2010 © Diodes Incorporated MJD32C -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 8 T A = 150°C 0.1 T A = 85°C TA = 25°C TA = -55°C 0.01 0.001 1 VCE = -4V 1.2 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C T A = 150°C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 8 1.0 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 Cibo 100 T A = 150°C 0.2 Cobo 10 0 1 0.1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current Ordering Information 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics (Note 5) Part Number MJD32C-13 Notes: 1.4 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 Case TO252-3L Packaging 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YYWW MJD32C MJD32C Document number: DS31624 Rev. 3 - 2 MJD32C = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year, (ex: 08 = 2008) WW = Week Code (01 – 53) 4 of 6 www.diodes.com May 2010 © Diodes Incorporated MJD32C Package Outline Dimensions E TO252-3L Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 MJD32C Document number: DS31624 Rev. 3 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com May 2010 © Diodes Incorporated MJD32C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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