ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A02N8TA 7” 12mm 500 units ZXMN2A02N8TC 13” 12mm 2500 units DEVICE MARKING • ZXMN 2A02 Top View ISSUE 5 - JANUARY 2005 1 SEMICONDUCTORS ZXMN2A02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =-10V; T A =25°C (b) V GS =-10V; T A =70°C (b) V GS =-10V; T A =25°C (a) ID Pulsed Drain Current (c) LIMIT UNIT 20 V 12 V 10.2 8.2 8.3 A I DM 50 A IS 4.3 A I SM 50 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.56 12.5 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 2.5 20 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) (b) THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 80 °C/W Junction to Ambient (b) R θJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. ISSUE 5 - JANUARY 2005 SEMICONDUCTORS 2 ZXMN2A02N8 CHARACTERISTICS ISSUE 5 - JANUARY 2005 3 SEMICONDUCTORS ZXMN2A02N8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V (BR)DSS 20 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V I D =250µA, V GS =0V V DS =20V, V GS =0V Zero Gate Voltage Drain Current I DSS 1 A Gate-Body Leakage I GSS 100 nA V GS =⫾12V, V DS =0V Gate-Source Threshold Voltage V GS(th) V Static Drain-Source On-State R DS(on) ⍀ I =250A, V DS = V GS D V GS =4.5V, I D =11A ⍀ V GS =2.5V, I D =8.4A V DS =10V,I D =11A 0.7 0.02 0.04 Resistance (1) (1)(3) g fs 27 S Input Capacitance C iss 1900 pF Output Capacitance C oss 356 pF Reverse Transfer Capacitance C rss 218 pF Turn-On Delay Time t d(on) 7.9 ns Rise Time tr 10 ns ns Forward Transconductance DYNAMIC (3) SWITCHING V DS =10V, V GS =0V, f=1MHz (2) (3) Turn-Off Delay Time t d(off) 33.3 Fall Time tf 13.6 ns Total Gate Charge Qg 18.9 nC Gate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 4.9 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =10V, I D =1A R G ≅6.0Ω, V GS =4.5V V DS =10V,V GS =4.5V, I D =11A SOURCE-DRAIN DIODE V T J =25°C, I S =11.5A, V GS =0V 16.3 ns T J =25°C, I F =2.1A, 7.8 nC 0.95 di/dt= 100A/µs NOTES (1) Measured under pulsed conditions. Width ⱕ300µs. Duty cycle ⱕ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - JANUARY 2005 SEMICONDUCTORS 4 ZXMN2A02N8 CHARACTERISTICS ISSUE 5 - JANUARY 2005 5 SEMICONDUCTORS ZXMN2A02N8 CHARACTERISTICS ISSUE 5 - JANUARY 2005 SEMICONDUCTORS 6 ZXMN2A02N8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES ⍜ MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 L H D E MILLIMETRES DIM Pin 1 A c e 0.050 BSC 1.27 BSC b e A1 Seating Plane CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - JANUARY 2005 7 SEMICONDUCTORS