SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 Units V VCEO VEBO Collector-Emitter Voltage -25 V Emitter-Base Voltage -6 IC Collector Current V PC Collector Power Dissipation TJ TSTG -1.5 A 1 W Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -40 BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -6 ICBO Collector Cut-off Current VCB= -35V, IE=0 IEBO Emitter Cut-off Current VEB= -6V, IC=0 hFE1 hFE2 hFE3 DC Current Gain VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA 45 85 40 Typ. Max. Units V V V -100 nA -100 nA 170 160 80 300 VCE (sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V VBE (sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 Cob Output Capacitance VCB= -10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 100 V 15 pF 200 MHz hFEClassification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 SS8550 Typical Characteristics 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 -100 VCE = -1V IC[mA], COLLECTOR CURRENT IC=10IB -1000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 -10 -1 -0.1 -0.0 -1000 100 f=1MHz IE=0 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation -0.4 -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -1000 Figure 2. DC current Gain -10000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Cob[pF], CAPACITANCE -1 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, November 2002 SS8550 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1