BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · Epitaxial Die Construction Complementary NPN Types Available (BC847AT, BT, CT) Ultra-Small Surface Mount Package SOT-523 A C Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approx.) Marking Codes (See Table Below & Diagrams on Page 2) Ordering & Date Code Information: See Page 2 Type E B G H K M J D L a Min Max Typ 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm Marking BC857AT 3V BC857BT 3W BC857CT 3G Maximum Ratings B C TOP VIEW Dim A @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf. DS30275 Rev. 2 - 2 1 of 2 BC857AT, BT, CT NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 2) Characteristic V(BR)CBO -50 — — V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO -5 — — V IE = 1mA, IC = 0 hFE 125 220 420 — 290 520 250 475 800 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — — — -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — — -700 -900 — — mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 2) VBE(ON) -600 — — — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA ICBO — — — — -15 -4.0 NA µA VCB = -30V VCB = -30V, TA = 150°C fT 100 — — MHz Output Capacitance COB — — 4.5 pF Noise Figure NF — — 10 dB DC Current Gain (Note 2) Current Gain A B C Collector-Cutoff Current (Note 2) Gain Bandwidth Product Ordering Information Notes: Test Condition VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KW, f = 1.0KHz, BW = 200Hz (Note 3) Device Packaging Shipping BC857AT-7 SOT-523 3000/Tape & Reel BC857BT-7 SOT-523 3000/Tape & Reel BC857CT-7 SOT-523 3000/Tape & Reel 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details: go to ourwebsite at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) XXYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30275 Rev. 2 - 2 2 of 2 BC857AT, BT, CT