KBP2005G - KBP210G 2.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 65A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized Component Index, File Number E94661 KBP · · · · _ M B N Max 14.25 14.75 B 10.20 10.60 P E 2.29 Typical D 14.25 14.73 E 3.56 4.06 G 0.76 0.86 H 1.17 1.42 J D G Min A C C H Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Marked on Body Approx. Weight: 1.52 grams Mounting Position: Any Marking: Type Number L K + Mechanical Data · · A J Dim 2.8 X 45° Chamfer K 0.80 1.10 L 3.35 3.65 M 3° Nominal N 2° Nominal P 0.30 0.64 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. KBP Symbol 2005G Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 105°C Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element @ IF = 2.0A Peak Reverse Current at Rated DC Blocking Voltage @ TC = 25°C @ TC = 125°C Typical Junction Capacitance per Element (Note 2) Typical Thermal Resistance (Note 1) Operating and Storage Temperature Range Notes: KBP 201G KBP 202G KBP 204G KBP 206G KBP 208G KBP 210G Unit V VRRM VRWM VR 50 100 200 400 600 800 1000 VR(RMS) 35 70 140 280 420 560 700 V IO 2.0 A IFSM 65 A VFM 1.1 V IRM 5.0 500 µA Cj 25 pF RqJC 14 °C/W Tj, TSTG -65 to +150 °C 1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. DS21205 Rev. F-2 1 of 2 KBP2005G-KBP210G 1.5 Lead Case 1.0 Ambient 0.5 0 10 IF, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 2.0 TJ = 150°C TJ = 25°C 1.0 0.1 Pulse Width = 300 µs 0 0 50 100 0 150 100 0.6 0.8 100 Tj = 150°c Single Half Sine Wave (JEDEC Method) 80 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.4 1.0 1.2 1.4 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics T, TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 60 40 20 0 0.2 Tj = 25°C f = 1MHz 10 1 1 10 1 100 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 10 10,000 1000 Tj = 150°C 100 Tj = 125°C Tj = 100°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21205 Rev. F-2 2 of 2 KBP2005G-KBP210G