DIODES MBRD835L

MBRD835L
8A LOW VF SCHOTTKY BARRIER RECTIFIER
NEW PRODUCT
Features
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
P
4
2
Max
A
6.3
6.7
H
B
10
C
0.3
0.8
M
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 0.4 grams (approx.)
Maximum Ratings
Min
G
3
Mechanical Data
Dim
J
B
1
DPAK
E
A
D
K
C
L
PIN 1
PIN 4, BOTTOMSIDE
HEAT SINK
PIN 3
Note:
D
2.3 Nominal
E
2.1
2.5
G
0.4
0.6
H
1.2
1.6
J
5.3
5.7
K
0.5 Nominal
L
1.3
M
1.0
1.8
P
5.1
5.5
All Dimensions in mm
Pins 1 & 3 must be electrically
connected at the printed circuit board.
@ TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
35
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VR(RMS)
25
V
Average Rectified Forward Current
@ TC = 88C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IF(AV)
8
A
IFSM
75
A
Typical Thermal Resistance Junction to Case (Note 2)
RJC
6.0
C/W
Typical Thermal Resistance Junction to Ambient (Note 2)
RJA
80
C/W
Tj
-65 to +125
C
TSTG
-65 to +150
°C
RMS Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
35
V
IR = 1mA
Forward Voltage (Note 1)
VFM
0.48
0.51
0.41
V
IF = 8A, TS = 25C
IF = 8A, TS = 125C
Peak Reverse Current (Note 1)
IRM
0.1
1.4
35
mA
TS = 25C, VR = 35V
TS = 100C, VR = 35V
Junction Capacitance
Cj
600
pF
f = 1.0MHz, VR = 4.0V DC
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Test Condition
1. Short duration test pulse used to minimize self-heating effect.
2. Mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
DS30284 Rev. B-2
1 of 2
MBRD835L
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
RθJA = 6°C/W
Tj = 125°C
15.0
12.5
IPK
IAV = π (Resistive Load)
10.0
7.5
5.0
2.5
0
60
70
90
80
110
100
120
10
TA = +125°C
TA = +25°C
0.1
0.01
0.001
0.0001
0
130
Cj, JUNCTION CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT (mA)
TA = +125ºC
1
TA = +100ºC
TA = +75ºC
0.1
0.01
TA = +25ºC
300
400
600
500
f = 1MHz
1000
100
0.001
0
10
5
15
20
25
30
35
dc
4
RθJA = 80°C/W
Tj = 125°C
3.5
3
2.5
2
1.5
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Current Derating, Free Air
DS30284 Rev. B-2
2 of 2
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance vs. Reverse Voltage
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
5
5
0
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
0.5
200
10,000
10
1
100
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
100
4.5
TA = +100°C
1
TC, CASE TEMPERATURE (°C)
Fig. 1 Current Derating, Infinite Heatsink
IF(AV), AVERAGE FORWARD CURRENT (A)
NEW PRODUCT
17.5
8
Tj = 125°C
7
6
dc
5
4
3
2
1
0
0
3 4.5 6 7.5 9 10.5 12 13.5 15
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
1.5
MBRD835L