MBRD1035CTL 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER SPICE MODEL: MBRD1035CTL NEW PRODUCT Features · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability Very Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 DPAK E A P 4 2 · · · · Case: DPAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: See Sheet 2 Weight: 0.4 grams (approx.) Ordering Information: See Below ¾ 10 C 0.3 0.8 D 2.3 Nominal Maximum Ratings M K C PIN 1 L PIN 4, BOTTOMSIDE HEAT SINK PIN 3 6.7 B 3 D Max 6.3 H Mechanical Data · · Min A G J B 1 Dim E 2.1 G 0.4 2.5 0.6 H 1.2 1.6 5.7 J 5.3 K 0.5 Nominal L 1.3 M 1.0 1.8 ¾ P 5.1 5.5 All Dimensions in mm @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See Figure 4) Symbol Value Unit VRRM VRWM VR 35 V VR(RMS) 25 V IO 5 10 A Per Leg Per Package Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load Per Package (JEDEC Method) Typical Thermal Resistance Junction to Case Bottom Side Per Leg (Note 1) IFSM 75 A RqJC 2.43 °C/W Voltage Rate of Change @ VR = 35V, Tj = 25°C dv/dt 10,000 V/ms Tj -55 to +125 °C TSTG -55 to +125 °C Operating Temperature Range Storage Temperature Range Notes: 1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas. Ordering Information (Note 2) Notes: Device Packaging Shipping MBRD1035CTL-T DPAK 2500/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30286 Rev. B-2 1 of 3 www.diodes.com MBRD1035CTL ã Diodes Incorporated @ TA = 25°C unless otherwise specified Symbol Min V(BR)R 35 Forward Voltage (Note 3) VFM ¾ ¾ ¾ ¾ Peak Reverse Current (Note 3) IRM ¾ ¾ ¾ ¾ Typical Junction Capacitance Cj ¾ Characteristic Reverse Breakdown Voltage (Note 3) Notes: Typ Max Unit ¾ ¾ V IR = 500mA ¾ ¾ ¾ ¾ 0.47 0.41 0.56 0.55 V IF = 5A, TS = 25°C IF = 5A, TS = 100°C IF = 10A, TS = 25°C IF = 10A, TS = 100°C 0.04 ¾ ¾ ¾ 2.0 30 200 5 mA mA mA mA VR = 35V, Tj = 25°C VR = 35V, Tj = 100°C VR = 17.5V, Tj = 25°C VR = 17.5V, Tj = 100°C 340 ¾ pF f = 1.0MHz, VR = 4.0V DC Test Condition 1. Device mounted on PC board with 14mm2 (.013mm thick) copper pad areas. 2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. Short duration pulse test used to minimize self-heating effect. Marking Information YWW MBRD 1035CTL MBRD1035CTL = Product type marking code = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 IF, INSTANTANEOUS FORWARD CURRENT (A) NEW PRODUCT Electrical Characteristics Tj = 125°C 10 Tj = +25°C Tj = 100°C 1 0.1 0.01 0.001 0.0001 0 100 200 300 400 500 100 Tj = +125°C 10 Tj = +100°C 1 0.1 0.01 0.001 600 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics (Per Element) DS30286 Rev. B-2 Tj = +25°C 2 of 3 www.diodes.com 0 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics (Per Element) MBRD1035CTL IF(AV), AVERAGE FORWARD CURRENT (A) 7 Cj, JUNCTION CAPACITANCE (pF) f = 1MHz 100 10 0 5 10 15 20 25 30 35 40 6 Note 1 5 Note 2 4 3 Note 3 2 1 0 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Junction Capacitance vs. Reverse Voltage (Per Element) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) NEW PRODUCT 1000 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 DC Forward Current Derating (Per Element) 4.0 Tj = 125°C 3.5 2 3.0 2.5 2.0 3 1.5 1.0 Notes: 0.5 0 0 5 8 7 9 10 3 6 1 2 4 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation (Per Element) 1. TA = TSOLDERING POINT, RqJC = 2.43°C/W, RqCA = 0°C/W. 2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W. 3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75°C/W. DS30286 Rev. B-2 3 of 3 www.diodes.com MBRD1035CTL