SPICE MODEL: MMDT5551 MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction B1 C2 Ideal for Medium Power Amplification and Switching B C Lead Free/RoHS Compliant (Note 3) B2 · · · · C1 G H Mechanical Data · · · E1 Ultra-Small Surface Mount Package E2 · · SOT-363 A Complementary PNP Type Available (MMDT5401) K M Case: SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 Moisture Sensitivity: Level 1 per J-STD-020C L 0.25 0.40 Terminals: Solderable per MIL-STD-202, Method 208 M 0.10 0.25 a 0° 8° Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J D Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). C2 B1 F L E1 All Dimensions in mm Terminal Connections: See Diagram Marking (See Page 2): K4N E2 Ordering & Date Code Information: See Page 2 B2 C1 Weight: 0.006 grams (approx.) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30172 Rev. 7 - 2 1 of 4 www.diodes.com MMDT5551 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 180 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 160 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA mA VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ¾ 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 ¾ 250 ¾ ¾ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Cobo ¾ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 50 250 ¾ Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 8.0 dB OFF CHARACTERISTICS (Note 4) IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Ordering Information Notes: VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz (Note 5) Device Packaging Shipping MMDT5551-7-F SOT-363 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K4N K4N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K4N Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30172 Rev. 7 - 2 2 of 4 www.diodes.com MMDT5551 0.15 200 IC = 10 IB VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 0.14 150 100 50 0.13 0.12 TA = 150°C 0.11 0.10 0.09 0.08 TA = 25°C 0.07 0.06 0.05 TA = -50°C 0.04 0 0 25 50 75 100 125 150 175 200 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1.0 1000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150°C hFE, DC CURRENT GAIN (NORMALIZED) 10 100 TA = 25°C TA = -50°C 10 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 1 10 1 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current DS30172 Rev. 7 - 2 3 of 4 www.diodes.com MMDT5551 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30172 Rev. 7 - 2 4 of 4 www.diodes.com MMDT5551