2DB1182Q 32V PNP MEDIUM POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > -32V IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability TO252 (DPAK) Case: TO252 (DPAK) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Weight: 0.34 grams (Approximate) C C BB E Top View E Pin Out Configuration Top view Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel 2DB1182Q-13 AEC-Q101 2DB1182Q 13 16 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW 2DB1182Q 2DB1182Q Document number: DS35651 Rev. 3 - 2 2DB1182Q = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year, (ex: 14 = 2014) WW = Week Code 01-52 1 of 6 www.diodes.com November 2014 © Diodes Incorporated 2DB1182Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -2 A Peak Pulse Collector Current ICM -3 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Power Dissipation Characteristic (Note 5) PD 1.2 W Power Dissipation @TL = +25°C (Note 6) PD 15 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 104 °C/W Thermal Resistance, Junction to Lead (Note 6) RθJL 8.3 °C/W TJ, TSTG -55 to +150 °C Operating and Storage Temperature Range ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Note: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 110°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R JA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 2DB1182Q Document number: DS35651 Rev. 3 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Figure 1 Transient Thermal Response 2 of 6 www.diodes.com 100 1,000 10,000 November 2014 © Diodes Incorporated 2DB1182Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -40 V IC = -50A, IE = 0 Collector-Emitter Breakdown Voltage BVCEO -32 V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5 V IE = -50A, IC = 0 Collector Cutoff Current ICBO -1 A VCB = -20V, IE = 0 Emitter Cutoff Current IEBO -1 A VEB = - 4V, IC = 0 VCE(sat) -0.8 V IC = -2A, IB = -0.2A hFE 120 270 VCE = -3V, IC = -0.5A fT 110 MHz VCE = -5V, IC = -0.1A, f = 30MHz VCB = -10V, f = 1MHz ON CHARACTERISTICS (Note 8) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Cobo 26 pF Turn-On Time ton — 109 — ns Delay Time td — 60 — ns Rise Time tr — 49 — ns Turn-Off Time toff — 280 — ns Storage Time ts — 246 — ns Fall Time tf — 34 — ns Output Capacitance VCC = 30V ICC = 150mA IB1 = - IB2 = 15mA 8. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. Note: Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1,000 400 VCE = -3V 800 600 IB = -5mA hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (mA) 350 IB = -4mA IB = -3mA 400 IB = -2mA 300 TA = 125°C 250 TA = 25°C 150 100 TA = -55°C IB = -1mA 50 0 0.1 1 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage Document number: DS35651 Rev. 3 - 2 TA = 85°C 200 200 2DB1182Q TA = 150°C 3 of 6 www.diodes.com 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Figure 3 Typical DC Current Gain vs. Collector Current November 2014 © Diodes Incorporated 0.4 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.3 0.2 TA = 150°C TA = 125°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.001 1.2 VCE = -3V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 125°C 0.2 TA = 150°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Figure 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 0.8 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Figure 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 2DB1182Q TA = -55°C TA = 25°C 0.6 TA = 85°C TA = 125°C 0.4 TA = 150°C Cibo 100 Cobo 0.2 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Figure 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 7 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 140 120 VCE = -5V f = 30MHz 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 8 Typical Gain-Bandwidth Product vs. Collector Current 2DB1182Q Document number: DS35651 Rev. 3 - 2 4 of 6 www.diodes.com November 2014 © Diodes Incorporated 2DB1182Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 7°±1° c2 L3 D A2 L4 e TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm H b(3x) 0.508 b2(2x) Gauge Plane D1 Seating Plane a L A1 E1 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X 2DB1182Q Document number: DS35651 Rev. 3 - 2 5 of 6 www.diodes.com November 2014 © Diodes Incorporated 2DB1182Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com 2DB1182Q Document number: DS35651 Rev. 3 - 2 6 of 6 www.diodes.com November 2014 © Diodes Incorporated