DIODES MBRM5100

MBRM5100
5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
NEW PRODUCT
Features
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Reverse Breakdown Voltage
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
G
P
3
1
Case: POWERMITEâ3 Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See sheet 3
Weight: 0.072 grams (approx.)
H
Max
A
4.03
4.09
B
6.40
6.61
D
G
2
M
D
K
C
C
PIN 1
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
1.83 NOM
1.10
1.14
.178 NOM
5.01
5.17
J
4.37
4.43
L
PIN 3, BOTTOMSIDE
HEAT SINK
.889 NOM
H
K
L
PIN 2
Maximum Ratings
Min
E
Mechanical Data
·
·
·
Dim
C
J
B
·
·
POWERMITEâ3
E
A
.178 NOM
.71
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
VR(RMS)
70
V
IO
5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@TC = 80°C
IFSM
100
A
Typical Thermal Resistance Junction to Case
RqJC
1.2
°C/W
Typical Thermal Resistance Junction to Soldering Point
RqJS
2.7
°C/W
Tj
-65 to +125
°C
TSTG
-65 to +150
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(See also figure 5)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
100
¾
¾
V
IR = 0.2mA
Forward Voltage (Note 1)
VFM
¾
¾
¾
¾
0.75
0.58
0.84
0.67
0.81
0.64
0.90
0.73
V
IF = 5A, Tj = 25°C
IF = 5A, Tj = 125°C
IF = 10A, Tj = 25°C
IF = 10A, Tj = 125°C
Peak Reverse Current (Note 1)
IRM
¾
¾
0.015
2
0.2
100
mA
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Test Condition
Tj = 25°C, VR = 100V
Tj = 125°C, VR = 100V
1. Short duration test pulse used to minimize self-heating effect.
DS30141 Rev. 2 - 2
1 of 3
MBRM5100
IF, INSTANTANEOUS FORWARD CURRENT (A)
10,000
Tj = 125°C
1000
Tj = 125°C
10
Tj = 100°C
100
Tj = 100°C
1.0
Tj = 75°C
10
Tj = 25 °C
0.1
1.0
Tj = 25°C
0.1
0.01
0
0.2
0.4
0.6
0
0.8
0.5
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
1000
100
f = 1MHz
Tc = 80 °C
CT, TOTAL CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
NEW PRODUCT
100
80
60
40
20
100
10
0
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Peak forward Surge Current
DS30141 Rev. 2 - 2
2 of 3
20
40
60
80
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs.
Reverse Voltage
MBRM5100
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF, DC FORWARD CURRENT (A)
NEW PRODUCT
7.5
6.0
Note 1
4.5
Note 2
3.0
1.5
Note 3
0
0
25
75
50
100
125
150
3.5
3.0
2.5
2.0
1.5
0.5
0
0
7
4
1
2
5
3
6
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
1. TA = TSOLDERING POINT, RqJS = 2.7°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
100-140°C/W.
Ordering Information
Notes:
Note 3
1.0
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Notes:
Note 2
(Note 4)
Device
Packaging
Shipping
MBRM5100-13
POWERMITEâ3
5000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRM5100
YYWW
MBRM5100 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
POWERMITE is a registered trademark of Microsemi Corporation.
DS30141 Rev. 2 - 2
3 of 3
MBRM5100