BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · Epitaxial Die Construction Complementary PNP Type Available (BC857AT,BT,CT) Ultra-Small Surface Mount Package SOT-523 C TOP VIEW Mechanical Data · · · · Case: SOT-523, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approx.) B A G H Marking 1E BC847B 1F BC847C 1M Maximum Ratings M N J Type C E K BC847A B D Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 All Dimensions in mm L @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Ordering Information (Note 2) Notes: Device Packaging Shipping BC847AT-7 SOT-523 3000/Tape & Reel BC847BT-7 SOT-523 3000/Tape & Reel BC847CT-7 SOT-523 3000/Tape & Reel 1. Device mounted on FR-4 PC board with recommended pad layout. 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30274 Rev. A-2 1 of 3 BC847AT, BT, CT NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic DC Current Gain Symbol Min Typ Max Unit — — — 110 200 420 — 150 270 — 290 520 — — — 220 450 800 — Test Condition (Note 3) Current Gain A B C Current Gain A B C hFE VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — — 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Emitter Cutoff Current (Note 3) ICBO ICBO — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C fT 100 — — MHz COBO — — 4.5 pF NF — — 10 4.0 dB Gain Bandwidth Product Output Capacitance Noise Figure Notes: BC847BT BC847CT VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, RS = 2.0kW, f = 1.0kHz, BW = 200Hz 3. Short duration test pulse used to minimize self-heating effect. DS30274 Rev. A-2 2 of 3 BC847AT, BT, CT 1000 250 VCE = 5V 200 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) 100 C 150 100 TA = 25 C 100 -50 C 10 50 1 0 0 100 0.01 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) IC / IB = 20 0.4 0.3 0.2 TA = 100 C 0.1 25 C -50 C 1.0 10 10 100 TA = 25 C VCE = 10V 5V 2V 100 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current Notes: 1.0 10 0 0.1 0.1 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 0.5 VCE, COLLECTOR SATURATION VOLTAGE (V) NEW PRODUCT (see Note 1) 1. Device mounted on FR-4 PC board with recommended pad layout. DS30274 Rev. A-2 3 of 3 BC847AT, BT, CT