SPICE MODEL: MMBTA42 MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBTA92) Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • • A SOT-23 C B B E TOP VIEW Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0° 8° C E D G H K Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K3M Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings M J L All Dimensions in mm @TA = 25°C unless otherwise specified Characteristic Symbol VCBO Value 300 Unit V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6.0 V IC 500 mA Pd 300 mW RθJA Tj, TSTG 417 °C/W -55 to +150 °C Collector-Base Voltage Collector Current (Note 1) (Note 3) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Symbol Min Max Unit Test Condition V(BR)CBO 300 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 V IE = 100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 200V, IE = 0 Collector Cutoff Current ON CHARACTERISTICS (Note 2) IEBO ⎯ 100 nA VCE = 6.0V, IC = 0 DC Current Gain hFE 25 40 40 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.5 V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 20mA, IB = 2.0mA Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance VBE(SAT) ⎯ 0.9 V IC = 20mA, IB = 2.0mA Ccb ⎯ 3.0 pF VCB = 20V, f = 1.0MHz, IE = 0 fT 50 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz Current Gain-Bandwidth Product Notes: B B B 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power dissipation rating (Pd) and power derating curve (figure 1). 4. No purposefully added lead. DS30062 Rev. 10 - 2 1 of 3 www.diodes.com MMBTA42 © Diodes Incorporated 400 2.0 Note 1 IC IB = 10 1.8 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 1.6 TA = 150°C 1.4 1.2 1.0 TA = 25°C 0.8 0.6 0.4 TA = -50°C 0.2 0 0 0 25 50 75 100 125 150 175 1 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 10,000 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 TA = 150°C 100 TA = 25°C 10 1 10 1 1000 100 1.0 VCE = 5V TA = -50°C 10 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 100 VCE = 5V 0.9 0.8 TA = -50°C 0.7 0.6 TA = 25°C 0.5 0.4 0.3 TA = 150°C 0.2 0.1 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 5V 10 1 10 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30062 Rev. 10 - 2 2 of 3 www.diodes.com MMBTA42 © Diodes Incorporated Ordering Information (Note 5) Packaging SOT-23 Device MMBTA 42-7-F Notes: 5. Shipping 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 Code J YM K3M K3M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 2000 2001 2002 2003 2004 K L M N P R 2005 S 2006 T 2007 U Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 Aug 8 2008 V 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30062 Rev. 10 - 2 3 of 3 www.diodes.com MMBTA42 © Diodes Incorporated