KSC5030F KSC5030F High Voltage and High Reliability • High Speed Switching • Wide SOA TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG Value 1100 Units V 800 V 7 V 6 A 20 A 3 A 60 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector Cut-off Current Test Condition IC = 1mA, IE = 0, VBE=0 Min. 1100 BVCEO Collector Cut-off Current IC = 5mA, RBE =∞ BVEBO Emitter Cut-off Current IE = 1mA, IC = 0 VCEX (sus) DC Current Gain IC = 3A, IB1 = -IB2 = 0.6A L = 1mH, Clamped Typ. Max. 800 Units V V 7 V 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE= 5V, IC = 0.4A VCE = 5V, IC = 2A 10 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 2 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V Cob Output Capacitance VCE = 10V, IE = 0, f = 1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.4A VCC = 400V IC = 5IB1 = -2.5IB2 = 4A RL = 100Ω tON Turn On Time tSTG Storage Time tF Fall Time 120 pF 15 MHz 0.5 µs 3 µs 0.3 µs hFE Classification Classification R O Y hFE1 10 ~ 20 15 ~ 30 20 ~ 40 ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5030F Typical Characteristics 1000 10 VCE = 5V 8 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 9 7 6 IB = 800mA IB = 700mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 20mA I = 0 B 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 100 10 1 0.01 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC = 5 IB VCE = 5V 9 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain 10 0.1 VBE(sat) VCE(sat) 8 7 6 5 4 3 2 1 0.01 0.01 0.1 1 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10 tSTG IC[A], COLLECTOR CURRENT s tF 0.1 IC(max) 0µ 10 tON s 1m 1 IC(max).(Pulse) 10 ms 10 tON, tSTG, tF [µs], TIME 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 1 DC 1 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2002 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B1, December 2002 KSC5030F Typical Characteristics (Continued) 80 100 70 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT L=200uH IB2 = -0.6A 10 1 0.1 60 50 40 30 20 10 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Reverse Bias Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 2. Power Derating Rev. B1, December 2002 KSC5030F Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1