DIODES DF005S

DF005S - DF10S
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER
Features
Glass Passivated Die Construction
Diffused Junction
Low Forward Voltage Drop, High Current
Capability
Surge Overload Rating to 50A Peak
Designed for Surface Mount Application
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component Index,
File Number E94661
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Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
0.22
0.30
D
0.076
0.33
E
—
10.40
D E
H
Case: Molded Plastic
Terminals: Solder Plated Leads, Solderable
per MIL-STD-202, Method 208
Polarity: As marked on Case
Approx. Weight: 0.38 grams
Mounting Position: Any
Marking: Type Number
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G
A B
Mechanical Data
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DF-S
L
C
J
K
G
1.02
1.53
H
8.13
8.51
J
2.40
2.60
K
5.00
5.20
L
1.00
1.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Current
@ TA = 40°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage (per element)
@ IF = 1.0A
Peak Reverse Current at Rated
DC Blocking Voltage (per element)
I2t
@ TA = 25°C
@ TA = 125°C
Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (per element) (Note 1)
Typical Thermal Resistance, Junction to Ambient
(Note 2)
Operating and Storage Temperature Range
Notes:
Symbol
DF
005S
DF
01S
DF
02S
DF
04S
DF
06S
DF
08S
DF
10S
Unit
VRMM
VRWM
VR
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
IO
1.0
A
IFSM
50
A
VFM
1.1
V
IRM
10
500
µA
I2t
10.4
A2s
Cj
25
pF
RqJA
40
°C/W
Tj, TSTG
-65 to +150
°C
1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm2 (0.03mm thick) land areas.
DS17001 Rev. H-2
1 of 2
DF005S-DF10S
60 Hz Resistive or
Inductive load
0.5
0
40
60
100
80
120
10
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
1.0
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.1
0.01
140
0.4
1.0
1.4
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
60
100
Tj = 25°c
f = 1.0 Mhz
Vsig = 50 mV p-p
Single half-sine-Wave
(JEDEC Method)
50
CJ, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.8
0.6
40
30
20
10
10
0
1
1
10
100
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DS17001 Rev. H-2
2 of 2
DF005S-DF10S