SPICE MODEL: MMBT2907A MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) • • • • • • • C B B Mechanical Data • • SOT-23 A TOP VIEW E Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0° 8° D E G Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 4): K2F Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) H K J M L C E B Maximum Ratings C Dim All Dimensions in mm @TA = 25°C unless otherwise specified Characteristic Symbol VCBO Collector-Base Voltage Value -60 Unit V V Collector-Emitter Voltage VCEO -60 Emitter-Base Voltage VEBO -5.0 V IC -600 mA Peak Collector Current ICM -800 mA Power Dissipation (Note 1) Pd 300 mW RθJA 417 °C/W Tj, TSTG -55 to +150 °C Collector Current - Continuous (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30040 Rev. 11 - 2 1 of 4 www.diodes.com MMBT2907A © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Symbol Min Max Unit Test Condition V(BR)CBO -60 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICBO ⎯ -10 nA μA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V VCE(SAT) ⎯ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA ⎯ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(SAT) B B B B B SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo pF VCB = -10V, f = 1.0MHz, IE = 0 Cibo ⎯ — 8.0 Input Capacitance 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 200 ⎯ MHz SWITCHING CHARACTERISTICS Turn-On Time toff ⎯ 45 ns Delay Time td ⎯ 10 ns Rise Time tr ⎯ 40 ns Turn-Off Time toff ⎯ 100 ns Storage Time ts ⎯ 80 ns Fall Time tf ⎯ 30 ns Notes: VCE = -20V, IC = -50mA, f = 100MHz VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 3. Short duration pulse test used to minimize self-heating effect. 400 Note 1 f = 1MHz 300 250 CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 200 150 100 Cibo Cobo 50 0 0 25 50 75 100 125 150 175 200 VR, REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30040 Rev. 11 - 2 2 of 4 www.diodes.com MMBT2907A © Diodes Incorporated -1.4 IC = -300mA IC = -10mA IC = -100mA -1.2 IC = -1mA IC = -30mA -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 -0.01 -0.1 -1 -10 IB, BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region -0.5 -0.4 -0.3 TA = 150°C TA = 25°C -0.2 -0.1 TA = -50°C 0 -100 -1 -10 -1000 -100 IC, COLLECTOR CURRENT (mA) Fig. 4, Collector-Emitter Saturation Voltage vs. Collector Current 1000 -1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V TA = 150°C hFE, DC CURRENT GAIN IC = 10 IB -1.6 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) -0.6 100 TA = 25°C TA = -50°C 10 VCE = -5V -0.9 TA = -50°C -0.8 -0.7 -0.6 TA = 25°C -0.5 -0.4 TA = 150°C -0.3 -0.2 1 -1 -10 -100 -0.1 -1000 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base-Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = -5V 100 10 1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current DS30040 Rev. 11 - 2 3 of 4 www.diodes.com MMBT2907A © Diodes Incorporated Ordering Information (Note 4) Packaging SOT-23 Device MMBT2907A-7-F Notes: Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 Code J YM K2F K2F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 2000 2001 2002 2003 2004 K L M N P R 2005 S 2006 T 2007 U Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 Aug 8 2008 V 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30040 Rev. 11 - 2 4 of 4 www.diodes.com MMBT2907A © Diodes Incorporated