ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC-DC Converters • Power Management functions • Disconnect switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP10A13FTA 7” 8mm 3000 units ZXMP10A13FTC 13” 8mm 10000units DEVICE MARKING • 7P1 ISSUE 1 - MARCH 2005 1 SEMICONDUCTORS ZXMP10A13F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Drain-Source Voltage V DSS -100 Gate-Source Voltage V GS ±20 V Continuous Drain Current @ VGS=10V; TA=25°C (b) @V GS=10V; TA=70°C (b) ID -0.7 A -0.5 A -0.6 A @ V GS=10V; TA=25°C (a) (c) I DM -3.1 A Continuous Source Current (Body Diode) (b) IS -1.1 A Pulsed Source Current (Body Diode) (c) I SM -3.1 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 625 mW 5 mW/°C (b) PD Pulsed Drain Current Power Dissipation at T A =25°C Linear Derating Factor T j , T stg Operating and Storage Temperature Range 806 mW 6.4 mW/°C -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL (a) R ⍜JA 200 °C/W Junction to Ambient (b) R ⍜JA 155 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. ISSUE 1 - MARCH 2005 SEMICONDUCTORS 2 ZXMP10A13F CHARACTERISTICS ISSUE 1 - MARCH 2005 3 SEMICONDUCTORS ZXMP10A13F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. -100 TYP. MAX. UNIT CONDITIONS STATIC V I D = -250A, V GS =0V Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS -1.0 A V DS = -100V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V I D = -250A, V DS =V GS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State R DS(on) -2.0 g fs V 1 ⍀ 1.45 ⍀ V GS = -10V, I D = -0.6A V GS = -6V, I D = -0.5A 1.2 S V DS = -15V, I D = -0.6A (1) Resistance Forward Transconductance (1)(3) -4.0 DYNAMIC (3) Input Capacitance C iss 141 pF Output Capacitance C oss 13.1 pF C rss 10.8 pF Reverse Transfer Capacitance V DS = -50V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.6 ns Rise Time tr 2.1 ns Turn-Off Delay Time t d(off) 5.9 ns Fall Time tf 3.3 ns Gate Charge Qg 1.8 nC Total Gate Charge Qg 3.5 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 1.6 nC V SD -0.85 V DD = -50V, I D = -1A R G ≅ 6.0⍀, V GS = -10V V DS = -50V, V GS = -5V I D = -0.6A V DS = -50V, V GS = -10V I D = -0.6A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T j =25°C, I S = -0.75A, V GS =0V T j =25°C, I S = -0.9A, di/dt=100A/s t rr 29 ns Q rr 31 nC NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300ms; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MARCH 2005 SEMICONDUCTORS 4 ZXMP10A13F TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2005 5 SEMICONDUCTORS ZXMP10A13F TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2005 SEMICONDUCTORS 6 ZXMP10A13F PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETRES DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM ⍜ 10⬚ TYP 10⬚ TYP G 1.90 NOM 0.075 NOM © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MARCH 2005 7 SEMICONDUCTORS