KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB (TYP) at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 25 V Emitter-Base Voltage 4 V IC Collector Current 50 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 ICBO Collector Cut-off Current VCB=30V, IE=0 IEBO Emitter Cut-off Current VEB=3V, IC=0 hFE DC Current Gain VCE=12.5V, IC=12.5mA Min. 30 Typ. Max. Units V 0.1 µA 0.1 µA 25 V 20 200 VCE (sat) Collector-Emitter Saturation Voltage IC=15mA, IB=1.5mA 0.2 VBE (sat) Base-Emitter Saturation Voltage IC=15mA, IB=1.5mA 1.5 V Cob Output Capacitance VCB=10V, IE=0, f=1MHz 2 pF Cc·rbb´ Collector-Base Time Constant VCB=10V, IC=1mA f=30MHz 25 ps fT Current Gain Bandwidth Product VCE=12.5V, IC=12.5mA 300 GPE Power Gain VCC=12.5V, IC=12.5mA f=45MHz 28 ©2002 Fairchild Semiconductor Corporation 0.8 V MHz 33 36 dB Rev. A2, September 2002 KSC388 Typical Characteristics 16 1000 IB = 70µA 12 IB = 60µA 10 IB = 50µA 8 IB = 40µA 6 IB = 30µA 4 IB = 20µA 2 IB = 10µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE=12.5V 14 10 0.1 0 0 4 8 12 16 20 100 24 1 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 Figure 2. DC current Gain 10 1000 IC =10IB IC[mA], COLLECTOR CURRENT VCE=6V 1 0.1 0.01 0.1 1 100 10 1 0.1 0.0 10 10 Cib[pF],Cob[pF], CAPACITANCE f = 1MHz IE=0 Cib Cob 1 10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Input Capacitance Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 0.6 0.8 1.0 1.2 100 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1 0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 0.1 0.1 0.2 1000 VCE =12.5V 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, September 2002 KSC388 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1