BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available (BC817) SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 G H 2.80 3.00 H J 0.013 0.10 K 0.903 1.10 A C Mechanical Data B Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking (See Page 3): BC807-16 5A, K5A BC807-25 5B, K5B BC807-40 5C,K5C Ordering & Date Code Information: See Page 3 Approx. Weight: 0.008 grams B TOP VIEW C E D E K M J L D L 0.45 0.61 M 0.85 0.80 a 0 8 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Collector-Emitter Voltage Characteristic VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -500 mA Peak Collector Current ICM -1000 mA Peak Emitter Current IEM -1000 mA Power Dissipation at TSB = 50°C (Note 1) Pd 310 mW RJSB 320 °C/W RJA 403 °C/W Tj, TSTG -65 to +150 °C Collector Current Thermal Resistance, Junction to Substrate Backside (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic (Note 2) DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 Collector-Emitter Saturation Voltage Base-Emitter Voltage Symbol Min Typ Max hFE 100 160 250 60 100 170 — 250 400 600 — — — — VCE = 1.0V, IC = 300mA VCE(SAT) — — -0.7 V IC = 500mA, IB = 50mA VBE — — -1.2 V VCE = 1.0V, IC = 300mA nA µA VCE = 45V VCE = 25V, Tj = 150°C nA Collector-Emitter Cutoff Current ICES — — -100 -5.0 Emitter-Base Cutoff Current IEBO — — -100 Gain Bandwidth Product Collector-Base Capacitance Notes: Unit Unit Test Condition VCE = 1.0V, IC = 100mA fT 100 — — MHz CCBO — — 12 pF VEB = 4.0V VCE = 5.0V, IC = 10mA, f = 50MHz VCB = 10V, f = 1.0MHz 1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area. 2. Short duration pulse test used to minimize self-heating effect. DS11208 Rev. 9 - 2 1 of 3 BC807-16/-25/-40 400 1000 TA = 25°C f = 20MHz fT, GAIN BANDWIDTH PRODUCT (MHz) Pd, POWER DISSIPATION (mW) See Note 1 300 200 100 -VCE = 5.0V 1.0V 100 10 0 0 100 1 200 TSB, SUBSTRATE TEMPERATURE (°C) Fig. 1, Power Derating Curve 1000 typical limits at TA = 25°C 1000 -VCE = 1V 150°C 0.4 -IC / -IB = 10 hFE, DC CURRENT GAIN -VCESAT, COLLECTOR SATURATION VOLTAGE (V) 100 -IC, COLLECTOR CURRENT (mA) Fig. 2, Gain-Bandwidth Product vs Collector Current 0.5 0.3 0.2 25°C 25°C -50°C 100 150°C 0.1 -50°C 10 0 0.1 1 10 0.1 1000 100 -IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current 3.2 2.4 400 2 1.8 1.6 1.4 1.2 0.8 200 0.6 0.4 100 10 100 1000 100 2.8 300 1 -IC, COLLECTOR CURRENT (mA) Fig. 4, DC Current Gain vs Collector Current -IC, COLLECTOR CURRENT (mA) 500 -IC, COLLECTOR CURRENT (mA) 10 0.35 80 0.3 0.25 60 0.2 40 0.15 0.1 20 -IB = 0.05mA -IB = 0.2mA 0 0 0 1 0 2 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics DS11208 Rev. 9 - 2 10 20 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6, Typical Emitter-Collector Characteristics 2 of 3 BC807-16/-25/-40 Ordering Information Notes: Device* Packaging Shipping BC807-xx-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *xx = gain group, eg. BC807-16-7. Marking Information YM XXX = Product Type Marking Code (See Page 1):e.g. K5A = BC807-16 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September XXX Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS11208 Rev. 9 - 2 3 of 3 BC807-16/-25/-40