DIODES ZXMP10A13FTA

ZXMP10A13F
100V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = - 100V : RDS(on)= 1
; ID = - 0.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP10A13FTA
7”
8mm
3000 units
ZXMP10A13FTC
13”
8mm
10000units
DEVICE MARKING
• 7P1
ISSUE 1 - MARCH 2005
1
SEMICONDUCTORS
ZXMP10A13F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Drain-Source Voltage
V DSS
-100
Gate-Source Voltage
V GS
±20
V
Continuous Drain Current @ VGS=10V; TA=25°C (b)
@V GS=10V; TA=70°C (b)
ID
-0.7
A
-0.5
A
-0.6
A
@ V GS=10V; TA=25°C (a)
(c)
I DM
-3.1
A
Continuous Source Current (Body Diode) (b)
IS
-1.1
A
Pulsed Source Current (Body Diode) (c)
I SM
-3.1
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
625
mW
5
mW/°C
(b)
PD
Pulsed Drain Current
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
806
mW
6.4
mW/°C
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ⍜JA
200
°C/W
Junction to Ambient (b)
R ⍜JA
155
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
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SEMICONDUCTORS
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ZXMP10A13F
CHARACTERISTICS
ISSUE 1 - MARCH 2005
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SEMICONDUCTORS
ZXMP10A13F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
-100
TYP.
MAX. UNIT CONDITIONS
STATIC
V
I D = -250␮A, V GS =0V
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
V DS = -100V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
I D = -250␮A, V DS =V GS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
-2.0
g fs
V
1
⍀
1.45
⍀
V GS = -10V, I D = -0.6A
V GS = -6V, I D = -0.5A
1.2
S
V DS = -15V, I D = -0.6A
(1)
Resistance
Forward Transconductance (1)(3)
-4.0
DYNAMIC (3)
Input Capacitance
C iss
141
pF
Output Capacitance
C oss
13.1
pF
C rss
10.8
pF
Reverse Transfer Capacitance
V DS = -50V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.6
ns
Rise Time
tr
2.1
ns
Turn-Off Delay Time
t d(off)
5.9
ns
Fall Time
tf
3.3
ns
Gate Charge
Qg
1.8
nC
Total Gate Charge
Qg
3.5
nC
Gate-Source Charge
Q gs
0.6
nC
Gate-Drain Charge
Q gd
1.6
nC
V SD
-0.85
V DD = -50V, I D = -1A
R G ≅ 6.0⍀, V GS = -10V
V DS = -50V, V GS = -5V
I D = -0.6A
V DS = -50V, V GS = -10V
I D = -0.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T j =25°C, I S = -0.75A,
V GS =0V
T j =25°C, I S = -0.9A,
di/dt=100A/␮s
t rr
29
ns
Q rr
31
nC
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMP10A13F
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXMP10A13F
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ZXMP10A13F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
MILLIMETRES
DIM
INCHES
MIN
MAX
MIN
MAX
H
0.33
0.51
0.013
0.020
K
0.01
0.10
0.0004
0.004
C
ᎏ
1.10
ᎏ
0.043
L
2.10
2.50
0.083
0.0985
D
0.37
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
⍜
10⬚ TYP
10⬚ TYP
G
1.90 NOM
0.075 NOM
© Zetex Semiconductors plc 2005
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MARCH 2005
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SEMICONDUCTORS