DIODES MBR745

MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AC
L
B
M
C
D
K
A
Pin 1
Pin 2
E
Mechanical Data
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J
G
N
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
R
P
Pin 1 +
Pin 2 -
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
J
0.51
1.14
K
3.53Æ
4.09Æ
L
3.56
4.83
M
1.14
1.40
0.64
N
0.30
+
P
2.03
2.92
Case
R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
Symbol
MBR
730
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
7.5
A
IFSM
150
A
@ IF = 7.5A, TC = 25°C
@IF = 7.5A, TC = 125°C
VFM
0.55
0.70
0.70
0.75
V
@TC = 25°C
@ TC = 125°C
IRM
1.0
15
1.0
50
mA
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Cj
400
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJc
3.5
°C/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/ms
Tj, TSTG
-65 to +150
°C
Operating and Storage Temperature Range
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS23007 Rev. 7 - 2
1 of 2
MBR730-MBR760
50
IF, INSTANTANEOUS FWD CURRENT (A)
I(AV), AVERAGE FWD CURRENT (A)
10
8
6
4
2
0
MBR730 - MBR745
10
MBR750 - MBR760
1.0
TJ = 25°C
Pulse width = 300µs
2% duty cycle
0.1
0
50
100
0.2
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
0.6
0.8
1.0
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ Instantaneous Fwd Characteristics
4000
8.3 ms Single half
sine-wave (JEDEC method)
150
Cj, CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
175
0.4
125
100
75
1000
50
25
100
1
10
0.1
100
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
10
Tj = 125°C
1.0
Tj = 75°C
0.1
Tj = 25°C
0.01
Resistive or
Inductive load
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23007 Rev. 7 - 2
2 of 2
MBR730-MBR760